SIB410DK-T1-GE3

SiB410DK Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 • TrenchFET® Power MOSFET a RDS(on) () ID (A) 0.042 at VGS = 4.5 V 9 0.046 at VGS = 2.5 V 9 0.052 at VGS = 1.8 V 9 Qg (Typ.) • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 5.7 nC APPLICATIONS PowerPAK SC-75-6L-Single D • DC/DC Converters • Boost Converters Marking Code 1 D AHX 2 D XXX 3 6 G D 5 S D 1.60 mm S G Lot Traceability and Date code Part # code 1.60 mm 4 S N-Channel MOSFET Ordering Information: SiB410DK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol VDS Limit Drain-Source Voltage Gate-Source Voltage VGS ±8 TC = 70 °C 9a ID TA = 25 °C 5.9b, c TA = 70 °C 4.7b, c 20 IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C 2.1b, c 13 TC = 25 °C 8.4 PD TA = 25 °C W 2.5b, c 1.6b, c - 55 to 150 TA = 70 °C Operating Junction and Storage Temperature Range A 9a IS TA = 25 °C TC = 70 °C Maximum Power Dissipation V 9a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit 30 TJ, Tstg Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Symbol RthJA Typical Maximum t5s 41 51 Steady State RthJC 7.5 9.5 Unit °C/W Notes: a. Package limited, TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 °C/W. Document Number: 67020 S13-0630-Rev. B, 25-Mar-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB410DK Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient V 31 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1 V IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) gfs Forward Transconductancea VDS 5 V, VGS = 10 V - 2.7 0.4 10 µA A VGS 4.5 V, ID = 3.8 A 0.034 0.042 VGS 2.5 V, ID = 3.6 A 0.038 0.046 VGS 1.8 V, ID = 2 A 0.041 0.052 VDS = 15 V, ID = 3.8 A 30  S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 560 VDS = 15 V, VGS = 0 V, f = 1 MHz tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 10 15 5.7 8.6 VDS = 15 V, VGS = 4.5 V, ID = 3.4 A 0.85 VDD = 15 V, RL = 4.3  ID  3.5 A, VGEN = 4.5 V, Rg = 1  3 6 6 12 10 20 20 40 10 20 5 10 10 20 VDD = 15 V, RL = 4.3  ID  3.5 A, VGEN = 8 V, Rg = 1  tf Fall Time 0.6 td(on) td(off) Turn-Off Delay Time nC 0.75 f = 1 MHz tf tr Rise Time pF VDS = 15 V, VGS = 8 V, ID = 3.4 A td(on) Turn-On Delay Time 60 27 17 30 10 20  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 1.5 20 IS = 3.5 A, VGS 0 V IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 15 30 ns 6 12 nC 8 7 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 67020 S13-0630-Rev. B, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB410DK Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 20 V GS = 5 V thru 2 V 8 V GS = 1.5 V ID - Drain Current (A) ID - Drain Current (A) 16 12 8 6 4 T C = 25 °C 2 4 V GS = 1 V T C = 125 °C V GS = 0.5 V T C = - 55 °C 0 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 0.3 1.2 1.5 Transfer Characteristics 0.06 800 0.05 600 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Output Characteristics V GS = 1.8 V V GS = 2.5 V V GS = 4.5 V 0.03 0.9 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.04 0.6 Ciss 400 200 Coss 0.02 Crss 0 0 4 8 12 16 20 0 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 30 1.6 8 V GS = 4.5 V, V GS = 2.5 V ID = 3.8 A ID = 4.3 A V DS = 7.5 V V DS = 24 V 4 V DS = 15 V (Normalized) 1.4 6 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 5 V GS = 1.8 V 1.2 1.0 2 0.8 0 0 2 4 6 8 10 0.6 - 50 - 25 Document Number: 67020 S13-0630-Rev. B, 25-Mar-13 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge 0 On-Resistance vs. Junction Temperature For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB410DK Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.10 100 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 3.8 A T J = 150 °C 10 T J = 25 °C 1 0.08 0.06 T J = 125 °C 0.04 T J = 25 °C 0.02 0 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 20 0.8 0.7 15 Power (W) VGS(th) (V) 0.6 0.5 ID = 250 μA 10 0.4 5 0.3 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 10 1 100 1000 Pulse (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 100 Limited by R DS(on) * ID - Drain Current (A) 10 100 μs 1 1 ms 10 ms 100 ms 1 s, 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical questions, contact: pmostechsupport@vishay.com Document Number: 67020 S13-0630-Rev. B, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB410DK Vishay Siliconix 15 15 12 12 Package Limited Power (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 9 6 3 9 6 3 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67020 S13-0630-Rev. B, 25-Mar-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB410DK Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 105 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67020. www.vishay.com 6 For technical questions, contact: pmostechsupport@vishay.com Document Number: 67020 S13-0630-Rev. B, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 b e PIN3 PIN2 PIN1 PIN3 PIN6 K3 PIN5 E1 E1 K K D1 D1 D1 E3 E1 D2 K E2 K4 L PIN2 L PowerPAK® SC75-6L PIN6 K2 PIN4 K1 K2 BACKSIDE VIEW OF SINGLE PIN5 K1 PIN4 K2 BACKSIDE VIEW OF DUAL D A E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating C A1 Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 D1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021 D2 0.10 0.20 0.30 0.004 0.008 0.012 E 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 E1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028 E2 0.20 0.25 0.30 0.008 0.010 0.012 E3 0.32 0.37 0.42 0.013 0.015 0.017 e 0.50 BSC 0.020 BSC 0.50 BSC 0.020 BSC K 0.180 TYP 0.007 TYP 0.245 TYP 0.010 TYP K1 0.275 TYP 0.011 TYP 0.320 TYP 0.013 TYP K2 0.200 TYP 0.008 TYP 0.200 BSC 0.008 TYP K3 0.255 TYP 0.010 TYP K4 0.300 TYP L 0.15 0.25 0.012 TYP 0.35 T 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014 0.03 0.08 0.13 0.001 0.003 0.005 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single 1.250 (0.049) 0.250 (0.01) 0.500 (0.02) 0.250 (0.01) 0.400 (0.016) 0.300 (0.012) 0.180 (0.007) 0.370 (0.015) 1.700 (0.067) 1.100 0.620 (0.024) (0.043) 2.000 (0.079) 0.200 (0.008) 0.300 (0.012) 0.300 (0.012) 1 0.545 (0.021) 0.250 (0.01) 0.670 (0.026) 2.000 (0.079) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70488 Revision: 21-Jan-08 www.vishay.com 13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000