SIB422EDK-T4-GE3

SiB422EDK www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PowerPAK® SC-75-6L Single S 4 D 5 • TrenchFET® power MOSFET D 6 6 1. S 7 m m 1 1.6 mm Top View 3 G Bottom View 2 D 1 D • Typical ESD protection 4000 V • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Marking code: AF PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V RDS(on) max. () at VGS = 1.8 V RDS(on) max. () at VGS = 1.5 V Qg typ. (nC) ID (A) a Configuration • Thermally enhanced PowerPAK® SC-75 package - Small footprint area - Low on-resistance - Thin 0.75 mm profile APPLICATIONS 20 0.030 0.041 0.057 0.082 6 9 Single • Portable devices - Load switch - Battery switch D R G S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SC-75 SiB422EDK-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current Continuous source-drain diode current Maximum power dissipation Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e ID IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg LIMIT 20 ±8 9a 9a 7.1 b, c 5.7 b, c 25 9a 2.1 b, c 13 8.4 2.5 b, c 1.6 b, c -55 to +150 260 UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t5s RthJA 41 51 Maximum junction-to-ambient b, f °C/W Maximum junction-to-case (drain) Steady state RthJC 7.5 9.5 Notes a. Package limited, TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 105 °C/W S09-1919-Rev. A, 28-Sep-09 Document Number: 65297 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB422EDK www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 20 - - V - 18 - - -2.5 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage VGS(th) Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance a IGSS IDSS ID(on) RDS(on) gfs ID = 250 μA VDS = VGS, ID = 250 μA 0.4 - 1.0 VDS = 0 V, VGS = ± 4.5 V - - ± 1.5 VDS = 0 V, VGS = ± 8 V - - ± 25 VDS = 20 V, VGS = 0 V - - 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C - - 10 VDS  5 V, VGS = 4.5 V 15 - - VGS = 4.5 V, ID = 5 A - 0.025 0.030 VGS = 2.5 V, ID = 4.3 A - 0.034 0.041 VGS = 1.8 V, ID = 1.5 A - 0.046 0.057 VGS = 1.5 V, ID = 1 A - 0.055 0.082 VDS = 10 V, ID = 5 A - 28 - mV/°C V μA A  S Dynamic b Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 10 V, VGS = 8 V, ID = 7.1 A - 11.5 18 - 6 9 VDS = 10 V, VGS = 4.5 V, ID = 7.1 A - 0.8 - - 1.6 - f = 1 MHz 460 2300 4600 - 0.3 0.45 - 0.6 0.9 td(on) tr td(off) VDD = 10 V, RL = 1.8  ID  5.7 A, VGEN = 4.5 V, Rg = 1  nC  - 3.8 6 tf - 1.7 2.6 td(on) - 0.15 0.25 - 0.3 0.45 - 5.6 9 - 1.6 2.5 - - 9 - - 25 - 0.85 1.2 V - 15 30 ns - 7.5 15 nC - 8 - - 15 - tr td(off) VDD = 10 V, RL = 1.8  ID  5.7 A, VGEN = 10 V, Rg = 1  tf μs Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 5.7 A, VGS = 0 V IF = 5.7 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing    Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S09-1919-Rev. A, 28-Sep-09 Document Number: 65297 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB422EDK www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 80 10-1 10-3 60 I G - Gate Current (A) I G - Gate Current (mA) 10-2 TJ = 25 °C 40 10-4 10-5 TJ = 150 °C 10-6 10-7 TJ = 25 °C 20 10-8 10-9 0 10-10 0 3 6 9 12 15 3 6 12 15 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage Gate Current vs. Gate-to-Source Voltage 10 VGS = 5 V thru 2 V 20 I D - Drain Current (A) 8 15 VGS = 1.5 V 10 5 6 4 TC = 25 °C 2 TC = 125 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 TC = - 55 °C 0.3 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 1.5 8 VGS = 1.5 V ID = 7.1 A VGS - Gate-to-Source Voltage (V) R DS(on) - On-Resistance (Ω) 9 VGS - Gate-to-Source Voltage (V) 25 I D - Drain Current (A) 0 0.08 VGS = 1.8 V 0.06 VGS = 2.5 V 0.04 VGS = 4.5 V 0.02 0.00 6 VDS = 7.5 V VDS = 16 V 4 VDS = 10 V 2 0 0 5 10 15 20 ID - Drain Current (A) On-Resistance vs. Drain Current S09-1919-Rev. A, 28-Sep-09 25 0 2 4 6 8 10 12 Qg - Total Gate Charge (nC) Gate Charge Document Number: 65297 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB422EDK www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.6 100 (Normalized) R DS(on) - On-Resistance I S - Source Current (A) VGS = 2.5 V, 4.5 V; ID = 5 A 1.4 1.2 1.0 VGS = 1.5 V, 1.8 V; ID = 1.5 A 10 TJ = 150 °C TJ = 25 °C 1 0.8 0.6 - 50 - 25 0 25 50 75 100 125 0.1 0.0 150 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Normalized On-Resistance vs. Junction Temperature 0.12 20 15 ID = 1 A; TJ = 125 °C 0.08 Power (W) R DS(on) - On-Resistance (Ω) 0.10 ID = 5 A; TJ = 125 °C 0.06 10 0.04 ID = 5 A; TJ = 25 °C 0.02 5 ID = 1 A; TJ = 25 °C 0.00 0 1 2 3 4 0 0.001 5 0.01 0.1 VGS - Gate-to-Source Voltage (V) 1 10 1000 100 Pulse (s) Single Pulse Power, Junction-to-Ambient On-Resistance vs. Gate-to-Source Voltage 100 0.7 Limited by RDS(on)* I D - Drain Current (A) 0.6 VGS(th) (V) 0.5 ID = 250 µA 0.4 0.3 10 100 µs 1 ms 1 10 ms 0.1 0.2 100 ms 1 s, 10 s TA = 25 °C Single Pulse DC BVDSS Limited 0.1 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage S09-1919-Rev. A, 28-Sep-09 100 125 150 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65297 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB422EDK www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 15 18 16 12 12 Power (W) I D - Drain Current (A) 14 Package Limited 10 8 9 6 6 4 3 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating a 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S09-1919-Rev. A, 28-Sep-09 Document Number: 65297 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB422EDK www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 105 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65297. S09-1919-Rev. A, 28-Sep-09 Document Number: 65297 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 b e PIN3 PIN2 PIN1 PIN3 PIN6 K3 PIN5 E1 E1 K K D1 D1 D1 E3 E1 D2 K E2 K4 L PIN2 L PowerPAK® SC75-6L PIN6 K2 PIN4 K1 K2 BACKSIDE VIEW OF SINGLE PIN5 K1 PIN4 K2 BACKSIDE VIEW OF DUAL D A E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating C A1 Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 D1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021 D2 0.10 0.20 0.30 0.004 0.008 0.012 E 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 E1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028 E2 0.20 0.25 0.30 0.008 0.010 0.012 E3 0.32 0.37 0.42 0.013 0.015 0.017 e 0.50 BSC 0.020 BSC 0.50 BSC 0.020 BSC K 0.180 TYP 0.007 TYP 0.245 TYP 0.010 TYP K1 0.275 TYP 0.011 TYP 0.320 TYP 0.013 TYP K2 0.200 TYP 0.008 TYP 0.200 BSC 0.008 TYP K3 0.255 TYP 0.010 TYP K4 0.300 TYP L 0.15 0.25 0.012 TYP 0.35 T 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014 0.03 0.08 0.13 0.001 0.003 0.005 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single 1.250 (0.049) 0.250 (0.01) 0.500 (0.02) 0.250 (0.01) 0.400 (0.016) 0.300 (0.012) 0.180 (0.007) 0.370 (0.015) 1.700 (0.067) 1.100 0.620 (0.024) (0.043) 2.000 (0.079) 0.200 (0.008) 0.300 (0.012) 0.300 (0.012) 1 0.545 (0.021) 0.250 (0.01) 0.670 (0.026) 2.000 (0.079) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70488 Revision: 21-Jan-08 www.vishay.com 13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000