SIP32510DT-T1-GE3

SiP32510 www.vishay.com Vishay Siliconix 1.2 V to 5.5 V, Slew Rate Controlled Load Switch in TSOT23-6 DESCRIPTION FEATURES SiP32510 is a slew rate controlled load switches designed for 1.2 V to 5.5 V operation. • 1.2 V to 5.5 V operation voltage range The switch element is of n-channel device that provides low RON of 44 m typically over a wide range of input. • 44 m typical from 1.8 V to 5 V • Flat low RON down to 1.5 V • Slew rate controlled turn-on: 1.6 ms at 3.3 V SiP32510 has low switch on-resistance starting at 1.5 V input supply. It features a controlled soft on slew rate of typical 1.6 ms that limits the inrush current for designs of heavy capacitive load and minimizes the resulting voltage droop at the power rails. With a typical turn on delay of 0.4 ms, the total turn on time is typically 2 ms. • Low quiescent current < 1 μA when disabled 10.5 μA typical at VIN = 1.2 V Available • Reverse current blocking when switch is off, with guaranteed less than 2 μA leakage • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 The SiP32510 features a low voltage control logic interface (on / off interface) that can interface with low voltage control signals without extra level shifting circuit. APPLICATIONS The SiP32510 has exceptionally low shutdown current and provides reverse blocking to prevent high current flowing into the power source. • PDAs / smart phones SiP32510 integrates a switch off output discharge circuit. SiP32510 is available in TSOT23-6 package. • Portable media players • Ultrabook and notebook computer • Tablet devices • Digital camera • GPS navigation devices • Data storage devices • Optical, industrial, medical, and healthcare devices • Peripherals • Office automation • Networking TYPICAL APPLICATION CIRCUIT VIN IN OUT VOUT SiP32510 C IN 4.7 µF C OUT 0.1 µF EN GND EN GND GND Fig. 1 - SiP32510 Typical Application Circuit ORDERING INFORMATION TEMPERATURE RANGE PACKAGE MARKING PART NUMBER -40 °C to +85 °C TSOT23-6 LF SiP32510DT-T1-GE3 Note • -GE3 denotes halogen-free and RoHS-compliant S20-0528-Rev. E, 06-Jul-2020 Document Number: 63577 1 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 www.vishay.com Vishay Siliconix ABSOLUTE MAXIMUM RATINGS PARAMETER LIMIT Supply input voltage (VIN) UNIT -0.3 to 6 Enable input voltage (VEN) -0.3 to 6 Output voltage (VOUT) -0.3 to 6 Maximum continuous switch current (Imax.) c V 3 Maximum repetitive pulsed current (1 ms, 10 % duty cycle) c 6 Maximum non-repetitive pulsed current (100 μs, EN = active) c 12 ESD rating (HBM) >4 ESD rating (CDM) 1.5 Junction temperature (TJ) A kV -40 to +150 °C a 150 °C/W Power dissipation (PD) a, b 833 mW Thermal resistance (JA) Notes a. Device mounted with all leads and power pad soldered or welded to PC board, see PCB layout b. Derate 6.66 mW/°C above TA = 25 °C, see PCB layout c. TA = 25 °C Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE PARAMETER Input voltage range (VIN) Operating junction temperature range (TJ) LIMIT UNIT 1.2 to 5.5 V -40 to +125 °C SPECIFICATIONS PARAMETER Operating voltage c Quiescent current SYMBOL TEST CONDITIONS UNLESS SPECIFIED VIN = 5 V, TA = -40 °C to +85 °C (typical values are at TA = 25 °C) VIN IQ LIMITS -40 °C to +85 °C MIN. a UNIT TYP. b MAX. a 1.2 - 5.5 VIN = 1.2 V, EN = active - 10.5 17 VIN = 1.8 V, EN = active - 21 30 VIN = 2.5 V, EN = active - 34 50 VIN = 3.6 