SIHK125N60EF-T1GE3

SiHK125N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET With Fast Body Diode FEATURES • 4th generation E series technology Drain tab • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses Gate pin 1 • Avalanche energy rated (UIS) Driver source pin 2 Source pin 3 to 8 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 N-Channel MOSFET APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C • Power factor correction power supplies (PFC) 650 VGS = 10 V • Lighting 0.109 Qg max. (nC) 45 - High-intensity discharge (HID) Qgs (nC) 13 - Fluorescent ballast lighting Qgd (nC) 7 Configuration • Industrial Single - Welding - Induction heating - Motor drives - Battery chargers - Solar (PV inverters) ORDERING INFORMATION Package PowerPAK 10 x 12 Lead (Pb)-free and halogen-free SIHK125N60EF-T1GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 600 Gate-source voltage VGS ± 30 Continuous drain current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed drain current a ID IDM Linear derating factor UNIT V 21 13 A 54 1.05 W/°C Single pulse avalanche energy b EAS 127 mJ Maximum power dissipation PD 132 W TJ, Tstg -55 to +150 °C Operating junction and storage temperature range Drain-source voltage slope TJ = 125 °C Reverse diode dv/dt d dv/dt 100 50 V/ns Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 3.0 A c. 1.6 mm from case d. ISD  ID, di/dt = 100 A/μs, starting TJ = 25 °C S22-0546-Rev. A, 27-Jun-2022 Document Number: 92439 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHK125N60EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 50 c Maximum junction-to-case (drain) RthJC - 0.95 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage (N) VDS VGS = 0 V, ID = 250 μA 600 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.62 - V/°C VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ±1 μA Gate-source leakage IGSS Zero gate voltage drain current IDSS VDS = 480 V, VGS = 0 V - - 1 μA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 2 mA - 0.109 0.125  gfs VDS = 10 V, ID = 12 A - 2.4 - S Input capacitance Ciss 1863 - Coss - 69 - Reverse transfer capacitance Crss VGS = 0 V, VDS = 100 V, f = 100 kHz - Output capacitance - 1 - Effective output capacitance, energy related Co(er) - 75 - Effective output capacitance, time  related Co(tr) - 422 - - 30 45 - 13 - Drain-source on-state resistance Forward transconductance RDS(on) VGS = 10 V ID = 12 A Dynamic pF VDS = 0 V to 400 V, VGS = 0 V Total gate charge Qg Gate-source charge Qgs VGS = 10 V ID = 12 A, VDS = 480 V Gate-drain charge Qgd - 7 - Turn-on delay time td(on) - 20 40 VDD = 480 V, ID = 12 A, VGS = 10 V, Rg = 9.1  - 27 54 - 32 64 - 18 36 f = 1 MHz 0.4 0.8 1.6 - - 21 - - 54 Rise time Turn-off delay time tr td(off) Fall time tf Gate input resistance Rg nC ns  Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current ISM Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery current IRRM MOSFET symbol showing the  integral reverse p - n junction diode D A G TJ = 25 °C, IS = 12 A, VGS = 0 V TJ = 25 °C, IF = IS = 12 A, di/dt = 100 A/μs, VR = 400 V S - - 1.2 V - 100 200 ns - 0.5 1.0 μC - 13 - A Notes a. When mounted on 1" x 1" FR4 board S22-0546-Rev. A, 27-Jun-2022 Document Number: 92439 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHK125N60EF www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 3.0 8V 1000 30 7V 100 15 6V 0 0 5 10 5V 15 10 10000 ID = 12 A 2.5 2.0 1000 1.5 VGS = 10 V 1.0 100 0.5 10 0 20 -60 -40 -20 0 20 40 60 80 100 120 140 160 VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Axis Title Axis Title 10000 15 V 14 V 13 V 12 V 11 V 10 V TJ = 150 °C 10 000 Ciss 8V 1000 7V 24 100 6V 12 2nd line C - Capacitance (pF) 36 10000 100 000 1st line 2nd line 2nd line ID - Drain-to-Source Current (A) 48 VGS = 0 V, f = 100 kHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd 1000 1000 100 1st line 2nd line 45 9V 1st line 2nd line TJ = 25 °C 15 V 14 V 13 V 12 V 11 V 10 V RDS(on) - Drain-to-Source On-Resistance (Normalized) 10000 1st line 