SIA811ADJ-T1-GE3

SiA811ADJ www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES PowerPAK® SC-70-6L Dual with Schottky Diode S 4 • LITTLE FOOT® plus Schottky power MOSFET K 6 G 5 K D 05 2. m m 1 m 5m 3 D Bottom View 2.0 Top View 2 NC 1 A • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Marking code: HD • Cellular charger switch PRODUCT SUMMARY MOSFET VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ. (nC) ID (A) a SCHOTTKY VKA (V) VF (V) at 1 A IF (A) a Configuration • New thermally enhanced PowerPAK®  SC-70 package - Small footprint area - Low on-resistance - Thin 0.75 mm profile S K D A • Asynchronous DC/DC for portable devices -20 0.116 0.155 0.205 4.9 -4.5 • Load switch for portable devices G P-Channel MOSFET 20 0.45 2 Dual plus integrated Schottky ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SC-70 SiA811ADJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage (MOSFET) Reverse voltage (Schottky) Gate-source voltage (MOSFET) Continuous drain current (TJ = 150 °C) (MOSFET) SYMBOL VDS VKA VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (MOSFET) Continuous source-drain diode current  (MOSFET diode conduction) IDM TC = 25 °C TA = 25 °C Average forward current (Schottky) Pulsed forward current (Schottky) Maximum power dissipation (MOSFET) Maximum power dissipation (Schottky) Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e S-82482-Rev. A, 13-Oct-08 ID IS IF IFM TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg LIMIT -20 20 ±8 -4.5 a -4.5 a -3.2 b, c -2.6b, c -8 -4.5 a -1.5 b, c 2b 5 6.5 4.2 1.8 b, c 1.1 b, c 6.8 4.3 1.6 b, c 1 b, c -55 to +150 260 UNIT V A W °C Document Number: 68955 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA811ADJ www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum junction-to-ambient (MOSFET) b, f t 5 s RthJA 55 70 Maximum junction-to-case (drain) (MOSFET) Steady state RthJC 15 19 Maximum junction-to-ambient (Schottky) b, f t5s RthJA 62 76 Maximum junction-to-case (drain) (Schottky) Steady state RthJC 15 18.5 UNIT °C/W Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed  copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 110 °C/W  SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -20 - - - V -19 - - 2.4 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = -250 μA mV/°C VGS(th) VDS = VGS, ID = -250 μA -0.4 - -1 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = -20 V, VGS = 0 V - - -1 VDS = -20 V, VGS = 0 V, TJ = 55 °C - - -10 VDS  5 V, VGS = -4.5 V -8 - - VGS = -4.5 V, ID = -2.8 A - 0.096 0.116 VGS = -2.5 V, ID = -2.3 A - 0.126 0.155 VGS = -1.8 V, ID = -0.54 A - 0.165 0.205 VDS = -10 V, ID = -2.8 A - 7 - μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time S-82482-Rev. A, 13-Oct-08 - 345 - VDS = -10 V, VGS = 0 V, f = 1 MHz - 65 - - 50 - VDS = -10 V, VGS = -8 V, ID = -3.5 A - 8.4 13 - 4.9 7.4 VDS = -10 V, VGS = -4.5 V, ID = -3.5 A - 0.75 - - 1.2 - - 6 - - 15 25 - 45 70 30 f = 1 MHz td(on) tr td(off) VDD = -10 V, RL = 2.85  ID  -3.5 A, VGEN = -4.5 V, Rg = 1  - 20 tf - 10 15 td(on) - 5 10 tr td(off) tf VDD = -10 V, RL = 2.85  ID  -3.5 A, VGEN = -8 V, Rg = 1  - 10 15 - 20 30 - 10 15 pF nC  ns Document Number: 68955 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA811ADJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -1 A, VGS = 0 V - - -4.5 - - -8 A - -0.8 -1.2 V - 30 60 ns - 20 40 nC - 15 - - 15 - TEST CONDITIONS MIN. TYP. MAX. IF = 1 A - 0.41 0.45 IF = 1 A, TJ = 125 °C - 0.36 0.41 IF = -4.5 A, di/dt = 100 A/μs, TJ = 25 °C ns Notes a. Pulse test; pulse width 300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing SCHOTTKY SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER Forward voltage drop Maximum reverse leakage current Junction capacitance SYMBOL VF Irm CT Vr = 5 V - 0.015 0.080 Vr = 5 V, TJ = 85 °C - 0.5 5 