SIB437EDKT

New Product SiB437EDKT Vishay Siliconix P-Channel 8 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.034 at VGS = - 4.5 V -8 0.063 at VGS = - 1.8 V 0.084 at VGS = - 1.5 V 0.180 at VGS = - 1.2 V ID (A) - 9a -5 -3 -1 10.5 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package with ultra-thin 0.6 mm height - Small Footprint Area - Low On-Resistance • 100 % Rg Tested • Typical ESD Performance 2000 V • Built in ESD Protection with Zener Diode • Compliant to RoHS Directive 2002/95/EC Thin PowerPAK SC-75-6L-Single APPLICATIONS D D 5 1 2 3 S • Load Switch for Portable Devices • Load Switch for Low Voltage Gate Drive D 6 Marking Code 0.60 mm D S S 4 G G R 1.60 mm BMX Part # code XXX Lot Traceability and Date code 1.60 mm D Ordering Information: SiB437EDKT-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit -8 ±5 - 9a - 9a - 7.5b, c - 6b, c - 25 - 9a - 2b, c 13 8.4 2.4b, c 1.6b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current A Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t5s Steady State Symbol RthJA RthJC Typical 41 7.5 Maximum 51 9.5 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg?73257). The Thin PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 °C/W. Document Number: 67402 S11-0235-Rev. A, 14-Feb-11 www.vishay.com 1 New Product SiB437EDKT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 5 V VDS = - 8 V, VGS = 0 V VDS = - 8 V, VGS = 0 V, TJ = 55 °C VDS - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 3 A Drain-Source On-State Resistancea RDS(on) VGS = - 1.8 V, ID = - 1 A VGS = - 1.5 V, ID = - 0.5 A VGS = - 1.2 V, ID = - 0.5 A Forward Transconductance Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = - 6 A, dI/dt = 100 A/µs, TJ = 25 °C IS = - 6 A, VGS = 0 V - 0.8 30 12 12 18 TC = 25 °C -9 - 25 - 1.2 60 25 A V ns nC ns Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = - 4 V, RL = 0.7  ID  - 6 A, VGEN = - 4.5 V, Rg = 1  f = 1 MHz 80 VDS = - 4 V, VGS = - 4.5 V, ID = - 7.4 A 10.5 1.5 3.3 400 90 170 690 630 800 180 340 1380 1260 ns  16 nC a Symbol Test Conditions Min. -8 Typ. Max. Unit V -2 2.2 - 0.35 - 0.7 ±5 -1 - 10 - 15 0.028 0.050 0.060 0.100 14 0.034 0.063 0.084 0.180 mV/°C V µA A  gfs VDS = - 4 V, ID = - 3 A S Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 67402 S11-0235-Rev. A, 14-Feb-11 New Product SiB437EDKT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 6.000 1.E-02 1.E-03 1.E-04 4.000 IGSS - Gate Current (A) 1.E-05 1.E-06 1.E-07 1.E-08 1.E-09 0.000 0 2 4 6 8 10 1.E-10 0 2 4 6 8 10 TJ = 25 °C TJ = 150 °C 5.000 IGSS - Gate Current (mA) 3.000 TJ = 25 °C 2.000 1.000 VGS - Gate-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 25 VGS = 5 V thru 2.5 V 20 VGS = 2 V ID - Drain Current (A) ID - Drain Current (A) 15 3 4 5 Gate Current vs. Gate-Source Voltage TC = 25 °C 2 10 VGS = 1.5 V 5 VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 TC = 125 °C TC = - 55 °C 0 0.0 0.3 0.6 0.9 1.2 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.20 6 Transfer Characteristics 0.16 