SiHD7N60E
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Vishay Siliconix
E Series Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V) at TJ max.
•
•
•
•
•
•
650
RDS(on) max. at 25 °C (Ω)
VGS = 10 V
Qg max. (nC)
0.6
40
Qgs (nC)
5
Qgd (nC)
9
Configuration
Single
Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
•
•
•
•
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
D
DPAK
(TO-252)
D
G
G
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
DPAK (TO-252)
SiHD7N60E-GE3
SiHD7N60ET1-GE3
Lead (Pb)-free and Halogen-free
SiHD7N60ET5-GE3
SiHD7N60ET4-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
SYMBOL
TC = -25 °C, ID = 250 μA
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Current a
ID
IDM
Linear Derating Factor
LIMIT
UNIT
600
575
V
± 30
7
5
A
18
0.63
W/°C
Single Pulse Avalanche Energy b
EAS
43
mJ
Maximum Power Dissipation
PD
78
W
TJ, Tstg
-55 to +150
°C
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
TJ = 125 °C
Reverse Diode dV/dt d
Soldering Recommendations (Peak Temperature) c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 13.8 mH, Rg = 25 Ω, IAS = 2.5 A.
c. 1.6 mm from case.
d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S15-0291-Rev. D, 23-Feb-15
dV/dt
3
300
V/ns
°C
Document Number: 91510
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHD7N60E
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Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Maximum Junction-to-Case (Drain)
RthJC
-
1.6
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
609
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.68
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
V
VGS = ± 20 V
-
-
± 100
nA
VGS = ± 30 V
-
-
±1
μA
VDS = 600 V, VGS = 0 V
-
-
1
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
10
-
0.5
0.6
Ω
S
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IGSS
IDSS
RDS(on)
VGS = 10 V
ID = 3.5 A
gfs
VDS = 50 V, ID = 3.5 A
-
1.9
-
Input Capacitance
Ciss
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
-
680
-
-
39
-
-
5
-
-
34
-
-
100
-
-
20
40
-
5
-
-
9
-
μA
Dynamic
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Effective Output Capacitance, Energy
Related a
Co(er)
Effective Output Capacitance, Time
Related b
Co(tr)
pF
VDS = 0 V to 480 V, VGS = 0 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Gate Input Resistance
Rg
VGS = 10 V
ID = 3.5 A, VDS = 480 V
nC
-
13
26
-
13
26
-
24
48
-
14
28
-
1.1
-
-
-
7
-
-
18
TJ = 25 °C, IS = 3.5 A, VGS = 0 V
-
-
1.2
-
230
-
ns
TJ = 25 °C, IF = IS = 3.5 A,
dI/dt = 100 A/μs, VR = 20 V
-
1.9
-
μC
-
14
-
A
VDD = 480 V, ID = 3.5 A,
VGS = 10 V, Rg = 9.1 Ω
f = 1 MHz, open drain
ns
Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Reverse Recovery Current
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
V
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
S15-0291-Rev. D, 23-Feb-15
Document Number: 91510
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHD7N60E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
16
12
3
TJ = 25 °C
ID = 3.5 A
RDS(on), Drain-to-Source
On Resistance (Normalized)
8
4
5
10
15
20
25
30
VGS = 10 V
1
0.5
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
10 000
TJ = 150 °C
Capacitance (pF)
ID, Drain-to-Source Current (A)
1.5
VDS, Drain-to-Source Voltage (V)
12
9
2
0
- 60 - 40 - 20 0
0
0
2.5
6
3
Ciss
1000
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Coss
100
Crss
10
1
0
0
5
10
15
20
25
30
0
VDS, Drain-to-Source Voltage (V)
100
200
300
400
500
600
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 2 - Typical Output Characteristics
6
TJ = 25 °C
16
5
500
4
12
Coss (pF)
ID, Drain-to-Source Current (A)
20
TJ = 150 °C
8
Coss
3
Eoss
50
Eoss (μJ)
ID, Drain-to-Source Current (A)
20
2
4
1
0
5
0
5
10
15
20
25
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S15-0291-Rev. D, 23-Feb-15
0
0
100
200
300
400
500
600
VDS
Fig. 6 - Coss and Eoss vs. VDS
Document Number: 91510
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHD7N60E
www.vishay.com
Vishay Siliconix
8
VDS = 480 V
VDS = 300 V
VDS = 120 V
20
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
24
16
12
8
6
4
2
4
0
0
0
10
20
30
25
40
Qg, Total Gate Charge (nC)
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 10 - Maximum Drain Current vs. Case Temperature
750
725
TJ = 150 °C
VDS, Drain-to-Source
Breakdown Voltage (V)
ISD, Reverse Drain Current (A)
100
TJ = 25 °C
10
1
700
675
650
625
600
575
550
VGS = 0 V
525
- 60 - 40 - 20 0
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
VSD, Source-Drain Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
100
Operation in this Area
Limited by RDS(on)
Fig. 11 - Temperature vs. Drain-to-Source Voltage
IDM = Limited
ID, Drain Current (A)
10
100 μs
1
Limited by RSD (on)*
1 ms
0.1
TC = 25 °C
TJ = 150 °C
Single Pulse
0.01
1
10 ms
BVDSS Limited
10
100
1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 9 - Maximum Safe Operating Area
S15-0291-Rev. D, 23-Feb-15
Document Number: 91510
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHD7N60E
Normalized Effective Transient
Thermal Impedance
www.vishay.com
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
RD
V DS
V DS
tp
V GS
V DD
D.U.T.
