SIB914DK-T1-GE3

New Product SiB914DK Vishay Siliconix Dual N-Channel 1.2-V (G-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.113 at VGS = 4.5 V 1.5a 0.138 at VGS = 2.5 V 1.5a 0.190 at VGS = 1.8 V 1.5 a 0.280 at VGS = 1.5 V 1.0 0.480 at VGS = 1.2 V 0.3 VDS (V) 8 • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance Qg (Typ.) 1.5 nC • Load Switch, PA Switch and Battery Switch for Portable Devices • DC/DC Converter D1 D2 1 S1 Marking Code 2 G1 3 D2 D1 CBX Part # code D2 G2 5 1.60 mm 4 S2 COMPLIANT APPLICATIONS PowerPAK SC75-6L-Dual D1 6 RoHS G1 XXX G2 Lot Traceability and Date code 1.60 mm Ordering Information: SiB914DK-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e ID IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Limit 8 ±5 1.5a 1.5a 1.5a, b, c 1.5a, b, c 6 1.5a 0.9b, c 3.1 2.0 1.1b, c 0.7b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t≤5s RthJA 90 115 Maximum Junction-to-Ambientb, f °C/W RthJC Maximum Junction-to-Case (Drain) Steady State 32 40 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 125 °C/W. g. Based on TC = 25 °C. Document Number: 68792 S-81946-Rev. A, 25-Aug-08 www.vishay.com 1 New Product SiB914DK Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 8 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 5 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 8.3 mV/°C - 2.1 0.35 0.8 V ± 100 nA VDS = 8 V, VGS = 0 V 1 VDS = 8 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 4.5 V 6 µA A VGS = 4.5 V, ID = 2.5 A 0.090 0.113 VGS = 2.5 V, ID = 2.2 A 0.110 0.138 VGS = 1.8 V, ID = 1.9 A 0.150 0.190 VGS = 1.5 V, ID = 1.0 A 0.200 0.280 VGS = 1.2 V, ID = 0.1 A 0.280 0.480 VDS = 4 V, ID = 2.5 A 10 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 125 VDS = 4 V, VGS = 0 V, f = 1 MHz 35 VDS = 4 V, VGS = 5 V, ID = 2.5 A VDS = 4 V, VGS = 4.5 V, ID = 2.5 A tr 1.7 2.6 1.5 2.3 0.25 nC 0.25 f = 1 MHz td(on) td(off) pF 68 VDD = 4 V, RL = 2 Ω ID ≅ 2.0 A, VGEN = 4.5 V, Rg = 1 Ω tf 0.7 3.5 7.0 4 8 7 14 22 33 9 19 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD 1.5c TC = 25 °C 6 IS = 2.0 A, VGS = 0 V 0.7 1.2 A V Body Diode Reverse Recovery Time trr 10 15 ns Body Diode Reverse Recovery Charge Qrr 2 4 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 2.0 A, dI/dt = 100 A/µs, TJ = 25 °C 4 6 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68792 S-81946-Rev. A, 25-Aug-08 New Product SiB914DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 1.0 VGS = 5 thru 2.5 V VGS = 2 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 5 4 3 VGS = 1.5 V 2 0.6 0.4 TC = 25 °C 0.2 1 TC = 125 °C VGS = 1 V 0 0 1 2 3 4 TC = - 55 °C 0.0 0.0 5 0.3 VDS - Drain-to-Source Voltage (V) 0.4 160 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 200 0.3 VGS = 1.8 V 0.2 VGS = 2.5 V 0.1 VGS = 4.5 V 0 1 2 3 4 120 Coss 80 Crss 5 0 6 0 2 4 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 5 8 1.7 ID = 2.5 A 4 VGS = 1.8 V; ID = 1.9 A 1.5 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 6 ID - Drain Current (A) VDS = 4 V 3 VDS = 6.4 V 2 1 0 0.0 1.5 Ciss 40 0.0 1.2 Transfer Characteristics 0.5 VGS = 1.5 V 0.9 VGS - Gate-to-Source Voltage (V) Output Characteristics VGS = 1.2 V 0.6 VGS = 2.5 V; ID = 2.2 A 1.3 1.1 VGS = 4.5 V; ID = 2.5 A 0.9 0.4 0.8 1.2 1.6 2.0 0.7 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 68792 S-81946-Rev. A, 25-Aug-08 150 www.vishay.com 3 New Product SiB914DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.25 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 2.5 A TJ = 25 °C TJ = 150 °C 1 0.1 0.0 0.20 0.15 TJ = 125 °C 0.10 TJ = 25 °C 0.05 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 8 0.8 0.7 Power (W) VGS(th) (V) 6 0.6 ID = 250 µA 0.5 4 2 0.4 0.3 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 I D - Drain Current (A) Limited by RDS(on)* 100 µs 1 1 ms 10 ms 100 ms 1 s, 10 s DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 68792 S-81946-Rev. A, 25-Aug-08 New Product SiB914DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 I D - Drain Current (A) 4 3 2 Package Limited 1 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4 1.5 1.2 Power (W) Power (W) 3 2 0.9 0.6 1 0.3 0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Case 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68792 S-81946-Rev. A, 25-Aug-08 www.vishay.com 5 New Product SiB914DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68792. www.vishay.com 6 Document Number: 68792 S-81946-Rev. A, 25-Aug-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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