V, EN = active - 54 90 VIN = 4.3 V, EN = active - 68 110 180 VIN = 5 V, EN = active - 105 Off supply current IQ(off) EN = inactive, OUT = open - - 1 Off switch current IDS(off) EN = inactive, OUT = GND - - 1 IRB VOUT = 5 V, VIN = 0 V, VEN = inactive - - 10 VIN = 1.8 V, IL = 100 mA, TA = 25 °C - 45 53 VIN = 2.5 V, IL = 100 mA, TA = 25 °C - 44 52 VIN = 3.6 V, IL = 100 mA, TA = 25 °C - 44 52 VIN = 4.3 V, IL = 100 mA, TA = 25 °C - 44 52 VIN = 5 V, IL = 100 mA, TA = 25 °C - 46 52 - 3570 - VIN = 1.2 V - - 0.3 VIN = 1.8 V - - 0.4 d VIN = 2.5 V - - 0.5 d VIN = 3.6 V - - 0.6 d Reverse blocking current On-resistance On-resistance temp. coefficient EN input low voltage c S20-0528-Rev. E, 06-Jul-2020 RDS(on) TCRDS VIL VIN = 4.3 V - - 0.7 d VIN = 5 V - - 0.8 d V μA m ppm/°C V Document Number: 63577 2 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 www.vishay.com Vishay Siliconix SPECIFICATIONS PARAMETER EN input high voltage c SYMBOL LIMITS -40 °C to +85 °C TEST CONDITIONS UNLESS SPECIFIED VIN = 5 V, TA = -40 °C to +85 °C (typical values are at TA = 25 °C) MIN. a TYP. b MAX. a VIH UNIT VIN = 1.2 V 0.9 d - - VIN = 1.8 V 1.2 d - - VIN = 2.5 V 1.4 d - - VIN = 3.6 V 1.6 d - - VIN = 4.3 V 1.7 d - - VIN = 5 V 1.8 - - V EN input leakage ISINK VEN = 5.5 V -1 - 1 Output pulldown resistance RPD EN = inactive, TA = 25 °C - 217 280  tON_RESP VIN = 3.3 V, TA = 25 °C - 20 200 μs - 0.4 - 1.3 1.6 2.2 - - 0.001 - 3 Switch turn-on response time d Output turn-on delay time (50 % EN to 10 % out) Output turn-on rise time (10 % out) to 90 % out) Output turn-off delay time (50 % EN to 90 % out) td(on) tr VIN = 3.3 V, RLOAD= 10 , CLOAD = 0.1 μF, TA = 25 °C td(off) μA ms Output turn-on time VIN = 3.3 V, RLOAD = 10 , t(on) 1.2 (50 % EN to 95 % out) e CLOAD = 100 μF, TA = 25 °C Notes a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing c. For VIN outside this range consult typical EN threshold curve d. Not tested, guaranteed by design e. Not tested, guaranteed by correlation test with 10 , 0.1 μF load TIMING WAVEFORMS Fig. 2 PIN CONFIGURATION 1 6 2 5 3 4 Top View Fig. 3 - TSOT23-6 Package S20-0528-Rev. E, 06-Jul-2020 Document Number: 63577 3 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 www.vishay.com Vishay Siliconix PIN DESCRIPTION PIN NUMBER NAME 1, 2 OUT 3 EN 4 GND 5, 6 IN FUNCTION These are output pins of the switch Enable input Ground connection These are input pins of the switch BLOCK DIAGRAM Reverse Blocking OUT IN Charge Pump Control Logic EN Turn On Slew Rate Control GND Fig. 4 - Functional Block Diagram S20-0528-Rev. E, 06-Jul-2020 Document Number: 63577 4 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 www.vishay.com Vishay Siliconix 140 120 120 100 VIN = 5 V IQ - Quiescent Current (μA) IQ - Quiescent Current (μA) TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 100 80 60 40 80 60 VIN = 3.6 V 40 20 20 0 VIN = 1.2 V 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 - 40 - 20 0 VIN (V) 20 40 60 80 100 Temperature (°C) Fig. 8 - Quiescent Current vs. Temperature Fig. 5 - Quiescent Current vs. Input Voltage 1.2 1000 100 1.0 IIQ(OFF) - Off Supply Current (nA) IQ(OFF) - Off Supply Current (nA) 1.1 0.9 0.8 0.7 0.6 0.5 0.4 10 VIN = 5 V 1 VIN = 3.6 V 0.1 0.01 VIN = 1.2 V 0.3 0.2 0.001 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 - 40 - 20 0 VIN (V) 20 40 60 80 100 Temperature (°C) Fig. 9 - Off Supply