RG
+
- V DD
V DS
10 V
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
IAS
Fig. 13 - Switching Time Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
V DS
QG
10 V
90 %
QGS
QGD
VG
10 %
V GS
td(on)
td(off)
tr
tf
Charge
Fig. 14 - Switching Time Waveforms
Fig. 17 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
L
Vary t p to obtain
required IAS
VDS
50 kΩ
D.U.T.
RG
+
-
I AS
12 V
0.2 μF
0.3 μF
V DD
+
D.U.T.
-
VDS
10 V
tp
0.01 Ω
VGS
3 mA
Fig. 15 - Unclamped Inductive Test Circuit
IG
ID
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
S15-0291-Rev. D, 23-Feb-15
Document Number: 91510
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHD7N60E
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 19 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91510.
S15-0291-Rev. D, 23-Feb-15
Document Number: 91510
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-252AA Case Outline
VERSION 1: FACILITY CODE = Y
E
A
C2
H
D
D1
L3
b3
e
b2
e1
L
gage plane height (0.5 mm)
L4
b
L5
E1
C
A1
MILLIMETERS
DIM.
MIN.
A
2.18
MAX.
2.38
A1
-
0.127
b
0.64
0.88
b2
0.76
1.14
b3
4.95
5.46
C
0.46
0.61
C2
0.46
0.89
D
5.97
6.22
D1
4.10
-
E
6.35
6.73
E1
4.32
-
H
9.40
10.41
e
2.28 BSC
e1
4.56 BSC
L
1.40
1.78
L3
0.89
1.27
L4
-
1.02
L5
1.01
1.52
Note
• Dimension L3 is for reference only
Revision: 16-Dec-2019
Document Number: 71197
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
VERSION 2: FACILITY CODE = N
E
e
A
b3
E1
E1/2
c2
θ
e
L4
L5
L6
H
D
L3
D1
θ
0.25
(3°)
DETAIL "B"
C A B
(3°)
DETAIL "B"
A1
C
L
(L1)
b1
SEATING
C
PLANE
θ
L2
GAUGE
PLANE
H
C
(b)
c1
3x b
2x e
c
2x b2
MILLIMETERS
MILLIMETERS
DIM.
A
MIN.
2.18
MAX.
DIM.
MIN.
2.39
L
1.50
A1
-
0.13
L1
b
0.65
0.89
L2
MAX.
1.78
2.74 ref.
0.51 BSC
b1
0.64
0.79
L3
b2
0.76
1.13
L4
-
1.02
b3
4.95
5.46
L5
1.14
1.49
c
0.46
0.61
L6
0.65
0.85
c1
0.41
0.56
0°
10°
1
0°
15°
2
25°
35°
c2
0.46
0.60
D
5.97
6.22
D1
5.21
-
E
6.35
6.73
E1
4.32
e
H
2.29 BSC
9.94
0.89
1.27
Notes
• Dimensioning and tolerance confirm to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
• Heat sink side flash is max. 0.8 mm
• Radius on terminal is optional
10.34
ECN: E19-0649-Rev. Q, 16-Dec-2019
DWG: 5347
Revision: 16-Dec-2019
Document Number: 71197
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-252AA (HIGH VOLTAGE)
E
b3
E1
L3
D1
D
H
L4
b2
b
A
c2
e
A1
L1
L
c
θ
L2
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
E
6.40
6.73
0.252
0.265
L
1.40
1.77
0.055
L1
2.743 REF
L2
0.070
0.108 REF
0.508 BSC
0.020 BSC
L3
0.89
1.27
0.035
0.050
L4
0.64
1.01
0.025
0.040
D
6.00
6.22
0.236
0.245
H
9.40
10.40
0.370
0.409
b
0.64
0.88
0.025
0.035
b2
0.77
1.14
0.030
0.045
b3
5.21
5.46
0.205
e
2.286 BSC
0.215
0.090 BSC
A
2.20
2.38
0.087
A1
0.00
0.13
0.000
0.094
0.005
c
0.45
0.60
0.018
0.024
c2
0.45
0.58
0.018
0.023
D1
5.30
-
0.209
-
E1
4.40
-
0.173
-
θ
0'
10'
0'
10'
ECN: S-81965-Rev. A, 15-Sep-08
DWG: 5973
Notes
1. Package body sizes exclude mold flash, protrusion or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side.
2. Package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, gate burrs and interlead flash, but
including any mismatch between the top and bottom of the plastic body.
3. The package top may be smaller than the package bottom.
4. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimension at maximum
material condition. The dambar cannot be located on the lower radius of the foot.
Document Number: 91344
Revision: 15-Sep-08
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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3
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
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Revision: 09-Jul-2021
1
Document Number: 91000
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