SIA449DJ-T1-GE3

SiA449DJ Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () (Max.) ID (A) 0.020 at VGS = - 10 V - 12a 0.024 at VGS = - 4.5 V - 12a 0.038 at VGS = - 2.5 V a Qg (Typ.) 23.1 nC - 12 PowerPAK SC-70-6L-Single APPLICATIONS • Providing low voltage drop in 1 D 3 G D 5 S D 2.05 mm S Smart Phones, Tablet PCs, Mobile Computing: - Power Management - Charger Switches - Load Switches - DC/DC Converters 2 D 6 • TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 G 2.05 mm S 4 Marking Code BWX Ordering Information: SiA449DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) Part # code D XXX Lot Traceability and Date code P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 12 TC = 70 °C TA = 25 °C - 12a ID - 10.4b, c - 8.3b, c TA = 70 °C IDM Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 70 °C TA = 25 °C - 12a IS - 2.9b, c 19 12 PD W 3.5b, c 2.2b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A - 30 TC = 25 °C Maximum Power Dissipation V - 12a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit - 55 to 150 Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Symbol Typical Maximum t5s RthJA 28 36 Steady State RthJC 5.3 6.5 Unit °C/W Notes: a. Package limited b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. Document Number: 62644 S13-1993-Rev. B, 23-Sep-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA449DJ Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea - 22 ID = - 250 µA VGS(th) Temperature Coefficient gfs mV/°C 3 - 1.5 V VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 VDS - 5 V, VGS = - 10 V RDS(on) V - 0.6 - 10 µA A VGS = - 10 V, ID = - 6 A 0.0155 0.0200 VGS = - 4.5 V, ID = - 5 A 0.0185 0.0240 VGS = - 2.5 V, ID = - 2 A 0.0264 0.0380 VDS = - 15 V, ID = - 6 A 31  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 2140 VDS = - 15 V, VGS = 0 V, f = 1 MHz VDS = - 15 V, VGS = - 10 V, ID = - 10.4 A VDS = - 15 V, VGS = - 4.5 V, ID = - 10.4 A VDD = - 15 V, RL = 1.8  ID  - 8.3 A, VGEN = - 10 V, Rg = 1  tr Turn-Off Delay Time td(off) Fall Time Turn-On Delay Time Rise Time 72 35 2.5 0.6 3.3 6.6 8 16 10 20 39 60 tf 8 16 26 40 28 42 VDD = - 15 V, RL = 1.8  ID  - 8.3 A, VGEN = - 4.5 V, Rg = 1  td(off) Fall Time 48 23.1 td(on) tr Turn-Off Delay Time pF nC 6.2 f = 1 MHz td(on) Rise Time 168 155 tf 44 66 8 16  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 12 - 30 IS = - 8.3 A, VGS = 0 IF = - 8.3 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 19 30 ns 12 20 nC 12 7 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 62644 S13-1993-Rev. B, 23-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA449DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 30 VGS = 10 V thru 3V 0.8 VGS = 2 V 12 0.4 0.2 0 0 0.5 1 1.5 TC = 25 °C 0.6 6 0 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 18 TC = 125 °C TC = - 55 °C 0 2 0.45 0.9 1.35 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.040 3500 0.034 2800 C - Capacitance (pF) ID - Drain Current (A) 24 VGS = 2.5 V 0.028 0.022 VGS = 4.5 V 1.8 Ciss 2100 1400 700 0.016 VGS = 10 V Coss Crss 0 0.010 0 6 12 18 24 0 30 3 6 9 12 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.7 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 10.4 A VDS = 8 V 6 VDS = 9.6 V 4 VDS = 15 V 2 0 1.48 1.26 VGS = 4.5 V, 5 A VGS = 10 V, 6 A 1.04 0.82 0.6 0 10 20 30 Qg - Total Gate Charge (nC) Gate Charge Document Number: 62644 S13-1993-Rev. B, 23-Sep-13 40 50 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA449DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.05 ID = 6 A 0.04 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10.0 TJ = 150 °C 1.0 TJ = 25 °C 0.03 TJ = 125 °C 0.02 TJ = 25 °C 0.01 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 30 1.05 25 0.9 Power (W) VGS(th) (V) 20 ID = 250 μA 0.75 15 10 0.6 5 0.45 - 50 - 25 0 25 50 75 100 125 150 0 0.001 TJ - Temperature (°C) 0.01 0.1 1 Time (s) 10 100 1000 Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms 100 ms 10 s, 1s 0.1 DC TA = 25 °C BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical questions, contact: pmostechsupport@vishay.com Document Number: 62644 S13-1993-Rev. B, 23-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA449DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 28 ID - Drain Current (A) 21 14 7 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 24 2 18 1.5 Power (W) Power (W) Current Derating* 12 6 1 0.5 0 0 0 25 50 75 100 125 150 0 25 50 75 100 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Junction-to-Case Power Junction-to-Ambient 125 150 * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 62644 S13-1993-Rev. B, 23-Sep-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA449DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 10-4 0.05 0.02 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62644. www.vishay.com 6 For technical questions, contact: pmostechsupport@vishay.com Document Number: 62644 S13-1993-Rev. B, 23-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000