Current vs. Temperature Fig. 6 - Off Supply Current vs. Input Voltage 1.2 1000 1.0 IDS(off) - Off Switch Current (nA) IDS(off) - Off Switch Current (nA) 1.1 0.9 0.8 0.7 0.6 0.5 0.4 100 10 1 VIN = 5 V VIN = 3.6 V 0.1 0.01 0.3 VIN = 1.2 V 0.2 0.001 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VIN (V) Fig. 7 - Off Switch Current vs. Input Voltage S20-0528-Rev. E, 06-Jul-2020 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Fig. 10 - Off Switch Current vs. Temperature Document Number: 63577 5 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 60 235 58 RDS - On-Resistance (mΩ) 56 RPD - Output Pulldown Resistance (Ω) IO = 2.5 A IO = 2.0 A 54 IO = 1.5 A IO = 1.0 A 52 IO = 0.1 A 50 48 46 44 42 40 VOUT = VIN = 5 V 230 225 220 215 210 205 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 - 40 - 20 0 VIN (V) 60 80 100 Temperature (°C) 0 800 VOUT = VIN 700 -2 600 IIN - Input Current (nA) RPD - Output Pulldown Resistance (Ω) 40 Fig. 14 - Output Pulldown Resistance vs. Temperature Fig. 11 - On-Resistance vs. Input Voltage 500 400 300 -4 -6 VIN = 0V -8 200 - 10 100 0 - 12 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.5 1.0 1.5 2.0 VIN (V) 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VOUT (V) Fig. 15 - Reverse Blocking Current vs. Output Voltage Fig. 12 - Output Pulldown Resistance vs. Input Voltage 2.50 60 IO = 0.1 A VIN = 5 V VIN = 5 V CL = 0.1 μF RL = 10 Ω 2.40 2.30 55 2.20 tr - Rise Time (ms) RDS - On-Resistance (mΩ) 20 50 45 2.10 2.00 1.90 1.80 1.70 40 1.60 1.50 35 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Fig. 13 - On-Resistance vs. Temperature S20-0528-Rev. E, 06-Jul-2020 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Fig. 16 - Rise Time vs. Temperature Document Number: 63577 6 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 0.20 VIN = 5 V CL = 0.1 μF RL = 10 Ω 0.5 VIN = 5 V CL = 0.1 μF RL = 10 Ω 0.18 td(off) - Turn-Off Delay Time (μs) td(on) - Turn-On Delay Time (ms) 0.6 0.4 0.3 0.2 0.1 0.16 0.14 0.12 0.10 0.08 0 0.06 - 40 - 20 0 20 40 60 80 100 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Temperature (°C) Fig. 17 - Turn-On Delay Time vs. Temperature Fig. 18 - Turn-Off Delay Time vs. Temperature 1.6 1.5 EN Threshold Voltage (V) 1.4 1.3 1.2 VIH 1.1 1.0 VIL 0.9 0.8 0.7 0.6 0.5 1 1.5 2 2.5 3 3.5 VIN (V) 4 4.5 5 5.5 Fig. 19 - EN Threshold Voltage vs. Input Voltage S20-0528-Rev. E, 06-Jul-2020 Document Number: 63577 7 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 www.vishay.com Vishay Siliconix TYPICAL WAVEFORMS EN 5Vout EN 5Vout 3.6Vout 3.6Vout 1.5Vout 1.5Vout Iout for 5Vout Iout for 3.6Vout Iout for 1.5Vout 2 V/Div, 2 A/Div, 2 ms/Div Iout for 5Vout Iout for 3.6Vout Iout for 1.5Vout 2 V/Div, 2 A/Div, 2 s/Div Fig. 20 - Typical Turn-On Delay, Rise Time COUT = 0.1 μF, CIN = 4.7 μF, IOUT = 1.5 A Fig. 23 - Typical Fall Time COUT = 0.1 μF, CIN = 4.7 μF, IOUT = 1.5 A EN 5Vout EN 5Vout 3.6Vout 3.6Vout 1.5Vout 1.5Vout Iout for 5Vout Iout for 3.6Vout Iout for 1.5Vout 2 V/Div, 0.2 A/Div, 2 ms/Div Iout for 5Vout Iout for 3.6Vout Iout for 1.5Vout 2 V/Div, 0.2 A/Div, 2 s/Div Fig. 21 - Typical Turn-On Delay, Rise Time COUT = 0.1 μF, CIN = 4.7 μF, ROUT = 10  Fig. 24 - Typical Fall Time COUT = 0.1 μF, CIN = 4.7 μF, ROUT = 10  EN 5Vout 5Vout 3.6Vout 3.6Vout 1.5Vout 1.5Vout Iout for 5Vout Iout for 5Vout Iout for 3.6Vout Iout for 3.6Vout Iout for 1.5Vout Iout for 