2nd line 2nd line ID - Drain-to-Source Current (A) 60 Coss 100 10 Crss 1 5V 10 0 5 10 15 10 0.1 20 0 100 200 500 600 VDS - Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Axis Title Axis Title 100 000 TJ = 25 °C 60 1000 40 TJ = 150 °C 100 20 VDS = 8.5 V 10 0 5 10 15 20 2nCoss - Output Capacitance (pF) 10000 1st line 2nd line 2nd line ID - Drain-to-Source Current (A) 400 VDS - Drain-to-Source Voltage (V) 80 0 300 12 10 10 000 8 Eoss Coss 1000 6 4 100 2 0 10 0 100 200 300 400 500 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 6 - Coss and Eoss vs. VDS S22-0546-Rev. A, 27-Jun-2022 Eoss - Output Capacitance Stored Energy (µJ) 2nd line 0 600 Document Number: 92439 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHK125N60EF www.vishay.com Vishay Siliconix Axis Title Axis Title 10000 VDS = 480 V VDS = 300 V VDS = 120 V 20 6 100 3 1000 15 1st line 2nd line 1000 2nd line ID - Drain Current (A) 9 10000 25 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 12 10 100 5 0 8 16 24 10 0 10 0 32 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TC - Case Temperature (°C) Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 10 - Maximum Drain Current vs. Case Temperature Axis Title 1000 TJ = 25 °C 10 100 VGS = 0 V 10 1 0.2 0.4 0.6 0.8 1.0 1.2 1.2 10000 1.1 1000 1st line 2nd line TJ = 150 °C 1st line 2nd line 2nd line ISD - Reverse Drain Current (A) 10000 VDS - Drain-to-Source Breakdown Voltage (V) (Normalized) Axis Title 100 1.0 100 0.9 ID = 30 mA 10 0.8 -60 -40 -20 0 1.4 20 40 60 80 100 120 140 160 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) Fig. 8 - Typical Source-Drain Diode Forward Voltage Fig. 11 - Temperature vs. Drain-to-Source Voltage Axis Title 10000 1000 Operation in this area limited by RDS(on) IDM limited 1000 Limited by RDS(on) a 10 BVDSS limited 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 100 µs 0.1 TC = 25 °C, TJ = 150 °C, single pulse 1 ms 10 ms 0.01 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) Fig. 9 - Maximum Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S22-0546-Rev. A, 27-Jun-2022 Document Number: 92439 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHK125N60EF www.vishay.com Vishay Siliconix Axis Title 1 10000 0.2 1000 0.1 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.05 0.02 100 Single pulse 10 0.01 0.0001 0.001 0.01 0.1 1 Pulse Time (s) Fig. 12 - Normalized Transient Thermal Impedance, Junction-to-Case RD VDS VDS tp VGS D.U.T. VDD Rg + - VDD VDS 10 V Pulse width ≤ 1 μs Duty factor ≤ 0.1 % IAS Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms VDS Qg 10 V 90 % Qgs 10 % VGS Qgd VG td(on) td(off) tr tf Charge Fig. 14 - Switching Time Waveforms Fig. 17 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. L VDS Vary tp to obtain required IAS 50 kΩ D.U.T. Rg 12 V 0.2 μF 0.3 μF + - VDD + D.U.T. IAS - VDS 10 V tp 0.01 Ω VGS 3 mA Fig. 15 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S22-0546-Rev. A, 27-Jun-2022 Document Number: 92439 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHK125N60EF www.vishay.com Vishay Siliconix Peak Diode Recovery dv/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer 3 + 2 - - 4 + 1 Rg • • • • 1 Driver gate drive Period P.W. + V - DD dv/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test D= P.W. Period V GS = 10 V a 2 D.U.T. ISD waveform Reverse recovery current 3 D.U.T. VDS Body diode forward current di/dt waveform Diode recovery dv/dt Re-applied voltage V DD Body diode forward drop 4 Inductor current Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?92439. S22-0546-Rev. A, 27-Jun-2022 Document Number: 92439 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Land Pattern PowerPAK® 10 x 12 (TOLL) (High Voltage) 9.90 4.30 2x 1.30 3x 0.85 1.40 6.18 12.88 8.20 3.05 0.55 2.25 1.20 7x 1 2 pitch 0.90 8x Note • Dimensions in mm ECN: S22-1061-Rev. C, 26-Dec-2022 DWG: 3013 Revision: 26-Dec-2022 Document Number: 92489 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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