SIA485DJ-T1-GE3

SiA485DJ www.vishay.com Vishay Siliconix P-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -150 RDS(on) (Ω) MAX. ID (A) 2.6 at VGS = -10 V -1.6 a 2.7 at VGS = -6 V -1.6 a Qg (Typ.) 4.2 nC PowerPAK® SC-70-6L Single S 4 D 5 • TrenchFET® power MOSFET • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance • 100 % Rg and UIS tested D 6 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS S • Active clamp switch 05 2. S 7 m m 1 m 3 G Bottom View m .05 2 Top View 1 D 2 D • Load switch G Marking Code: B4 P-Channel MOSFET Ordering Information: SiA485DJ-T1-GE3 (Lead (Pb)-free and halogen-free) D ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -150 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C -1.6 TC = 70 °C -1.3 TA = 25 °C ID Continuous Source-Drain Diode Current -0.57 b, c Avalanche Current IDM TC = 25 °C TA = 25 °C L = 0.1 mH Single Pulse Avalanche Energy TC = 70 °C TA = 25 °C -1.6 IS -1.6 b, c IAS -1.5 EAS 0.1 mJ 15.6 10 PD W 2.9 b, c 1.8 b, c TA = 70 °C Operating Junction and Storage Temperature Range A -2 TC = 25 °C Maximum Power Dissipation V -0.7 b, c TA = 70 °C Pulsed Drain Current (t = 100 μs) UNIT TJ, Tstg -55 to +150 Soldering Recommendations (Peak Temperature) d, e °C 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient b, f Maximum Junction-to-Case (Drain) SYMBOL TYPICAL MAXIMUM t≤5s RthJA 32 43 Steady State RthJC 6 8 UNIT °C/W Notes a. TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. S14-2235-Rev. A, 10-Nov-14 Document Number: 62988 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA485DJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = -250 μA -150 - - VGS(th) VDS = VGS, ID = -250 μA -2.5 - -4.5 IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VDS = -150 V, VGS = 0 V - - -1 VDS = -150 V, VGS = 0 V, TJ = 55 °C - - -10 VDS ≤ -5 V, VGS = -10 V -0.8 - - VGS = -10 V, ID = -0.5 A - 2.1 2.6 VGS = -6 V, ID = -0.5 A - 2.2 2.7 VDS = -10 V, ID = -0.5 A - 1.5 - - 155 - - 8 - UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance a Dynamic RDS(on) gfs V nA μA A Ω S b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 5.5 - Total Gate Charge Qg - 4.2 6.3 Gate-Source Charge Qgs VDS = -75 V, VGS = -10 V, ID = -0.5 A - 0.9 - Gate-Drain Charge Qgd - 1.3 - Gate Resistance Rg f = 1 MHz 2 10 20 - 5 10 - 20 40 - 10 20 - 20 40 Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = -75 V, VGS = 0 V, f = 1 MHz td(on) tr VDD = -75 V, RL = 75 Ω ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω td(off) tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IS = -0.5 A, VGS = 0 V IF = -1 A, dI/dt = 100 A/μs, TJ = 25 °C - -1.6 - -2 A - -0.8 -1.2 V - 40 80 ns - 65 130 nC - 28 - - 12 - ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-2235-Rev. A, 10-Nov-14 Document Number: 62988 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA485DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.8 0.8 VGS = 10 V thru 5 V 0.7 0.7 0.6 I D - Drain Current (A) I D - Drain Current (A) 0.6 0.5 0.4 0.3 0.2 0.5 0.4 TC = 125 °C 0.3 0.2 25 °C 4V 0.1 0.1 - 55 °C 3V 0.0 0.0 0 VDS - Drain-to-Source Voltage (V) 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2 4 6 8 0 10 1 5 250 4.0 200 3.0 2.5 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 3.5 VGS = 6 V 2.0 VGS = 10 V 1.5 Ciss 150 100 1.0 50 Crss 0.5 Coss 0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 ID - Drain Current (A) 0.7 0 0.8 30 60 On-Resistance vs. Drain Current and Gate Voltage 120 150 Capacitance 10 2.5 VDS = 75 V ID = 0.5 A 8 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 90 VDS - Drain-to-Source Voltage (V) 6 4 2 0 0.0 0.6 1.2 1.8 2.4 3.0 Qg - Total Gate Charge (nC) Gate Charge S14-2235-Rev. A, 10-Nov-14 3.6 4.2 2.0 VGS = 10 V ID = 0.5 A 1.5 1.0 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 62988 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA485DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 6 2 1 RDS(on) - On-Resistance (Ω) I S - Source Current (A) 5 TJ = 150 °C TJ = 25 °C 0.1 4 ID = 0.5 A 3 2 1 0 0.01 0 0.3 0.6 0.9 1.2 1.5 0 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.3 20 ID = 250 µA 1.0 16 0.7 Power (W) V GS(th) Variance (V) 2 VSD - Source-to-Drain Voltage (V) 0.4 12 8 0.1 4 - 0.2 - 0.5 - 50 - 25 0 25 50 75 100 125 0 0.001 150 TJ - Temperature (°C) 1 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 Limited by RDS(on)* 0.01 0.1 10 100 1000 IDM Limited ID(on) Limited ID - Drain Current (A) 1 100 μs 1 ms 0.1 10 ms 100 ms 1s 10 s DC 0.01 TA = 25 °C BVDSS Limited 0.001 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S14-2235-Rev. A, 10-Nov-14 Document Number: 62988 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA485DJ www.vishay.com Vishay Siliconix 2.0 20 1.5 15 Power Dissipation (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 0.5 10 5 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S14-2235-Rev. A, 10-Nov-14 Document Number: 62988 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA485DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62988. S14-2235-Rev. A, 10-Nov-14 Document Number: 62988 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000