SIJA58ADP-T1-GE3

SiJA58ADP www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PowerPAK® SO-8L Single • TrenchFET® Gen IV power MOSFET • Very low Qg and Qoss reduce power loss and improve efficiency D 6. 15 m m m 1 13 m 4 G 5. Top View 3 S 2 S 1 S • 100 % Rg and UIS tested • Qgd/Qgs ratio < 1 optimizes switching characteristics • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration • Flexible leads provide resilience to mechanical stress APPLICATIONS 40 0.00265 0.00395 18.5 109 Single D • Synchronous rectification • High power density DC/DC G • DC/AC inverters N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8L SiJA58ADP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TJ, Tstg LIMIT 40 +20, -16 109 87.3 32.3 b, c 25.9 b, c 150 51.6 4.5 b, c 30 45 56.8 36.3 5 b, c 3.2 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b, f t  10 s RthJA 20 25 °C/W 1.7 2.2 Maximum junction-to-case (drain) Steady state RthJC Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 70 °C/W S18-0946-Rev. A, 17-Sep-2018 Document Number: 76918 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJA58ADP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 40 - - V - 25 - - -6 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = 250 μA mV/°C VGS(th) VDS = VGS, ID = 250 μA 1.1 - 2.4 V Gate-source leakage IGSS VDS = 0 V, VGS = +20, -16 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 40 V, VGS = 0 V - - 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C - - 10 VDS  5 V, VGS = 10 V 30 - - VGS = 10 V, ID = 15 A - 0.00220 0.00265 VGS = 4.5 V, ID = 10 A - 0.00330 0.00395 VDS = 10 V, ID = 15 A - 80 - μA A  S Dynamic b Input capacitance Ciss - 3030 - Output capacitance Coss - 550 - Reverse transfer capacitance Crss - 52 - - 0.018 0.036 - 40.5 61 - 18.5 28 - 9.3 - - 2.8 - VDS = 20 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio Total gate charge Qg VDS = 20 V, VGS = 10 V, ID = 10 A VDS = 20 V, VGS = 4.5 V, ID = 10 A Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 20 V, VGS = 0 V - 21.5 - Gate resistance Rg f = 1 MHz 0.5 1.4 2.5 - 13 26 - 5 10 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  pF nC  - 30 60 tf - 5 10 td(on) - 28 56 - 60 120 - 30 60 - 10 20 - - 51.6 - - 150 - 0.73 1.1 V - 29 58 ns - 17 34 nC - 14 - - 15 - tr td(off) VDD = 20 V, RL = 2  ID  10 A, VGEN = 4.5 V, Rg = 1  tf ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current (tp = 100 μs) ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 5 A IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0946-Rev. A, 17-Sep-2018 Document Number: 76918 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJA58ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 200 VGS = 10 V thru 4 V 160 2nd line ID - Drain Current (A) 2nd line ID - Drain Current (A) 160 120 80 VGS = 3 V 120 TC = 25 °C 80 TC = 125 °C 40 40 TC = -55 °C VGS = 2 V 0 0 1 2 3 4 0 0 5 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 6 Axis Title Axis Title 0.005 10 000 10000 10000 0.003 0.002 100 VGS = 10 V Coss 1000 1000 1st line 2nd line 1000 2nd line C - Capacitance (pF) VGS = 4.5 V 0.004 1st line 2nd line Crss 100 100 0.001 0 10 10 0 20 40 60 80 10 0 100 8 16 VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance 2.0 ID = 10 A 8 1000 1st line 2nd line 6 VDS = 10 V, 20 V, 30 V 100 2 0 10 8 16 24 32 40 2nd line RDS(on) - On-Resistance (Normalized) 10000 4 40 Axis Title Axis Title 2nd line VGS - Gate-to-Source Voltage (V) 32 ID - Drain Current (A) 2nd line 10 0 24 10000 1.7 VGS = 10 V, ID = 15 A 1000 1.4 1.1 VGS = 4.5 V, ID = 15 A 100 0.8 0.5 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S18-0946-Rev. A, 17-Sep-2018 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) Ciss Document Number: 76918 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJA58ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 1000 TJ = 150 °C 1 TJ = 25 °C 100 0.1 0.01 0.2 0.4 0.6 0.8 ID = 15 A 0.008 1000 0.006 TJ = 150 °C 0.004 100 0.002 TJ = 25 °C 0 10 0 10000 10 1 1.0 3 5 7 9 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 0.5 10000 500 10000 400 0.2 1000 2nd line Power (W) 1000 ID = 5 mA -0.4 300 1st line 2nd line -0.1 1st line 2nd line 2nd line VGS(th) - Variance (V) 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10 1st line 2nd line 2nd line IS - Source Current (A) 0.010 10000 100 200 100 -0.7 100 ID = 250 μA 100 -1.0 10 -50 -25 0 25 50 75 0 0.001 100 125 150 10 0.01 0.1 1 10 TJ - Temperature (°C) 2nd line Time (s) 2nd line Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 100 100 μs ID limited 1000 10 1 ms Limited by RDS(on) (1) 1 1st line 2nd line 2nd line ID - Drain Current (A) 10000 IDM limited 10 ms 100 ms100 1s 0.1 10 s TA = 25 °C Single pulse 0.01 0.01 (1) DC BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S18-0946-Rev. A, 17-Sep-2018 Document Number: 76918 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJA58ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 120 10000 1000 72 1st line 2nd line 2nd line ID - Drain Current (A) 96 48 100 24 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title Axis Title 70 10000 2.5 56 10000 2 1.5 1st line 2nd line 28 2nd line Power (W) 1000 1st line 2nd line 2nd line Power (W) 1000 42 1 100 14 100 0.5 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TA - Ambient Temperature (°C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-0946-Rev. A, 17-Sep-2018 Document Number: 76918 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJA58ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty Cycle = 0.5 Notes: 0.2 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 PDM 0.1 0.1 t1 t2 t 1. Duty cycle, D = 1 t2 2. Per unit base = RthJA = 70 °C/W 0.05 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 0.01 100 (t) 4. Surface mounted 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 1000 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.05 0.1 0.02 100 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76918. S18-0946-Rev. A, 17-Sep-2018 Document Number: 76918 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 1 W E1 E E2 W2 W3 W1 b2 D2 b b1 L L1 L1 A1 e θ D1 D b3 b4 0.25 gauge line Topside view Backside view (single) E2 W2 C A W3 W1 F K D3 D3 D2 b3 b4 Backside view (dual) Revision: 05-Aug-2019 Document Number: 69003 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS MIN. NOM. INCHES MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 3.18 3.28 3.38 0.125 0.129 0.133 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 2.96 0.117  0° - 10° 0° - 10° ECN: S19-0643-Rev. E, 05-Aug-2019 DWG: 5976 Note • Millimeters will gover Revision: 05-Aug-2019 Document Number: 69003 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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