SIB417EDK-T1-GE3

SiB417EDK Vishay Siliconix P-Channel 1.2-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.058 at VGS = - 4.5 V - 9.0a 0.080 at VGS = - 2.5 V - 9.0a 0.100 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.250 at VGS = - 1.2 V - 0.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance • 100 % Rg Tested • Typical ESD Protection 900 V • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 7.3 nC PowerPAK SC-75-6L-Single S APPLICATIONS 1 D Marking Code • Load Switch for Portable Devices 2 D BGX 3 6 Part # code G D 5 1.60 mm Lot Traceability and Date code S D S G XXX 1.60 mm 4 D Ordering Information: SiB417EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e ID IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Limit -8 ±5 - 9a - 9a - 5.8b, c - 4.6b, c - 15 - 9a - 2b, c 13 8.4 2.4b, c 1.6b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t≤5s RthJA 41 51 Maximum Junction-to-Ambientb, f °C/W RthJC Maximum Junction-to-Case (Drain) Steady State 7.5 9.5 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 105 °C/W. Document Number: 68699 S09-1500-Rev. B, 10-Aug-09 www.vishay.com 1 SiB417EDK Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA -8 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 4.5 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C 2.1 - 0.35 -1 V ± 100 VDS = - 8 V, VGS = 0 V -1 VDS = - 8 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V RDS(on) V - 6.1 - 15 µA A VGS = - 4.5 V, ID = - 5.8 A 0.042 0.058 VGS = - 2.5 V, ID = - 5.0 A 0.058 0.080 VGS = - 1.8 V, ID = - 1.5 A 0.081 0.100 VGS = - 1.5 V, ID = - 0.75 A 0.096 0.130 VGS = - 1.2 V, ID = - 0.1 A 0.150 0.250 VDS = - 4 V, ID = - 5.8 A 11 VDS = - 4 V, VGS = 0 V, f = 1 MHz 215 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 565 pF 138 VDS = - 4 V, VGS = - 5 V, ID = - 5.8 A VDS = - 4 V, VGS = - 4.5 V, ID = - 5.8 A 8 12 7.3 11 0.95 nC 1.35 f = 1 MHz td(on) VDD = - 4 V, RL = 0.87 Ω ID ≅ - 4.6 A, VGEN = - 4.5 V, Rg = 1 Ω tr td(off) tf 1.9 9.5 19 12 18 31 46.5 30 45 17 26 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C -9 - 15 IS = - 4.6 A, VGS = 0 V - 0.8 - 1.2 A V Body Diode Reverse Recovery Time trr 32 48 ns Body Diode Reverse Recovery Charge Qrr 13 20 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 4.6 A, dI/dt = 100 A/µs, TJ = 25 °C 14 18 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68699 S09-1500-Rev. B, 10-Aug-09 SiB417EDK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 2.0 VGS = 5 V thru 2.5 V 1.6 VGS = 2 V I D - Drain Current (A) I D - Drain Current (A) 12 9 6 VGS = 1.5 V 3 1.2 TC = 25 °C 0.8 TC = 125 °C 0.4 TC = - 55 °C VGS = 1 V 0 0 1 2 3 4 0.0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 2.0 Transfer Characteristics 0.4 1000 800 0.3 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.2 VGS = 1.5 V VGS = 1.8 V VGS = 1.2 V 0.1 VGS = 2.5 V 0 3 Ciss 600 400 Coss 200 Crss VGS = 4.5 V 0.0 0 6 9 12 15 0 2 ID - Drain Current (A) 4 6 8 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.4 5 VGS = - 4.5 V, I D = - 5.8 A ID = 5.8 A 4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 1.0 VDS = 4 V 3 VDS = 6.4 V 2 1.2 VGS = - 2.5 V, I D = - 5 A 1.0 0.8 1 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68699 S09-1500-Rev. B, 10-Aug-09 8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 SiB417EDK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 100 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 5.8 A 10 TJ = 150 °C TJ = 25 °C 1 0.16 0.12 0.08 TJ = 125 °C 0.04 TJ = 25 °C 0.00 0.1 0.0 0.2 0.4 0.6 0.8 0 1.0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 5000 10 000 1000 4000 3000 I GSS (µA) I GSS (µA) 100 2000 IGSS at 150 °C 10 1 0.1 1000 0.01 IGSS at 25 °C 0 0 1 2 3 4 5 6 7 8 IGSS at 25 °C 0.001 0.1 1 10 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Source Voltage vs. Gate Current Gate Source Voltage vs. Gate Current 0.7 20 0.6 15 Power (W) VGS(th) (V) ID = 250 µA 0.5 0.4 5 0.3 0.2 - 50 www.vishay.com 4 10 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Document Number: 68699 S09-1500-Rev. B, 10-Aug-09 SiB417EDK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s DC 0.1 BVDSS Limited TA = 25 °C Single Pulse 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 15 16 12 9 Power (W) I D - Drain Current (A) 12 Package Limited 6 8 4 3 0 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 50 75 100 125 150 TC - Case Temperature (°C) Power Junction-to-Case Current Derating** 1.5 Power (W) 1.2 0.9 0.6 0.3 ** The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the 0.0 0 25 50 75 100 TA - Ambient Temperature (°C) Power Junction-to-Ambient Document Number: 68699 S09-1500-Rev. B, 10-Aug-09 125 150 upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 5 SiB417EDK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 80 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10 -2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68699. www.vishay.com 6 Document Number: 68699 S09-1500-Rev. B, 10-Aug-09 Package Information Vishay Siliconix b e PIN1 b e PIN3 PIN2 PIN1 PIN3 PIN6 K3 PIN5 E1 E1 K K D1 D1 D1 E3 E1 D2 K E2 K4 L PIN2 L PowerPAK® SC75-6L PIN6 K2 PIN4 K1 K2 BACKSIDE VIEW OF SINGLE PIN5 K1 PIN4 K2 BACKSIDE VIEW OF DUAL D A E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating C A1 Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 D1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021 D2 0.10 0.20 0.30 0.004 0.008 0.012 E 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 E1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028 E2 0.20 0.25 0.30 0.008 0.010 0.012 E3 0.32 0.37 0.42 0.013 0.015 0.017 e 0.50 BSC 0.020 BSC 0.50 BSC 0.020 BSC K 0.180 TYP 0.007 TYP 0.245 TYP 0.010 TYP K1 0.275 TYP 0.011 TYP 0.320 TYP 0.013 TYP K2 0.200 TYP 0.008 TYP 0.200 BSC 0.008 TYP K3 0.255 TYP 0.010 TYP K4 0.300 TYP L 0.15 0.25 0.012 TYP 0.35 T 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014 0.03 0.08 0.13 0.001 0.003 0.005 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single 1.250 (0.049) 0.250 (0.01) 0.500 (0.02) 0.250 (0.01) 0.400 (0.016) 0.300 (0.012) 0.180 (0.007) 0.370 (0.015) 1.700 (0.067) 1.100 0.620 (0.024) (0.043) 2.000 (0.079) 0.200 (0.008) 0.300 (0.012) 0.300 (0.012) 1 0.545 (0.021) 0.250 (0.01) 0.670 (0.026) 2.000 (0.079) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70488 Revision: 21-Jan-08 www.vishay.com 13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2021 1 Document Number: 91000