SIB422EDK

New Product SiB422EDK Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 4.5 V 20 0.041 at VGS = 2.5 V 0.057 at VGS = 1.8 V 0.082 at VGS = 1.5 V ID (A)a 9 9 9 5 6 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm Profile • Typical ESD Protection 4000 V • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PowerPAK SC-75-6L-Single D 1 D 2 D 3 6 D 5 D S 4 S 1.60 mm G APPLICATIONS Marking Code AFX Part # code XXX Lot Traceability and Date code • Portable Devices - Load Switch - Battery Switch R G 1.60 mm Ordering Information: SiB422EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 20 ±8 9a 9a 7.1b, c 5.7b, c 25 9a 2.1b, c 13 8.4 2.5b, c 1.6b, c - 55 to 150 260 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) b, f t≤5s Steady State Symbol RthJA RthJC Typical 41 7.5 Maximum 51 9.5 Unit °C/W Notes: a. Package limited, TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 105 °C/W. Document Number: 65297 S09-1919-Rev. A, 28-Sep-09 www.vishay.com 1 New Product SiB422EDK Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 4.5 V VDS = 0 V, VGS = ± 8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 5 A VGS = 2.5 V, ID = 4.3 A VGS = 1.8 V, ID = 1.5 A VGS = 1.5 V, ID = 1 A Forward Transconductancea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 5.7 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 5.7 A, VGS = 0 V 0.85 15 7.5 8 15 TC = 25 °C 9 25 1.2 30 15 A V ns nC ns Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 10 V, RL = 1.8 Ω ID ≅ 5.7 A, VGEN = 10 V, Rg = 1 Ω VDD = 10 V, RL = 1.8 Ω ID ≅ 5.7 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz 0.46 VDS = 10 V, VGS = 8 V, ID = 7.1 A VDS = 10 V, VGS = 4.5 V, ID = 7.1 A 11.5 6 0.8 1.6 2.3 0.3 0.6 3.8 1.7 0.15 0.3 5.6 1.6 4.6 0.45 0.9 6 2.6 0.25 0.45 9 2.5 µs kΩ 18 9 nC gfs VDS = 10 V, ID = 5 A 15 0.025 0.034 0.046 0.055 28 0.030 0.041 0.057 0.082 S Ω 0.4 20 18 - 2.5 1.0 ± 1.5 ± 25 1 10 A µA V mV/°C V Symbol Test Conditions Min. Typ. Max. Unit Drain-Source On-State Resistancea RDS(on) Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65297 S09-1919-Rev. A, 28-Sep-09 New Product SiB422EDK Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 80 10-1 10-2 I G - Gate Current (mA) TJ = 25 °C 40 I G - Gate Current (A) 60 10-3 10-4 10-5 10-6 10-7 10-8 10-9 TJ = 150 °C TJ = 25 °C 20 0 0 3 6 9 12 15 10-10 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage 25 VGS = 5 V thru 2 V I D - Drain Current (A) 10 Gate Current vs. Gate-to-Source Voltage 20 I D - Drain Current (A) 8 15 VGS = 1.5 V 6 10 4 TC = 25 °C 2 TC = 125 °C 0 0.0 TC = - 55 °C 0.3 0.6 0.9 1.2 1.5 5 VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.10 VGS = 1.5 V R DS(on) - On-Resistance (Ω) 0.08 VGS = 1.8 V 0.06 VGS = 2.5 V 0.04 VGS = 4.5 V 0.02 VGS - Gate-to-Source Voltage (V) 6 8 Transfer Characteristics ID = 7.1 A VDS = 7.5 V VDS = 16 V 4 VDS = 10 V 2 0.00 0 5 10 15 20 25 0 0 2 4 6 8 10 12 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge Document Number: 65297 S09-1919-Rev. A, 28-Sep-09 www.vishay.com 3 New Product SiB422EDK Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.6 VGS = 2.5 V, 4.5 V; ID = 5 A I S - Source Current (A) 100 1.4 R DS(on) - On-Resistance 10 (Normalized) 1.2 TJ = 150 °C TJ = 25 °C 1 1.0 VGS = 