SIA469DJ-T1-GE3

SiA469DJ www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK® SC-70-6L Single S 4 D 5 • TrenchFET® Gen III p-channel power MOSFET D 6 • Thermally enhanced PowerPAK® SC-70 package • 100% Rg tested 05 2. S 7 m m 1 m 5m 2.0 Top View 3 G Bottom View 2 D • Material categorization:  for definitions of compliance www.vishay.com/doc?99912 1 D see APPLICATIONS S • Load switch • DC/DC converters PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) a Configuration please • High speed switching -30 0.0265 0.0400 10 -12 Single G • Power management in battery-operated, mobile and wearable devices P-Channel MOSFET D ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SC-70 SiA469DJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -30 Gate-source voltage VGS ± 20 TC = 70 °C TA =25 °C -12 a ID -8.8 b, c -7 b, c TA = 70 °C Pulsed drain current (t = 100 μs) Continuous source-drain diode current IDM TC = 25 °C TA = 70 °C TC = 70 °C TA = 25 °C -12 a IS -2.7 b, c 15.6 10 PD W 3.3 b, c 2.1 b, c TA = 70 °C Operating junction and storage temperature range A -40 TC = 25 °C Maximum power dissipation V -12 a TC = 25 °C Continuous drain current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 Soldering recommendations (peak temperature) d, e °C 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum junction-to-ambient b, f t5s RthJA 30 38 Maximum junction-to-case (drain) Steady state RthJC 6.5 8 UNIT °C/W Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. S16-2441Rev. A, 05-Dec-16 Document Number: 75354 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA469DJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -30 - - - V -25.5 - - 7 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA Gate-source threshold voltage mV/°C VGS(th) VDS = VGS, ID = -250 μA -1 - -3 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = -30 V, VGS = 0 V - - -1 VDS = -30 V, VGS = 0 V, TJ = 55 °C - - -10 VDS  -5 V, VGS = 0 V -10 - - A  VGS = -10 V, ID = -5 A - 0.0210 0.0265 VGS = -4.5 V, ID = -3 A - 0.0300 0.0400 VDS = -10 V, ID = -5 A - 15 - - 1020 - VDS = -15 V, VGS = 0 V, f = 1 MHz - 130 - - 115 - VDS = -15 V, VGS = -10 V, ID = -5 A - 21 32 VDS = -15 V, VGS = -4.5 V, ID = -5 A - 10 15 - 2.3 - μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -15 V, VGS = -4.5 V, ID = -5 A - 3.6 - 1.8 9 18 - 30 60 - 26 50 - 25 50 tf - 14 30 td(on) - 7 15 - 17 35 - 30 30 - 15 30 f = 1 MHz td(on) tr td(off) tr td(off) VDD = -15 V, RL = 3 , ID  -5 A, VGEN = -4.5 V, Rg = 1  VDD = -15 V, RL = 3 , ID  -5 A, VGEN = -10 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD TC = 25 °C IS = -5 A, VGS = 0 V - - -12 - - -40 - -0.85 -1.2 A V Body diode reverse recovery time trr - 18 40 ns Body diode reverse recovery charge Qrr - 10 20 nC Reverse recovery fall time ta - 10 - Reverse recovery rise time tb - 8 - IF = -5 A, dI/dt = 100 A/μs, TJ = 25 °C ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-2441Rev. A, 05-Dec-16 Document Number: 75354 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA469DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 40 10000 40 10000 VGS = 10 V thru 5 V 1000 25 20 15 100 10 VGS = 3 V 30 1000 1st line 2nd line VGS = 4 V 2nd line ID - Drain Current (A) 30 1st line 2nd line 2nd line ID - Drain Current (A) 35 20 5 TC = 125 °C 0 0.5 1 1.5 2 2.5 TC = -55 °C 0 10 0 3 10 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 5 Axis Title 0.05 1500 10000 10000 1200 1000 0.03 0.02 VGS = 10 V 100 0.01 Ciss 1000 900 1st line 2nd line VGS = 4.5 V 2nd line C - Capacitance (pF) 0.04 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 100 TC = 25 °C 10 600 100 300 Coss Crss 0 0 10 5 10 15 20 25 30 35 40 10 0 5 10 20 25 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.6 ID = 5 A VDS = 15 V 1000 4 1st line 2nd line VDS = 24 V VDS = 7.5 V 100 2 0 10 0 4 8 12 16 20 2nd line RDS(on) - On-Resistance (Normalized) 10000 6 30 Axis Title Axis Title 8 2nd line VGS - Gate-to-Source Voltage (V) 15 10000 ID = 5 A VGS = 10 V 1.4 VGS = 4.5 V 1.2 1.0 100 0.8 0.6 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S16-2441Rev. A, 05-Dec-16 1000 1st line 2nd line 0 Document Number: 75354 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA469DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 1000 TJ = 25 °C 1 100 0.1 0.04 0.2 0.4 0.6 0.8 1.0 0.02 100 TJ = 25 °C 0.01 0 1.2 0 2 4 6 8 10 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 1.8 10000 30 10000 1.7 25 1.6 1.3 ID = 250 μA 1st line 2nd line 2nd line Power (W) 1.4 1000 20 1000 1.5 1st line 2nd line 2nd line VGS(th) (V) 1000 TJ = 150 °C 0.03 10 0 ID = 5 A 0.05 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 10 10000 0.06 1st line 2nd line 2nd line IS - Source Current (A) 100 15 100 10 100 1.2 5 1.1 1.0 0 0.001 10 -50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 10 1000 TJ - Temperature (°C) 2nd line Time (s) 2nd line Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 100 IDM limited 100 μs 1 1000 1st line 2nd line 2nd line ID - Drain Current (A) ID limited 10 1 ms Limited by RDS(on) (1) 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single pulse 100 BVDSS limited 0.01 10 0.1 (1) 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S16-2441Rev. A, 05-Dec-16 Document Number: 75354 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA469DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 25 10000 20 15 Package limited 10 1000 1st line 2nd line 15 2nd line Power (W) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 10000 20 10 100 100 5 5 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TC - CaseTemperature (°C) 2nd line Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S16-2441Rev. A, 05-Dec-16 Document Number: 75354 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA469DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 1 0.2 Notes: 0.1 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 PDM 0.05 t1 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 80 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 100 (t) 4. Surface mounted 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty Cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case                   Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75354. S16-2441Rev. A, 05-Dec-16 Document Number: 75354 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000