New Product
SiB457EDK
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) 0.035 at VGS = - 4.5 V - 20 0.049 at VGS = - 2.5 V 0.072 at VGS = - 1.8 V 0.130 at VGS = - 1.5 V ID (A) - 9a - 9a - 9a -2 13 nC Qg (Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance • 100 % Rg Tested • Typical ESD Performance: 2500 V • Built in ESD Protection with Zener Diode • Compliant to RoHS Directive 2002/95/EC
PowerPAK SC-75-6L-Single
S
1 D 2 D 3 6 D 5 D S 4 S 1.60 mm G
APPLICATIONS
Marking Code
BJX Part # code XXX Lot Traceability and Date code
D
• Load Switch for Portable Devices • Load Switch for Charging Circuits
G R
1.60 mm
Ordering Information: SiB457EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 20 ±8 - 9a - 9a - 6.8b, c - 5.5b, c - 25 - 9a - 2b, c 13 8.4 2.4b, c 1.6b, c - 55 to 150 260 Unit V
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current
A
Maximum Power Dissipation
PD TJ, Tstg
W
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 41 7.5 Maximum 51 9.5 Unit °C/W
Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 105 °C/W. Document Number: 64816 S09-1497-Rev. B, 10-Aug-09 www.vishay.com 1
New Product
SiB457EDK
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 8 V VDS = 0 V, VGS = ± 4.5 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55 °C VDS ≤ - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 4.8 A Drain-Source On-State Resistancea RDS(on) VGS = - 2.5 V, ID = - 4.0 A VGS = - 1.8 V, ID = - 3.3 A VGS = - 1.5 V, ID = - 1.5 A Forward Transconductance Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage IS ISM VSD IS = - 5.5 A, VGS = 0 V - 0.85 TC = 25 °C -9 - 25 - 1.2 A V Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = - 10 V, RL = 1.8 Ω ID ≅ - 5.5 A, VGEN = - 8 V, Rg = 1 Ω VDD = - 10 V, RL = 1.8 Ω ID ≅ - 5.5 A, VGEN = - 4.5 V, Rg = 1 Ω f = 1 MHz 0.28 VDS = - 10 V, VGS = - 8 V, ID = - 6.8 A VDS = - 10 V, VGS = - 4.5 V, ID = - 6.8 A 22 13 1.2 3 1.4 0.34 0.90 3.00 1.90 0.17 0.45 5.5 2.00 2.8 0.51 1.35 4.50 2.90 0.26 0.70 8.30 3.50 us kΩ 44 26 nC
a
Symbol
Test Conditions
Min. - 20
Typ.
Max.
Unit V
- 12 2.5 - 0.4 -1 ±5 ± 0.5 -1 - 10 - 15 0.029 0.040 0.060 0.085 16 0.035 0.049 0.072 0.130
mV/°C V
µA
A
Ω
gfs
VDS = - 10 V, ID = - 4.8 A
S
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 64816 S09-1497-Rev. B, 10-Aug-09
New Product
SiB457EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS
0.8
25 °C, unless otherwise noted
10-2 10-3
I GSS - Gate Current (mA)
I GSS - Gate Current (A)
0.6
10-4 10-5 10-6 10-7 10-8 10-9 10-10 TJ = 150 °C
0.4 TJ = 25 °C 0.2
TJ = 25 °C
0.0 0 3 6 9 12 15
10-11 0 3 6 9 12 15
VGS - Gate-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
25 VGS = 5 V thru 2.5 V 8 VGS = 2 V I D - Drain Current (A) 10
Gate Current vs. Gate-Source Voltage
20 I D - Drain Current (A)
15
6
10 VGS = 1.5 V 5 VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
4 TC = 25 °C 2 TC = 125 °C 0 0.0 TC = - 55 °C 0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.20 VGS = 1.5 V R DS(on) - On-Resistance (Ω) R DS(on) - On-Resistance 0.15 VGS = 1.8 V 0.10 1.5 1.4 1.3 (Normalized) 1.2 1.1 1.0 0.9 0.8 VGS = 4.5 V 0.00 0 5 10 15 20 25 0.7 - 50 - 25
Transfer Characteristics
VGS = 4.5 V, 2.5 V; ID = 4.8 A VGS = 1.8 V; ID = 4.8 A
VGS = 1.5 V; ID = 1.5 A
0.05
VGS = 2.5 V
0
25
50
75
100
125
150
ID - Drain Current (A)
TJ - Junction Temperature (°C)
On-Resistance vs. Drain Current
On-Resistance vs. Junction Temperature
Document Number: 64816 S09-1497-Rev. B, 10-Aug-09
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New Product
SiB457EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8 ID = 6.8 A VGS - Gate-to-Source Voltage (V) 6 VDS = 5 V VDS = 10 V 4 VDS = 16 V R DS(on) - On-Resistance (Ω) 0.12 0.15
