SIB406EDK

New Product SiB406EDK Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.046 at VGS = 4.5 V 0.063 at VGS = 2.5 V ID (A)a 6 3.5 nC 6 Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance • Typical ESD Protection 560 V APPLICATIONS PowerPAK SC-75-6L-Single • Load Switch for Portable Applications • High Frequency DC/DC Converter D 1 D 2 D 3 6 D 5 D S 4 S 1.60 mm G ADX Part # code XXX Lot Traceability and Date code Marking Code G 1.60 mm S Ordering Information: SiB406EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Continuous Source-Drain Diode Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit 20 ± 12 6a 6a 5.1b, c 4.1b, c 15 6a 1.6b, c 10 6.4 1.95b, c 1.25b, c - 55 to 150 260 Unit V A PD TJ, Tstg W °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit t≤5s RthJA 51 64 Maximum Junction-to-Ambientb, f °C/W RthJC 10 12.5 Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 100 °C/W. Document Number: 69088 S-83095-Rev. A, 29-Dec-08 www.vishay.com 1 Parameter New Product SiB406EDK Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 3.9 A VGS = 2.5 V, ID = 3.3 A VDS = 10 V, ID = 3.9 A Min. 20 Typ. Max. Unit V 23 - 3.3 0.6 1.4 ±8 -1 - 10 10 0.037 0.051 14 0.046 0.063 mV/°C V µA A Ω S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 350 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 5.1 A 63 37 7.5 3.5 VDS = 10 V, VGS = 4.5 V, ID = 5.1 A f = 1 MHz 0.95 0.75 3.5 10 VDD = 10 V, RL = 2.4 Ω ID ≅ 4.1 A, VGEN = 4.5 V, Rg = 1 Ω 12 18 12 5 VDD = 10 V, RL = 2.4 Ω ID ≅ 4.1 A, VGEN = 10 V, Rg = 1 Ω 12 15 10 TC = 25 °C IS = 4.1 A, VGS = 0 V 0.8 15 IF = 4.1 A, dI/dt = 100 A/µs, TJ = 25 °C 8 8 7 15 20 30 20 10 20 25 15 6 15 1.2 30 20 ns Ω 12 5.5 nC pF Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb A V ns nC ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69088 S-83095-Rev. A, 29-Dec-08 New Product SiB406EDK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 10-2 10-3 I GSS - Gate Current (mA) I GSS - Gate Current (A) 3 10-4 10-5 TJ = 150 °C 10-6 10-7 10-8 10-9 TJ = 25 °C 2 IGSS at 25 °C 1 0 0 3 6 9 12 15 18 10-10 0 3 6 9 12 15 18 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 15 VGS = 5 thru 3 V VGS = 2.5 V 12 I D - Drain Current (A) I D - Drain Current (A) 4 5 Gate Current vs. Gate-Source Voltage TC = - 55 °C 3 9 6 VGS = 2 V 3 VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 TC = 25 °C 1 TC = 125 °C 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.12 500 Transfer Characteristics R DS(on) - On-Resistance (Ω) 400 0.09 C - Capacitance (pF) 300 Ciss VGS = 2.5 V 0.06 VGS = 4.5 V 0.03 200 Coss 100 Crss 0.00 0 3 6 9 12 15 0 0 2 4 6 8 10 12 14 16 18 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance Document Number: 69088 S-83095-Rev. A, 29-Dec-08 www.vishay.com 3 New Product SiB406EDK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 ID = 5.1 A VGS - Gate-to-Source Voltage (V) 8 R DS(on) - On-Resistance VDS = 10 V 6 VDS = 16 V 4 1.5 1.7 ID = 3.9 A 1.3 (Normalized) VGS = 4.5 V, 2.5 V 1.1 0.9 2 0.7 0 0 2 4 6 8 0.5 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 100 0.20 On-Resistance vs. Junction Temperature ID = 2 A R DS(on) - On-Resistance (Ω) 0.16 I S - Source Current (A) 10 0.12 TJ = 150 °C 1 TJ = 25 °C 0.08 TJ = 125 °C 0.04 TJ = 25 °C 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.3 1.2 1.1 VGS(th) (V) 1.0 0.9 0.8 0.7 0.6 - 50 5 ID = 250 µA 20 Power (W) On-Resistance vs. Gate-to-Source Voltage 30 25 15 10 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage Single Pulse Power (Junction-to-Ambient) www.vishay.com 4 Document Number: 69088 S-83095-Rev. A, 29-Dec-08 New Product SiB406EDK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Limited by RDS(on)* 10 I D - Drain Current (A) 100 µs 1 ms 10 ms 100 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 s, 10 s DC 1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 15 12 12 I D - Drain Current (A) Power Dissipation (W) 9 9 Package Limited 6 6 3 3 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69088 S-83095-Rev. A, 29-Dec-08 www.vishay.com 5 New Product SiB406EDK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) Notes: Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.02 0.05 Single Pulse 0.1 0.01 10-4 10-3 Square Wave Pulse Duration (s) 10 -2 10-1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69088. www.vishay.com 6 Document Number: 69088 S-83095-Rev. A, 29-Dec-08 Package Information Vishay Siliconix PowerPAK® SC75-6L PIN1 e b e b PIN2 PIN3 L PIN1 PIN2 PIN3 L D2 E1 E2 K4 E1 K D1 K E3 D1 D1 K PIN6 K3 PIN5 PIN4 K1 K2 PIN6 K2 PIN5 K1 PIN4 K2 BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL D A Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating E A1 C z Z DETAIL Z SINGLE PAD DIM Min A A1 b C D D1 D2 E E1 E2 E3 e K K1 K2 K3 K4 L T ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 06-Aug-07 0.15 0.675 0 0.18 0.15 1.53 0.57 0.10 1.53 1.00 0.20 0.32 MILLIMETERS Nom 0.75 0.25 0.20 1.60 0.67 0.20 1.60 1.10 0.25 0.37 0.50 BSC 0.180 TYP 0.275 TYP 0.200 TYP 0.255 TYP 0.300 TYP 0.25 0.35 0.006 Max 0.80 0.05 0.33 0.25 1.70 0.77 0.30 1.70 1.20 0.30 0.42 Min 0.027 0 0.007 0.006 0.060 0.022 0.004 0.060 0.039 0.008 0.013 INCHES Nom 0.030 0.010 0.008 0.063 0.026 0.008 0.063 0.043 0.010 0.015 0.020 BSC 0.007 TYP 0.011 TYP 0.008 TYP 0.010 TYP 0.012 TYP 0.010 0.014 0.15 0.03 0.25 0.08 Max 0.032 0.002 0.013 0.010 0.067 0.030 0.012 0.067 0.047 0.012 0.017 0.50 BSC 0.245 TYP 0.320 TYP 0.200 BSC 1.53 0.51 1.60 0.61 Min 0.675 0 0.18 0.15 1.53 0.34 MILLIMETERS Nom 0.75 0.25 0.20 1.60 0.44 E1 DUAL PAD INCHES Max 0.80 0.05 0.33 0.25 1.70 0.54 1.70 0.71 Min 0.027 0 0.007 0.006 0.060 0.013 0.060 0.020 Nom 0.030 0.010 0.008 0.063 0.017 0.063 0.024 Max 0.032 0.002 0.013 0.010 0.067 0.021 0.067 0.028 0.020 BSC 0.010 TYP 0.013 TYP 0.008 TYP 0.35 0.13 0.006 0.001 0.010 0.003 0.014 0.005 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single 1.250 (0.049) 0.250 (0.01) 0.250 (0.01) 0.400 (0.016) 0.500 (0.02) 0.300 (0.012) 0.180 (0.007) 0.370 (0.015) 1.700 (0.067) 1.100 (0.043) 0.620 (0.024) 2.000 (0.079) 0.200 (0.008) 0.300 (0.012) 0.300 (0.012) 1 0.545 (0.021) 0.250 (0.01) 0.670 (0.026) 2.000 (0.079) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70488 Revision: 21-Jan-08 www.vishay.com 13 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1