1.5 V, 1.8 V; ID = 1.5 A 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) Normalized On-Resistance vs. Junction Temperature 0.12 20 Source-Drain Diode Forward Voltage 0.10 R DS(on) - On-Resistance (Ω) 15 0.08 ID = 1 A; TJ = 125 °C ID = 5 A; TJ = 125 °C Power (W) 0.06 10 0.04 ID = 5 A; TJ = 25 °C 0.02 ID = 1 A; TJ = 25 °C 0 0.001 5 0.00 0 1 2 3 4 5 0.01 0.1 1 Pulse (s) 10 100 1000 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 0.7 100 Single Pulse Power, Junction-to-Ambient Limited by RDS(on)* 0.6 I D - Drain Current (A) 10 100 µs 1 1 ms 10 ms 100 ms 1 s, 10 s DC BVDSS Limited 0.1 - 50 0.01 0.1 0.5 VGS(th) (V) ID = 250 µA 0.4 0.3 0.1 0.2 TA = 25 °C Single Pulse - 25 0 25 50 75 100 125 150 1 10 100 TJ - Temperature (°C) Threshold Voltage VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65297 S09-1919-Rev. A, 28-Sep-09 New Product SiB422EDK Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 18 16 14 I D - Drain Current (A) 12 Power (W) 12 15 10 8 6 4 2 0 0 Package Limited 9 6 3 0 25 50 75 100 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65297 S09-1919-Rev. A, 28-Sep-09 www.vishay.com 5 New Product SiB422EDK Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 105 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65297. www.vishay.com 6 Document Number: 65297 S09-1919-Rev. A, 28-Sep-09 Package Information Vishay Siliconix PowerPAK® SC75-6L PIN1 e b e b PIN2 PIN3 L PIN1 PIN2 PIN3 L D2 E1 E2 K4 E1 K D1 K E3 D1 D1 K PIN6 K3 PIN5 PIN4 K1 K2 PIN6 K2 PIN5 K1 PIN4 K2 BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL D A Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating E A1 C z Z DETAIL Z SINGLE PAD DIM Min A A1 b C D D1 D2 E E1 E2 E3 e K K1 K2 K3 K4 L T ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 06-Aug-07 0.15 0.675 0 0.18 0.15 1.53 0.57 0.10 1.53 1.00 0.20 0.32 MILLIMETERS Nom 0.75 0.25 0.20 1.60 0.67 0.20 1.60 1.10 0.25 0.37 0.50 BSC 0.180 TYP 0.275 TYP 0.200 TYP 0.255 TYP 0.300 TYP 0.25 0.35 0.006 Max 0.80 0.05 0.33 0.25 1.70 0.77 0.30 1.70 1.20 0.30 0.42 Min 0.027 0 0.007 0.006 0.060 0.022 0.004 0.060 0.039 0.008 0.013 INCHES Nom 0.030 0.010 0.008 0.063 0.026 0.008 0.063 0.043 0.010 0.015 0.020 BSC 0.007 TYP 0.011 TYP 0.008 TYP 0.010 TYP 0.012 TYP 0.010 0.014 0.15 0.03 0.25 0.08 Max 0.032 0.002 0.013 0.010 0.067 0.030 0.012 0.067 0.047 0.012 0.017 0.50 BSC 0.245 TYP 0.320 TYP 0.200 BSC 1.53 0.51 1.60 0.61 Min 0.675 0 0.18 0.15 1.53 0.34 MILLIMETERS Nom 0.75 0.25 0.20 1.60 0.44 E1 DUAL PAD INCHES Max 0.80 0.05 0.33 0.25 1.70 0.54 1.70 0.71 Min 0.027 0 0.007 0.006 0.060 0.013 0.060 0.020 Nom 0.030 0.010 0.008 0.063 0.017 0.063 0.024 Max 0.032 0.002 0.013 0.010 0.067 0.021 0.067 0.028 0.020 BSC 0.010 TYP 0.013 TYP 0.008 TYP 0.35 0.13 0.006 0.001 0.010 0.003 0.014 0.005 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single 1.250 (0.049) 0.250 (0.01) 0.250 (0.01) 0.400 (0.016) 0.500 (0.02) 0.300 (0.012) 0.180 (0.007) 0.370 (0.015) 1.700 (0.067) 1.100 (0.043) 0.620 (0.024) 2.000 (0.079) 0.200 (0.008) 0.300 (0.012) 0.300 (0.012) 1 0.545 (0.021) 0.250 (0.01) 0.670 (0.026) 2.000 (0.079) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70488 Revision: 21-Jan-08 www.vishay.com 13 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1