SIA914ADJ-T1-GE3

SiA914ADJ www.vishay.com Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 ID (A)a 4.5 4.5 4.5 4.5 RDS(on) () Max. 0.043 at VGS = 4.5 V 0.045 at VGS = 3.7 V 0.050 at VGS = 2.5 V 0.063 at VGS = 1.8 V • TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Qg (Typ.) 3.5 nC PowerPAK SC-70-6 Dual APPLICATIONS 1 S1 • Portable Devices such as Smart Phones, Tablet PCs and Mobile Computing - Load Switch - DC/DC Converter - Power Management 2 G1 3 D2 D1 D1 6 D2 G2 5 2.05 mm 4 2.05 mm S2 D1 D2 Ordering Information: SiA914ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code G1 G2 CJX Part # code XXX S1 N-Channel MOSFET Lot Traceability and Date code S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 TC = 70 °C 4.5a ID TA = 25 °C 4.5a, b, c 4.3b, c TA = 70 °C Pulsed Drain Current (t = 100 μs) IDM TC = 25 °C Continuous Source-Drain Diode Current 4.5a 1.6b, c TC = 25 °C 7.8 TC = 70 °C 5 PD TA = 25 °C W 1.9b, c 1.2b, c TA = 70 °C Operating Junction and Storage Temperature Range A 30 IS TA = 25 °C Maximum Power Dissipation V 4.5a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t5s Symbol RthJA Typical 52 Maximum 65 Steady State RthJC 12.5 16 Unit °C/W Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 °C/W. S13-1270-Rev. A, 27-May-13 Document Number: 62872 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA914ADJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 μA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ ID = 250 μA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 18 mV/°C - 2.5 0.4 0.9 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 VDS  5 V, VGS = 4.5 V 10 μA A VGS = 4.5 V, ID = 3.7 A 0.035 0.043 VGS = 3.7 V, ID = 3 A 0.036 0.045 VGS = 2.5 V, ID = 3 A 0.040 0.050 VGS = 1.8 V, ID = 1 A 0.047 0.063 VDS = 10 V, ID = 3.7 A 18  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time 470 VDS = 10 V, VGS = 0 V, f = 1 MHz tr pF 26 VDS = 10 V, VGS = 8 V, ID = 6 A VDS = 10 V, VGS = 4.5 V, ID = 6 A 8.2 12.5 4.6 7 0.65 VDD = 10 V, RL = 2.1  ID  4.8 A, VGEN = 4.5 V, Rg = 1  0.6 3 6 7 15 20 40 25 50 tf 5 10 td(on) 5 10 5 10 tr td(off) nC 0.6 f = 1 MHz td(on) td(off) 75 VDD = 10 V, RL = 2.1  ID  4.8 A, VGEN = 8 V, Rg = 1  tf 20 40 5 10  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 μs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 4.5 30 IS = 4.8 A, VGS = 0 V IF = 4.8 A, dI/dt = 100 A/μs, TJ = 25 °C A 0.85 1.2 V 9.5 20 ns 3 10 nC 5 4.5 ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.       Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-1270-Rev. A, 27-May-13 Document Number: 62872 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA914ADJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 30 600 25 VGS = 2.5 V 20 VGS = 2 V 15 10 Ciss 500 C - Capacitance (pF) ID - Drain Current (A) VGS = 5 V thru 3 V VGS = 1.5 V 400 300 200 Coss 5 100 Crss VGS = 1 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 4 8 12 16 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Capacitance 8 VGS - Gate-to-Source Voltage (V) 10 8 ID - Drain Current (A) 20 6 4 TC = 25 °C TC = 125 °C 2 ID = 6 A VDS = 10 V 6 VDS = 5 V 4 VDS = 16 V 2 TC = - 55 °C 0 0 0.0 0.4 0.8 1.2 1.6 VGS - Gate-to-Source Voltage (V) 0.0 2.0 1.5 3.0 Transfer Characteristics 6.0 7.5 9.0 Gate Charge 0.0800 1.6 0.0700 ID = 3.7 A VGS = 1.8 V 0.0600 0.0500 VGS = 2.5 V VGS = 3.7 V 0.0400 VGS = 4.5 V 0.0300 5 10 15 20 ID - Drain Current (A) 25 On-Resistance vs. Drain Current and Gate Voltage S13-1270-Rev. A, 27-May-13 VGS = 1.8 V 1.2 1.0 0.8 0.0200 0 VGS = 4.5 V, 3.7 V, 2.5 V 1.4 RDS(on) - On-Resistance (Normalized) RDS(on) - On-Resistance (Ω) 4.5 Qg - Total Gate Charge (nC) 30 0.6 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 62872 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA914ADJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.90 TJ = 150 °C 10 0.70 VGS(th) (V) IS - Source Current (A) 0.80 TJ = 25 °C 1 0.60 ID = 250 μA 0.50 0.40 0.1 0.30 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 1.4 - 50 - 25 Source-Drain Diode Forward Voltage 25 50 75 100 TJ - Temperature (°C) 125 150 Threshold Voltage 0.100 20 ID = 3.7 A 0.080 15 0.060 Power (W) RDS(on) - On-Resistance (Ω) 0 TJ = 125 °C 0.040 10 TJ = 25 °C 5 0.020 0.000 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 0 0.001 5 On-Resistance vs. Gate-to-Source Voltage 0.01 0.1 1 Pulse (s) 10 100 1000 Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 1 ms 0.1 10 ms 100 ms 1s 10 s DC TA = 25 °C BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S13-1270-Rev. A, 27-May-13 Document Number: 62872 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA914ADJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 12 Power Dissipation (W) ID - Drain Current (A) 10 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating  * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S13-1270-Rev. A, 27-May-13 Document Number: 62872 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA914ADJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62872. S13-1270-Rev. A, 27-May-13 Document Number: 62872 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 0.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm (inches) Return to Index www.vishay.com 1 Document Number: 70487 Revision: 18-Oct-13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000