1.5Vout 2 V/Div, 2 A/Div, 2 ms/Div Fig. 22 - Typical Turn-On Delay, Rise Time COUT = 200 μF, CIN = 4.7 μF, IOUT = 1.5 A S20-0528-Rev. E, 06-Jul-2020 EN 2 V/Div, 2 A/Div, 500 s /Div Fig. 25 - Typical Fall Time COUT = 200 μF, CIN = 4.7 μF, IOUT = 1.5 A Document Number: 63577 8 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 www.vishay.com Vishay Siliconix EN 5Vout EN 5Vout 3.6Vout 3.6Vout 1.5Vout 1.5Vout Iout for 5Vout Iout for 3.6Vout Iout for 1.5Vout 2 V/Div, 0.2 A/Div, 2 ms/Div Iout for 5Vout Iout for 3.6Vout Iout for 1.5Vout 2 V/Div, 0.2 A/Div, 2 ms/Div Fig. 26 - Typical Turn-On Delay, Rise Time COUT = 200 μF, CIN = 4.7 μF, ROUT = 10  Fig. 29 - Typical Fall Time COUT = 200 μF, CIN = 4.7 μF, ROUT = 10  EN 5Vout EN 5Vout 3.6Vout 3.6Vout 1.5Vout 1.5Vout Iout for 5Vout Iout for 5Vout Iout for 3.6Vout Iout for 3.6Vout Iout for 1.5Vout Iout for 1.5Vout 2 V/Div, 2 A/Div, 200 s /Div 2 V/Div, 2 A/Div, 2 ms/Div Fig. 27 - Typical Turn-On Delay, Rise Time COUT = 100 μF, CIN = 4.7 μF, IOUT = 1.5 A Fig. 30 - Typical Fall Time COUT = 100 μF, CIN = 4.7 μF, IOUT = 1.5 A EN 5Vout 5Vout 3.6Vout 3.6Vout 1.5Vout 1.5Vout Iout for 5Vout Iout for 5Vout Iout for 3.6Vout Iout for 3.6Vout Iout for 1.5Vout Iout for 1.5Vout 2 V/Div, 0.2 A/Div, 1 ms/Div Fig. 28 - Typical Turn-On Delay, Rise Time COUT = 100 μF, CIN = 4.7 μF, ROUT = 10  S20-0528-Rev. E, 06-Jul-2020 EN 2 V/Div, 0.2 A/Div, 2 ms/Div Fig. 31 - Typical Turn-On Delay, Fall Time COUT = 100 μF, CIN = 4.7 μF, ROUT = 10  Document Number: 63577 9 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 www.vishay.com Vishay Siliconix DETAILED DESCRIPTION SiP32510 is advanced slew rate controlled high side load switch consisted of a n-channel power switch. When the device is enable the gate of the power switch is turned on at a controlled rate to avoid excessive in-rush current. Once fully on the gate to source voltage of the power switch is biased at a constant level. The design gives a flat on resistance throughout the operating voltages. When the device is off, the reverse blocking circuitry prevents current from flowing back to input if output is raised higher than input. The reverse blocking mechanism also works in case of no input applied. APPLICATION INFORMATION Input Capacitor SiP32510 does not require input capacitor. To limit the voltage drop on the input supply caused by transient inrush currents, a input bypass capacitor is recommended. A 2.2 μF ceramic capacitor placed as close to the VIN and GND should be enough. Higher values capacitor can help to further reduce the voltage drop. Ceramic capacitors are recommended for their ability to withstand input current surge from low impedance sources such as batteries in portable devices. Output Capacitor While these devices work without an output capacitor, an 0.1 μF or larger capacitor across VOUT and GND is recommended to accommodate load transient condition. It also helps preventing parasitic inductance from forcing VOUT below GND when switching off. Output capacitor has minimal affect on device’s turn on slew rate time. There is no requirement on capacitor type and its ESR. Enable The EN pin is compatible with both TTL and CMOS logic voltage levels. Enable pin voltage can be above IN once it is within the absolute maximum rating range. The maximum power dissipation in any application is dependent on the maximum junction