SIB406EDK-T1-GE3

SiB406EDK www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PowerPAK® SC-75-6L Single S 4 D 5 • TrenchFET® power MOSFET D 6 • New thermally enhanced PowerPAK® SC-75 package - Small footprint area - Low on-resistance • Typical ESD protection 560 V 6 1. S 7 m m 1 m m 1.6 Top View 3 G Bottom View 2 D 1 D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Marking code: AD PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 4.5 V RDS(on) max. (Ω) at VGS = 2.5 V Qg typ. (nC) ID (A) a Configuration D • Load switch for portable applications • High frequency converter 20 0.046 0.063 3.5 6 Single DC/DC G N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SC-75 SIB406EDK-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e Continuous source-drain diode current SYMBOL LIMIT VDS VGS 20 ± 12 6a 6a 5.1 b, c 4.1 b, c 15 6a 1.6 b, c 10 6.4 1.95 b, c 1.25 b, c -55 to +150 260 ID IDM IS PD TJ, Tstg UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b, f t≤5s RthJA 51 64 °C/W Maximum junction-to-case (drain) Steady state RthJC 10 12.5 Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 100 °C/W S21-0266-Rev. B, 22-Mar-2021 Document Number: 69088 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB406EDK www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 20 - - - V 23 - - -3.3 - Static Drain-source breakdown voltage VDS temperature coefficient ΔVDS/TJ VGS(th) temperature coefficient ΔVGS(th)/TJ Gate-source threshold voltage ID = 250 μA VGS(th) VDS = VGS , ID = 250 μA 0.6 - 1.4 Gate-source leakage IGSS VDS = 0 V, VGS = ± 12 V - - ±8 Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 20 V, VGS = 0 V - - -1 VDS = 20 V, VGS = 0 V, TJ = 55 °C - - -10 VDS ≥ 5 V, VGS = 4.5 V 10 - - VGS = 4.5 V, ID = 3.9 A - 0.037 0.046 VGS = 2.5 V, ID = 3.3 A - 0.051 0.063 VDS = 10 V, ID = 3.9 A - 14 - - 350 - mV/°C V μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 5.1 A VDS = 10 V, VGS = 4.5 V, ID = 5.1 A f = 1 MHz td(on) tr VDD = 10 V, RL = 2.4 Ω ID ≅ 4.1 A, VGEN = 4.5 V, Rg = 1 Ω - 63 - - 37 - - 7.5 12 - 3.5 5.5 - 0.95 - - 0.75 - - 3.5 - - 10 15 - 12 20 - 18 30 tf - 12 20 td(on) - 5 10 td(off) tr td(off) VDD = 10 V, RL = 2.4 Ω ID ≅ 4.1 A, VGEN = 10 V, Rg = 1 Ω tf pF nC Ω ns - 12 20 - 15 25 - 10 15 - - 6 - - 15 - 0.8 1.2 V - 15 30 ns - 8 20 nC - 8 - - 7 - Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 4.1 A, VGS = 0 V IF = 4.1 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0266-Rev. B, 22-Mar-2021 Document Number: 69088 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB406EDK www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 4 10-2 3 I GSS - Gate Current (A) I GSS - Gate Current (mA) 10-3 2 IGSS at 25 °C 1 10-4 10-5 TJ = 150 °C 10-6 10-7 TJ = 25 °C 10-8 10-9 10-10 0 0 3 6 9 12 15 18 0 3 6 9 12 15 18 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 15 5 VGS = 5 V thru 3 V VGS = 2.5 V 4 I D - Drain Current (A) I D - Drain Current (A) 12 9 6 VGS = 2 V 3 TC = - 55 °C 3 2 TC = 25 °C 1 TC = 125 °C VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 Transfer Characteristics Output Characteristics 0.12 500 Ciss 400 0.09 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.0 VGS - Gate-to-Source Voltage (V) VGS = 2.5 V 0.06 VGS = 4.5 V 300 200 Coss 0.03 100 Crss 0.00 0 0 3 6 9 12 15 ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage S21-0266-Rev. B, 22-Mar-2021 0 2 4 6 8 10 12 14 16 18 20 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 69088 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB406EDK www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 1.7 ID = 3.9 A 1.5 VDS = 10 V 6 VDS = 16 V 4 1.3 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 5.1 A 8 VGS = 4.5 V, 2.5 V 1.1 0.9 2 0.7 0 0 2 4 6 0.5 - 50 8 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Gate Charge 100 0.20 10 TJ = 150 °C TJ = 25 °C 1 0.16 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 2 A 0.12 0.08 TJ = 125 °C 0.04 TJ = 25 °C 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.3 30 1.2 25 ID = 250 µA 1.1 Power (W) VGS(th) (V) 20 1.0 0.9 10 0.8 5 0.7 0.6 - 50 15 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S21-0266-Rev. B, 22-Mar-2021 125 150 0 0.001 0.01 0.1 1 10 100 1000 Pulse (s) Single Pulse Power (Junction-to-Ambient) Document Number: 69088 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB406EDK www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms 1 s, 10 s DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 12 15 Power Dissipation (W) I D - Drain Current (A) 12 9 Package Limited 6 9 6 3 3 0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Current Derating a 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating Note c. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S21-0266-Rev. B, 22-Mar-2021 Document Number: 69088 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB406EDK www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10 -3 10-2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69088. S21-0266-Rev. B, 22-Mar-2021 Document Number: 69088 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 b e PIN3 PIN2 PIN1 PIN3 PIN6 K3 PIN5 E1 E1 K K D1 D1 D1 E3 E1 D2 K E2 K4 L PIN2 L PowerPAK® SC75-6L PIN6 K2 PIN4 K1 K2 BACKSIDE VIEW OF SINGLE PIN5 K1 PIN4 K2 BACKSIDE VIEW OF DUAL D A E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating C A1 Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 D1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021 D2 0.10 0.20 0.30 0.004 0.008 0.012 E 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 E1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028 E2 0.20 0.25 0.30 0.008 0.010 0.012 E3 0.32 0.37 0.42 0.013 0.015 0.017 e 0.50 BSC 0.020 BSC 0.50 BSC 0.020 BSC K 0.180 TYP 0.007 TYP 0.245 TYP 0.010 TYP K1 0.275 TYP 0.011 TYP 0.320 TYP 0.013 TYP K2 0.200 TYP 0.008 TYP 0.200 BSC 0.008 TYP K3 0.255 TYP 0.010 TYP K4 0.300 TYP L 0.15 0.25 0.012 TYP 0.35 T 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014 0.03 0.08 0.13 0.001 0.003 0.005 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single 1.250 (0.049) 0.250 (0.01) 0.500 (0.02) 0.250 (0.01) 0.400 (0.016) 0.300 (0.012) 0.180 (0.007) 0.370 (0.015) 1.700 (0.067) 1.100 0.620 (0.024) (0.043) 2.000 (0.079) 0.200 (0.008) 0.300 (0.012) 0.300 (0.012) 1 0.545 (0.021) 0.250 (0.01) 0.670 (0.026) 2.000 (0.079) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70488 Revision: 21-Jan-08 www.vishay.com 13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000