SI8821EDB-T2-E1

Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) Max. ID (A) a, e 0.135 at VGS = -4.5 V -2.3 0.150 at VGS = -3.7 V -2.1 0.215 at VGS = -2.5 V -1.8 MICRO FOOT® 0.8 x 0.8 S 3 xxx xx 5.2 nC • TrenchFET® power MOSFET • Small 0.8 mm x 0.8 mm outline area • Low 0.4 mm max. profile • Typical ESD protection 1400 V HBM • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S 2 APPLICATIONS S • Load switches and chargers switches • Battery management, power management 8 0. m m 1 Qg (Typ.) mm 0.8 Backside View 1 G G • DC/DC converters 4 D Bump Side View • For smart phones, tablet PCs, and mobile computing D Marking Code: xx = AL xxx = Date/Lot traceability code Ordering Information: Si8821EDB-T2-E1 (lead (Pb)-free and halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ± 12 TA = 70 °C TA = 25 °C ID Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C IS TA = 70 °C TA = 25 °C PD Package Reflow Conditions c A -15 -0.7 a -0.4 b 0.6 a 0.5 b W 0.3 b TA = 70 °C Operating Junction and Storage Temperature Range -1.6 b 0.9 a TA = 25 °C Maximum Power Dissipation -1.8 a -1.3 b TA = 70 °C Pulsed Drain Current (t = 300 μs) V -2.3 a TA = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg -55 to 150 VPR 260 IR/Convection 260 °C Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s. b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s. c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TA = 25 °C. S15-0509-Rev. D, 16-Mar-15 Document Number: 63268 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8821EDB www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol a, b t=5s Maximum Junction-to-Ambient c, d t=5s Maximum Junction-to-Ambient RthJA Typical Maximum 105 135 200 260 Unit °C/W Notes a. Surface mounted on 1" x 1" FR4 board with full copper. b. Maximum under steady state conditions is 185 °C/W. c. Surface mounted on 1" x 1" FR4 board with minimum copper. d. Maximum under steady state conditions is 330 °C/W. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VDS VGS = 0 V, ID = -250 μA -30 - - V - -21 - - 0.5 - -0.6 - -1.3 Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) - - ± 0.1 VDS = 0 V, VGS = ± 12 V - - ±5 VDS = -30 V, VGS = 0 V - - -1 VDS = -30 V, VGS = 0 V, TJ = 70 °C - - -10 ID(on) VDS ≤ -5 V, VGS = -4.5 V -5 - - VGS = -4.5 V, ID = -1 A - 0.105 0.135 RDS(on) VGS = -3.7 V, ID = -1 A - 0.115 0.150 VGS = -2.5 V, ID = -0.5 A - 0.150 0.215 VDS = -5 V, ID = -1 A - 4.8 - - 440 - - 50 - - 40 - IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a Forward Transconductance a VDS = VGS, ID = -250 μA VDS = 0 V, VGS = ± 4.5 V Gate-Source Leakage Drain-Source On-State Resistance a ID = -250 μA gfs mV/°C V μA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time S15-0509-Rev. D, 16-Mar-15 VDS = -15 V, VGS = 0 V, f = 1 MHz VDS = -15 V, VGS = -10 V, ID = -1 A - 11 17 - 5.2 8 VDS = -15 V, VGS = -4.5 V, ID = -1 A - 0.9 - - 1.6 - VGS = -0.1 V, f = 1 MHz - 15 - - 25 50 td(on) tr - 20 40 - 40 80 tf - 15 30 td(on) - 5 10 - 10 20 - 50 100 - 15 30 td(off) tr td(off) tf VDD = -15 V, RL = 15 Ω ID ≅ -1 A, VGEN = -4.5 V, Rg = 1 Ω VDD = -15 V, RL = 15 Ω ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω pF nC Ω ns Document Number: 63268 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8821EDB www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit TA = 25 °C - - -0.7 - - -15 - -0.82 -1.2 V - 11 20 ns - 4 10 nC - 6.5 - - 4.