temperature, TJ (max.) = 125 °C, the junction-to-ambient thermal resistance for the TSOT23-6 package, J-A = 150 °C/W, and the ambient temperature, TA, which may be formulaically expressed as: 125 - T A T J (max.) - T A P (max.) = ------------------------------------- = ---------------------- JA 150 It then follows that, assuming an ambient temperature of 70 °C, the maximum power dissipation will be limited to about 367 mW. So long as the load current is below the 3 A limit, the maximum continuous switch current becomes a function of two things: the package power dissipation and the RDS(on) at the ambient temperature. As an example let us calculate the worst case maximum load current at TA = 70 °C and 3.6 V input. The worst case RDS(on) at 25 °C and 3.6 V input is 52 m. The RDS(on) at 70 °C can be extrapolated from this data using the following formula: RDS(on) (at 70 °C) = RDS(on) (at 25 °C) x (1 + TC x T) Where TC is 3570 ppm/°C. Continuing with the calculation we have RDS(on) (at 70 °C) = 52 m x (1 + 0.00357 x (70 °C - 25 °C)) = 60 m The maximum current limit is then determined by P (max.) I LOAD (max.)  --------------------R DS(on) which in this case is 2.4 A. Under the stated input voltage condition, if the 2.4 A current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. Protection Against Reverse Voltage Condition SiP32510 contains a reverse blocking circuitry to protect the current from going to the input from the output in case where the output voltage is higher than the input voltage when the main switch is off. Reverse blocking works for input voltage as low as 0 V. Thermal Considerations SiP32510 is designed to maintain a constant output load current. Due to physical limitations of the layout and assembly of the device the maximum switch current is 3 A, as stated in the Absolute Maximum Ratings table. However, another limiting characteristic for the safe operating load current is the thermal power dissipation of the package. To obtain the highest power dissipation (and a thermal resistance of 150 °C/W) the in and out pins of the device should be connected to heat sinks on the printed circuit board. All copper traces and vias for the in and out pins should be sized adequately to carry the maximum continuous current. S20-0528-Rev. E, 06-Jul-2020 Reverse Blocking IN OUT Charge Pump Control Logic Input Buffer EN Control and Drive VOUT > VIN Detect Pull Down Circuit When VOUT is 0.8 V above the VIN, pull down circuit will be activated. It connects the EN to GND with a resistance of around 1 kΩ. Active EN Pull Down for Reverse Blocking When an internal circuit detects the condition of VOUT 0.8 V higher than VIN, it will turn on the pull down circuit connected to EN, forcing the switching off. The pull down value is about 1 k. Document Number: 63577 10 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 www.vishay.com Vishay Siliconix Pulse Current Capability RDS(on) Measurement The device is mounted on the evaluation board shown in the PCB layout section. It is loaded with pulses of 5 A and 1 ms for periods of 4.6 ms. As mentioned in the thermal consideration section, the RDS(on) is an important specification for the load switch. A proper method to measure the RDS(on) will ensure the proper calculation of the maximum operating power the SiP32510 load switch. The Kelvin connection directly to the input / output pin of the device is used to measure the dropout voltage of the SiP32510. By using the Kelvin connection to measure the dropout voltage will eliminate the measurement error due to the voltage drop caused by the forced power current. As illustrated in the following layout, J6 (OUT-S) is Kelvin connection to the output of SiP32510 and J5 (IN-S) is the Kelvin connection to the input of SiP32510. A current meter is used to measure the output current. 