Vr = 20 V - 0.02 0.10 Vr = 20 V, TJ = 85 °C - 0.7 7 Vr = 20 V, TJ = 125 °C - 5 50 Vr = 10 V - 60 - UNIT V mA pF                                   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S-82482-Rev. A, 13-Oct-08 Document Number: 68955 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA811ADJ www.vishay.com Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 10 VGS = 5 thru 2.5 V VGS = 2 V 6 4 VGS = 1.5 V 1.5 I D - Drain Current (A) I D - Drain Current (A) 8 1.0 TC = 25 °C 0.5 2 TC = 125 °C 0 0.0 0.5 1.0 1.5 TC = - 55 °C 0.0 0.0 2.0 0.3 VDS - Drain-to-Source Voltage (V) 0.9 1.2 1.5 Transfer Characteristics Output Characteristics 0.30 700 0.25 600 VGS = 1.8 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.6 VGS - Gate-to-Source Voltage (V) 0.20 VGS = 2.5 V 0.15 0.10 VGS = 4.5 V 500 Ciss 400 300 200 Coss 0.05 100 Crss 0.00 0 0 2 4 6 8 10 0 5 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.6 8 ID = 2.8 A ID = 3.5 A 6 VDS = 10 V VDS = 5 V VDS = 15 V 4 2 (Normalized) 1.4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 1.2 1.0 VGS = 4.5 V 0.8 0 0 2 4 6 8 10 0.6 - 50 VGS = 1.8 V - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S-82482-Rev. A, 13-Oct-08 Document Number: 68955 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA811ADJ www.vishay.com Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 0.5 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 2.8 A TJ = 150 °C 1 TJ = 25 °C 0.4 0.3 0.2 TJ = 125 °C 0.1 TJ = 25 °C 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 20 0.3 15 Power (W) VGS(th) Variance (V) ID = 250 µA 0.2 ID = 1 mA 0.1 10 0.0 5 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 * Limited by R DS(on) I D - Drain Current (A) 100 µs 1 1 ms 10 ms 100 ms 0.1 1 s, 10 s 100 s, DC BVDSS Limited TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case S-82482-Rev. A, 13-Oct-08 Document Number: 68955 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA811ADJ www.vishay.com Vishay Siliconix 8 8 6 6 Package Limited Power (W) I D - Drain Current (A) MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 4 2 4 2 0 0 0 25 50 75 100 125 150 0 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power Derating 125 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S-82482-Rev. A, 13-Oct-08 Document Number: 68955 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA811ADJ www.vishay.com Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W Single Pulse 3. TJM - T A = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S-82482-Rev. A, 13-Oct-08 Document Number: 68955 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA811ADJ www.vishay.com Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 100 I F - Forward Current (A) I F - Reverse Current (mA) 10 1 20 V 0.1 5V 0.01 0.001 TJ = 150 °C 1 TJ = 25 °C 0.1 0.0001 0.00001 - 50 - 25 0 25 50 100 75 125 0.01 0.0 150 0.1 T J - Junction Temperature (°C) 0.2 0.3 0.4 0.5 VF - Forward Voltage Drop (V) Reverse Current vs. Junction Temperature Forward Voltage Drop CT - Junction Capacitance (pF) 300 240 180 120 60 0 0 4 8 12 16 20 VRS - Reverse Voltage (V) Capacitance S-82482-Rev. A, 13-Oct-08 Document Number: 68955 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA811ADJ www.vishay.com Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 Single Pulse t1 t2 2. Per Unit Base = RthJA = 85 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.02 0.05 Single Pulse 0.1 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68955. S-82482-Rev. A, 13-Oct-08 Document Number: 68955 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 0.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm (inches) Return to Index www.vishay.com 1 Document Number: 70487 Revision: 18-Oct-13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2021 1 Document Number: 91000