0.09
ID = 1.5 A; TJ = 125 °C ID = 4.8 A; TJ = 125 °C ID = 4.8 A; TJ = 25 °C ID = 1.5 A; TJ = 25 °C
0.06
2
0.03
0 0 5 10 15 20 25
0.00 0 1 2 3 4 5
Qg - Total Gate Charge (nC)
VGS - Gate-to-Source Voltage (V)
Gate Charge
100
20
On-Resistance vs. Gate-to-Source Voltage
I S - Source Current (A)
TJ = 150 °C 10
Power (W)
15
10
TJ = 25 °C 1
5
0.1 0.0
0.3
0.6
0.9
1.2
0 0.001
0.01
0.1
1 Pulse (s)
10
100
1000
VSD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.8 100
Single Pulse Power, Junction-to-Ambient
Limited by RDS(on)* 0.7 I D - Drain Current (A) ID = 250 µA 0.6 VGS(th) (V) 10 100 µs 1 TA = 25 °C Single Pulse 0.1 0.3 BVDSS Limited 0.2 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1 ms 10 ms 100 ms 1 s, 10 s DC
0.5
0.4
TJ - Temperature (°C)
Threshold Voltage
VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 64816 S09-1497-Rev. B, 10-Aug-09
New Product
SiB457EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
15
16 I D - Drain Current (A)
12
Power (W)
12 Package Limited 8
9
6
4
3
0 0 25 50 75 100 125 150
0 25 50 75 100 125 150
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 64816 S09-1497-Rev. B, 10-Aug-09
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New Product
SiB457EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 105 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted
Single Pulse
0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.05 0.02 Single Pulse
0.1 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64816.
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Document Number: 64816 S09-1497-Rev. B, 10-Aug-09
Package Information
Vishay Siliconix
PowerPAK® SC75-6L
PIN1
e b e b
PIN2
PIN3 L
PIN1
PIN2
PIN3 L
D2 E1
E2 K4
E1
K
D1
K
E3
D1
D1
K
PIN6 K3
PIN5
PIN4 K1 K2
PIN6 K2
PIN5 K1
PIN4 K2
BACKSIDE VIEW OF SINGLE
BACKSIDE VIEW OF DUAL
D
A
Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating
E
A1 C
z
Z
DETAIL Z
SINGLE PAD DIM Min A A1 b C D D1 D2 E E1 E2 E3 e K K1 K2 K3 K4 L T ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 06-Aug-07 0.15 0.675 0 0.18 0.15 1.53 0.57 0.10 1.53 1.00 0.20 0.32 MILLIMETERS Nom 0.75 0.25 0.20 1.60 0.67 0.20 1.60 1.10 0.25 0.37 0.50 BSC 0.180 TYP 0.275 TYP 0.200 TYP 0.255 TYP 0.300 TYP 0.25 0.35 0.006 Max 0.80 0.05 0.33 0.25 1.70 0.77 0.30 1.70 1.20 0.30 0.42 Min 0.027 0 0.007 0.006 0.060 0.022 0.004 0.060 0.039 0.008 0.013 INCHES Nom 0.030 0.010 0.008 0.063 0.026 0.008 0.063 0.043 0.010 0.015 0.020 BSC 0.007 TYP 0.011 TYP 0.008 TYP 0.010 TYP 0.012 TYP 0.010 0.014 0.15 0.03 0.25 0.08 Max 0.032 0.002 0.013 0.010 0.067 0.030 0.012 0.067 0.047 0.012 0.017 0.50 BSC 0.245 TYP 0.320 TYP 0.200 BSC 1.53 0.51 1.60 0.61 Min 0.675 0 0.18 0.15 1.53 0.34 MILLIMETERS Nom 0.75 0.25 0.20 1.60 0.44
E1
DUAL PAD INCHES Max 0.80 0.05 0.33 0.25 1.70 0.54 1.70 0.71 Min 0.027 0 0.007 0.006 0.060 0.013 0.060 0.020 Nom 0.030 0.010 0.008 0.063 0.017 0.063 0.024 Max 0.032 0.002 0.013 0.010 0.067 0.021 0.067 0.028
0.020 BSC 0.010 TYP 0.013 TYP 0.008 TYP
0.35 0.13
0.006 0.001
0.010 0.003
0.014 0.005
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Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single
1.250 (0.049) 0.250 (0.01) 0.250 (0.01) 0.400 (0.016) 0.500 (0.02)
0.300 (0.012) 0.180 (0.007) 0.370 (0.015)
1.700 (0.067)
1.100
(0.043)
0.620 (0.024)
2.000 (0.079)
0.200 (0.008) 0.300 (0.012)
0.300 (0.012)
1
0.545 (0.021) 0.250 (0.01) 0.670 (0.026) 2.000 (0.079) Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70488 Revision: 21-Jan-08
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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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