5A 1 ms 180 mA 4.6 ms The SiP32510 can safely support 5 A pulse current repetitively at 25 °C. RDS(on) is calculated by the following formula: Switch Non-Repetitive Pulsed Current The SiP32510 can withstand inrush current of up to 12 A for 100 μs at 25 °C when heavy capacitive loads are connected and the part is already enabled. RDS(on) = Dropout Voltage Output Current Recommended Board Layout For the best performance, all traces should be as short as possible to minimize the inductance and parasitic effects. The input and output capacitors should be kept as close as possible to the input and output pins respectively. Using wide traces for input, output, and GND help reducing the case to ambient thermal impedance.         S20-0528-Rev. E, 06-Jul-2020 Fig. 32 - Evaluation Board Layout for TSOT23-6L Document Number: 63577 11 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 www.vishay.com Vishay Siliconix PRODUCT SUMMARY Part number SiP32510 Description 1.2 V to 5.5 V, 44 m, 1.6 ms rise time with bidirectional off isolation, output discharge Configuration Single Slew rate time (μs) 1600 On delay time (μs) 400 Input voltage min. (V) 1.2 Input voltage max. (V) 5.5 On-resistance at input voltage min. (m) 47 On-resistance at input voltage max. (m) 44 Quiescent current at input voltage min. (μA) 10.5 Quiescent current at input voltage max. (μA) 105 Output discharge (yes / no) Yes Reverse blocking (yes / no) Yes Continuous current (A) Package type Package size (W, L, H) (mm) 3 TSOT23-6 3.0 x 2.9 x 1.0 Status code 2 Product type Slew rate Applications Computers, consumer, industrial, healthcare, networking, portable Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63577. S20-0528-Rev. E, 06-Jul-2020 Document Number: 63577 12 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Thin SOT-23 : 5- and 6-Lead (Power IC only) e1 6 5 4 E1 1 2 E 3 -B- 4 Pin #1 indetifier e 0.15 M C B A b -AD 4 x θ1 0.17 ref c R A2 R L A Gage plane Seating plane θ Seating plane 4 x θ1 A1 0.08 C L (L1) -CNotes: 1. Use millimeters as the primary measurement. 2. Dimensioning and tolerances conform to ASME Y14.5M. - 1994. 3. This part is fully compliant with JEDEC MO-193. 4. Detail of Pin #1 indentifier is optional. MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. A 0.91 1.00 1.10 0.036 0.039 MAX. 0.043 A1 0.00 0.05 0.10 0.000 0.002 0.004 0.039 A2 0.85 0.90 1.00 0.033 0.035 b 0.30 0.40 0.45 0.012 0.016 0.018 c 0.10 0.15 0.20 0.004 0.006 0.008 D 2.85 2.95 3.10 0.112 0.116 0.122 E 2.70 2.85 2.98 0.106 0.112 0.117 E1 1.525 1.65 1.70 0.060 0.065 0.067 0.50 0.014 e L 0.95 BSC 0.30 0.40 L1 0.60 ref. L2 0.25 BSC 0.0374 BSC - 0.020 0.024 BSC 0.010 BSC  0° 4° 8° 0° 4° 8° 1 4° 10° 12° 4° 10° 12° ECN: E13-1126-Rev. B, 01-Jul-13 DWG: 5926 Revision: 01-Jul-13 Document Number: 72821 1 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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