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) 5 ID = 7.4 A VDS = 2 V 4 VDS = 4 V VDS = 6.4 V 0.12 VGS = 1.2 V 0.08 VGS = 1.5 V VGS = 1.8 V 3 2 0.04 VGS = 4.5 V 1 0.00 0 5 10 15 20 25 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) ID - Drain Current (A) On-Resistance vs. Drain Current Gate Charge Document Number: 67402 S11-0235-Rev. A, 14-Feb-11 www.vishay.com 3 New Product SiB437EDKT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.3 VGS = 4.5 V; ID = 3 A 1.2 RDS(on) - On-Resistance (Normalized) VGS = 1.8 V; ID = 1 A VGS = 1.5 V; ID = 0.5 A 1.1 IS - Source Current (A) 10 TJ = 150 °C 100 1.0 VGS = 1.2 V; ID = 0.5 A 1 TJ = 25 °C 0.9 0.8 - 50 - 25 0 25 50 75 100 125 150 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 0.14 0.12 RDS(on) - On-Resistance (Ω) 0.10 0.08 ID = 0.5 A; TJ = 125 °C 0.06 ID = 3 A; TJ = 25 °C 0.04 ID = 0.5 A; TJ = 25 °C 0.02 0.00 0.0 0.2 - 50 0.3 ID = 3 A; TJ = 125 °C 0.6 0.7 Soure-Drain Diode Forward Voltage ID = 250 μA VGS(th) (V) 0.5 0.4 1.0 2.0 3.0 4.0 5.0 - 25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage 20 100 Threshold Voltage Limited by RDS(on)* 15 ID - Drain Current (A) 10 100 μs 1 ms Power (W) 10 1 10 ms 100 ms 1 s, 10 s 5 0.1 DC TA = 25 °C Single Pulse BVDSS Limited 1 10 100 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 0.01 0.1 Single Pulse Power, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 67402 S11-0235-Rev. A, 14-Feb-11 New Product SiB437EDKT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 15 16 ID - Drain Current (A) 12 12 Package Limited 8 Power (W) 9 6 4 3 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67402 S11-0235-Rev. A, 14-Feb-11 www.vishay.com 5 New Product SiB437EDKT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 Single Pulse 2. Per Unit Base = R thJA = 105 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67402. www.vishay.com 6 Document Number: 67402 S11-0235-Rev. A, 14-Feb-11 Package Information Vishay Siliconix CASE OUTLINE FOR THIN PPAK SC75 SINGLE D A MILLIMETERS DIM. A A1 b C D D1 Pin 1 Dot by Marking A1 E INCHES MIN. 0.0206 0 0.007 0.006 0.060 0.022 0.004 0.060 0.039 0.008 0.013 NOM. 0.024 0.010 0.008 0.063 0.026 0.008 0.063 0.043 0.010 0.015 0.020 BSC 0.007 typ. 0.011 typ. 0.008 typ. 0.010 typ. 0.012 typ. MAX. 0.026 0.002 0.013 0.0010 0.067 0.030 0.012 0.067 0.047 0.012 0.017 MIN. 0.525 0 0.18 0.15 1.53 0.57 0.10 1.53 1.00 0.20 0.32 NOM. 0.60 0.25 0.20 1.60 0.67 0.20 1.60 1.10 0.25 0.37 0.65 BSC 0.180 typ. 0.275 typ. 0.200 typ. 0.255 typ. 0.300 typ. MAX. 0.65 0.05 0.33 0.25 1.70 0.77 0.30 1.70 1.20 0.30 0.42 D2 E E1 E2 E3 Z Detail Z C e K K1 K2 K3 K4 L 0.15 Z b Pin 2 Pin 3 L e Pin 1 E2 K4 D2 E1 0.25 0.35 0.006 0.010 0.014 ECN: C11-0404-Rev. A, 11-Apr-11 DWG: 5999 Note • All dimensions are in millimeter • Package outline exculsive of mold flash and metal burr • Package outline inclusive of plating Pin 6 K3 Pin 5 K1 Pin 4 K2 Backside View of Single Document Number: 67873 Revison: 11-Apr-11 K E3 D1 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1