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IS = -1 A, VGS = 0 V IF = -1 A, dI/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-2 2.00 10-3 IGSS - Gate Current (A) IGSS - Gate Current (mA) 1.50 TJ = 25 °C 1.00 0.50 10-4 10-5 TJ = 150 °C 10-6 TJ = 25 °C 10-7 10-8 10-9 0.00 0 3 6 9 12 15 VGS - Gate-Source Voltage (V) Gate Current vs. Gate-Source Voltage S15-0509-Rev. D, 16-Mar-15 18 0 3 6 9 12 15 18 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Document Number: 63268 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8821EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 15 5 VGS = 5 V thru 3.5 V VGS = 3 V 4 ID - Drain Current (A) ID - Drain Current (A) 12 9 VGS = 2.5 V 6 3 3 2 TC = 25 °C 1 VGS = 2 V TC = 125 °C TC = - 55 °C VGS = 1.5 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.400 2.5 700 VGS = 2.5 V 0.300 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 600 0.200 VGS = 3.7 V 0.100 Ciss 500 400 300 200 VGS = 4.5 V 100 0.000 0 0 3 6 9 12 15 0 5 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 30 1.6 VDS = 7.5 V ID = 1 A 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) Coss Crss 6 VDS = 15 V 4 VDS = 24 V 2 0 VGS = 4.5, 3.7 V, ID = 1 A 1.4 VGS = 2.5 V, ID = 0.5 A 1.2 1.0 0.8 0.6 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge S15-0509-Rev. D, 16-Mar-15 12 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 63268 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8821EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.40 10 0.35 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 1 A 0.30 TJ = 150 °C 1 TJ = 25 °C 0.25 TJ = 125 °C 0.20 0.15 TJ = 25 °C 0.10 0.05 0.1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.94 14 0.92 12 10 Power (W) 0.90 VGS(th) (V) 1 0.88 ID = 250 μA 8 6 0.86 4 0.84 0.82 - 50 2 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 0 0.001 150 Threshold Voltage 0.01 0.1 1 Time (s) 10 100 1000 Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 µs 1 1 ms 0.1 10 ms TA = 25 °C BVDSS Limited 0.01 0.1 100 ms 10 s, 1s DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S15-0509-Rev. D, 16-Mar-15 Document Number: 63268 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8821EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.5 0.8 Power Dissipation (W) ID - Drain Current (A) 2.0 1.5 1.0 0.6 0.4 0.2 0.5 0.0 0.0 0 25 50 75 100 125 TA - Ambient Temperature (°C) Current Derating* 150 25 50 75 100 125 T A - Ambient Temperature (°C) 150 Power Derating Note When mounted on 1" x 1" FR4 with full copper. * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S15-0509-Rev. D, 16-Mar-15 Document Number: 63268 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8821EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 185 °C/W 3. T JM - T A = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Maximum Copper) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 330 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Minimum Copper) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63268. S15-0509-Rev. D, 16-Mar-15 Document Number: 63268 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix MICRO FOOT®: 4-Bump (0.8 mm x 0.8 mm, 0.4 mm Pitch) D S e S e XXX S D S S 4x Ø b G D S AK Mark on Backside of die A2 4-Ø 0.205 to 0.225 Note 5 Solder Mask ~Ø 0.215 A1 A e b k b1 e Bump Note 2 Note 4 Notes (1) Laser mark on the backside surface of die (2) Bumps are 95.5 % Sn,3.8 % Ag,0.7 % Cu (3) “i” is the location of pin 1 (4) “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined. (5) Non-solder mask defined copper landing pad. DIM. MILLIMETERS a INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.328 0.365 0.402 0.0129 0.0144 0.0158 A1 0.136 0.160 0.184 0.0053 0.0062 0.0072 A2 0.192 0.205 0.218 0.0076 0.0081 0.0086 b 0.200 0.220 0.240 0.0078 0.0086 0.0094 b1 0.175 0.0068 e 0.400 0.0157 S 0.160 0.180 0.200 0.0062 0.0070 0.0078 D 0.720 0.760 0.800 0.0283 0.0299 0.0314 K 0.040 0.070 0.100 0.0015 0.0027 0.0039 Note a. Use millimeters as the primary measurement. ECN: T15-0053-Rev. A, 16-Feb-15 DWG: 6033 Revision: 16-Feb-15 1 Document Number: 69442 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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