SiR646DP
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) () Max.
ID (A)a
0.0038 at VGS = 10 V
60
0.0053 at VGS = 4.5 V
60
VDS (V)
40
Qg (Typ.)
16.8 nC
PowerPAK® SO-8
S
6.15 mm
APPLICATIONS
• Synchronous Rectification
• DC/DC Converters
• DC/AC Inverters
5.15 mm
1
S
2
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
S
3
D
G
4
D
G
8
D
7
D
6
D
5
Bottom View
S
Ordering Information:
SiR646DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
VDS
Limit
40
Gate-Source Voltage
VGS
± 20
TC = 70 °C
TA = 25 °C
60a
ID
27b,c
21.6b,c
TA = 70 °C
IDM
Pulsed Drain Current (t = 100 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
L =0.1 mH
IS
4.5b,c
IAS
30
EAS
45
TC = 25 °C
54
34.7
PD
mJ
W
5b,c
3.2b,c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
200
49
TC = 70 °C
TA = 25 °C
V
60a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
- 55 to 150
Soldering Recommendations (Peak Temperature)d,e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb,f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
Typical
Maximum
t 10 s
20
25
Steady State
RthJC
1.8
2.3
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
Document Number: 62907
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-2178-Rev. A, 14-Oct-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR646DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
40
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
V
24
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.2
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS 5 V, VGS = 10 V
- 4.8
1
50
µA
A
VGS = 10 V, ID = 20 A
0.0031
0.0038
VGS = 4.5 V, ID = 10 A
0.0042
0.0053
VDS = 10 V, ID = 20 A
71
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Output Charge
Qoss
VDS = 20 V, VGS = 0 V
Rg
f = 1 MHz
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2230
VDS = 20 V, VGS = 0 V, f = 1 MHz
121
VDS = 20 V, VGS = 10 V, ID = 10 A
VDS = 20 V, VGS = 4.5 V, ID = 10 A
td(off)
34
51
16.8
26
5.3
nC
4.7
td(on)
tr
pF
1850
VDD = 20 V, RL = 2
ID 10 A, VGEN = 10 V, Rg = 1
0.2
46.5
70
0.6
1.2
10
20
11
22
22
44
tf
9
18
td(on)
21
40
66
120
21
40
11
22
tr
td(off)
VDD = 20 V, RL = 2
ID 10 A, VGEN = 4.5 V, Rg = 1
tf
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current (tp = 100 µs)
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
49
100
IS = 5 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.74
1.1
V
49
95
ns
40
80
nC
19
30
ns
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 62907
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-2178-Rev. A, 14-Oct-13
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR646DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
120
120
VGS = 10 V thru 4 V
100
ID - Drain Current (A)
ID - Drain Current (A)
100
80
60
VGS = 3 V
40
80
60
TC = 25 °C
40
20
20
TC = 125 °C
VGS = 2 V
0
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
0.0
2.5
1.0
2.0
3.0
4.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
5.0
Transfer Characteristics
0.0055
5500
0.0050
4400
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TC = - 55 °C
0
VGS = 4.5 V
0.0045
0.0040
0.0035
Coss
Ciss
3300
2200
VGS = 10 V
1100
0.0030
Crss
0.0025
0
0
20
40
60
ID - Drain Current (A)
80
100
0
8
16
24
32
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
2.0
ID = 10 A
ID = 20 A
VGS = 10 V
1.7
8
VDS = 20 V
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
40
6
VDS = 10 V
4
VDS = 30 V
1.4
VGS = 4.5 V
1.1
0.8
2
0
0
10
20
30
40
Qg - Total Gate Charge (nC)
Gate Charge
50
0.5
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
Document Number: 62907
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-2178-Rev. A, 14-Oct-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR646DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.020
100
ID = 20 A
0.016
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 25 °C
1
0.1
0.01
0.012
0.008
TJ = 125 °C
0.004
TJ = 25 °C
0.001
0.000
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
0.5
300
0.2
240
- 0.1
180
ID = 5 mA
- 0.4
ID = 250 μA
- 0.7
- 1.0
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
10
On-Resistance vs. Gate-to-Source Voltage
Power (W)
VGS(th) Variance (V)
Source-Drain Diode Forward Voltage
2
4
6
8
VGS - Gate-to-Source Voltage (V)
120
60
125
150
0
0.001
Threshold Voltage
0.01
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
1000
IDM Limited
ID - Drain Current (A)
100
100 μs
ID Limited
1 ms
10
10 ms
Limited by RDS(on)*
1
100 ms
1s
10 s
0.1
TA = 25 °C
Single Pulse
0.01
0.01
DC
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 62907
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-2178-Rev. A, 14-Oct-13
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR646DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
ID - Drain Current (A)
80
60
Limited by Package
40
20
0
0
25
50
75
100
125
150
0
25
TC - Case Temperature (°C)
65
2.5
52
2.0
39
1.5
Power (W)
Power (W)
Current Derating*
26
13
1.0
0.5
0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
50
75
100
125
150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62907
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-2178-Rev. A, 14-Oct-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR646DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.01
0.0001
0.02
Single Pulse
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62907.
Document Number: 62907
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-2178-Rev. A, 14-Oct-13
6
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000