New Product
Si9933CDY
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
• Halogen-free Option Available
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a, e
0.058 at VGS = - 4.5 V
-4
0.094 at VGS = - 2.5 V
-4
VDS (V)
- 20
Qg (Typ.)
RoHS
COMPLIANT
8
APPLICATIONS
• Load Switch
• DC/DC Converter
S1
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
S2
G1
G2
Top View
Ordering Information: Si9933CDY-T1-E3 (Lead (Pb)-free)
Si9933CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
D2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
- 20
± 12
- 4e
- 4e
ID
IDM
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
V
- 4b, c, e
- 3.8b, c
- 20
- 2.5
A
- 1.7b, c
-6
1.8
3.1
2
mJ
2b, c
1.28b, c
- 50 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
W
°C
THERMAL RESISTANCE RATINGS
Limit
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
52
32
Maximum
62.5
40
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package Limited.
Document Number: 68791
S-81729-Rev. A, 04-Aug-08
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1
New Product
Si9933CDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistanceb
RDS(on)
Forward Transconductanceb
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
gfs
mV/°C
3.1
- 0.6
- 1.4
V
- 100
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
VDS = ≤ - 5 V, VGS = - 10 V
VGS = - 4.5 V, ID = - 4.8 A
- 20
0.058
VGS = - 2.5 V, ID = - 1 A
0.075
0.094
VDS = - 10 V, ID = - 4.8 A
11
VDS = - 10 V, VGS = 0 V, f = 1 MHz
140
665
pF
115
VDS = - 10 V, VGS = - 10 V, ID = - 4.8 A
VDS = - 10 V, VGS = - 4.5 V, ID = - 4.8 A
17
26
8
12
2
VDD = - 10 V, RL = 2.6 Ω
ID ≅ - 3.8 A, VGEN = - 10 V, Rg = 1 Ω
1.2
6
12
6
12
23
39
tf
9
18
td(on)
21
32
tr
nC
3
f = 1 MHz
15
td(off)
Ω
S
26
td(off)
µA
A
0.048
td(on)
tr
V
- 19
VDD = - 10 V, RL = 2.6 Ω
ID ≅ - 3.8 A, VGEN = - 4.5 V, Rg = 1 Ω
tf
50
75
29
44
13
20
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
IS
TC = 25 °C
- 2.5
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
- 20
IS = - 3.8 A
IF = - 3.8 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.77
- 1.2
V
30
45
ns
17
26
nC
16
14
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68791
S-81729-Rev. A, 04-Aug-08
New Product
Si9933CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0
20
VGS = 5 thru 3.5 V
VGS = 3 V
2.5
12
I D - Drain Current (A)
I D - Drain Current (A)
16
VGS = 2.5 V
8
2.0
1.5
TC = 25 °C
1.0
VGS = 2 V
4
0.5
TC = 125 °C
VGS = 1.5 V
0
1
2
3
4
TC = - 55 °C
0.0
0.0
0
5
0.5
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.16
1200
0.12
900
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.0
VGS = 2.5 V
0.08
VGS = 4.5 V
0.04
Ciss
600
300
Coss
Crss
0.00
0
0
5
10
15
20
0
12
16
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
20
1.6
1.5
ID = 4.8 A
8
ID = 20 A
1.4
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
8
4
VDS = 10 V
6
VDS = 16 V
4
VGS = - 4.5 V; I D = - 4.8 A
1.3
1.2
1.1
VGS = - 2.5 V; I D = - 3.8 A
1.0
0.9
2
0.8
0
0
3
6
9
12
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68791
S-81729-Rev. A, 04-Aug-08
15
18
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
Si9933CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.08
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = - 4.8 A
10
TJ = 25 °C
TJ = 150 °C
1
0.06
TJ = 125 °C
0.04
TJ = 25 °C
0.02
0
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
12
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.3
50
1.2
40
Power (W)
VGS(th) (V)
1.1
1.0
ID = 250 µA
0.9
30
20
0.8
10
0.7
0.6
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
Time (s)
TJ - Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by RDS(on)*
I D - Drain Current (A)
10
1 ms
1
10 ms
100 ms
1s
10 s
0.1
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 68791
S-81729-Rev. A, 04-Aug-08
New Product
Si9933CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
I D - Drain Current (A)
6
Package Limited
4
2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
4.0
1.5
3.2
1.2
Power (W)
Power (W)
Current Derating*
2.4
1.6
0.8
0.9
0.6
0.3
0.0
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68791
S-81729-Rev. A, 04-Aug-08
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5
New Product
Si9933CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 90 °C/W
3. TJM - TA = PDMZthJA(t)
0.01
10 -4
Single Pulse
10 -3
4. Surface Mounted
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68791.
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6
Document Number: 68791
S-81729-Rev. A, 04-Aug-08
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000