SIR646DP-T1-GE3

SiR646DP Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0038 at VGS = 10 V 60 0.0053 at VGS = 4.5 V 60 VDS (V) 40 Qg (Typ.) 16.8 nC PowerPAK® SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification • DC/DC Converters • DC/AC Inverters 5.15 mm 1 S 2 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S 3 D G 4 D G 8 D 7 D 6 D 5 Bottom View S Ordering Information: SiR646DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Symbol VDS Limit 40 Gate-Source Voltage VGS ± 20 TC = 70 °C TA = 25 °C 60a ID 27b,c 21.6b,c TA = 70 °C IDM Pulsed Drain Current (t = 100 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation TC = 25 °C TA = 25 °C L =0.1 mH IS 4.5b,c IAS 30 EAS 45 TC = 25 °C 54 34.7 PD mJ W 5b,c 3.2b,c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 200 49 TC = 70 °C TA = 25 °C V 60a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit - 55 to 150 Soldering Recommendations (Peak Temperature)d,e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb,f Maximum Junction-to-Case (Drain) Symbol RthJA Typical Maximum t  10 s 20 25 Steady State RthJC 1.8 2.3 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 °C/W. Document Number: 62907 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-2178-Rev. A, 14-Oct-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR646DP Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V 24 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.2 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS 5 V, VGS = 10 V - 4.8 1 50 µA A VGS = 10 V, ID = 20 A 0.0031 0.0038 VGS = 4.5 V, ID = 10 A 0.0042 0.0053 VDS = 10 V, ID = 20 A 71  S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Output Charge Qoss VDS = 20 V, VGS = 0 V Rg f = 1 MHz Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 2230 VDS = 20 V, VGS = 0 V, f = 1 MHz 121 VDS = 20 V, VGS = 10 V, ID = 10 A VDS = 20 V, VGS = 4.5 V, ID = 10 A td(off) 34 51 16.8 26 5.3 nC 4.7 td(on) tr pF 1850 VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  0.2 46.5 70 0.6 1.2 10 20 11 22 22 44 tf 9 18 td(on) 21 40 66 120 21 40 11 22 tr td(off) VDD = 20 V, RL = 2  ID  10 A, VGEN = 4.5 V, Rg = 1  tf  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (tp = 100 µs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 49 100 IS = 5 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.74 1.1 V 49 95 ns 40 80 nC 19 30 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 62907 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-2178-Rev. A, 14-Oct-13 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR646DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 120 120 VGS = 10 V thru 4 V 100 ID - Drain Current (A) ID - Drain Current (A) 100 80 60 VGS = 3 V 40 80 60 TC = 25 °C 40 20 20 TC = 125 °C VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) 0.0 2.5 1.0 2.0 3.0 4.0 VGS - Gate-to-Source Voltage (V) Output Characteristics 5.0 Transfer Characteristics 0.0055 5500 0.0050 4400 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = - 55 °C 0 VGS = 4.5 V 0.0045 0.0040 0.0035 Coss Ciss 3300 2200 VGS = 10 V 1100 0.0030 Crss 0.0025 0 0 20 40 60 ID - Drain Current (A) 80 100 0 8 16 24 32 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 2.0 ID = 10 A ID = 20 A VGS = 10 V 1.7 8 VDS = 20 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 40 6 VDS = 10 V 4 VDS = 30 V 1.4 VGS = 4.5 V 1.1 0.8 2 0 0 10 20 30 40 Qg - Total Gate Charge (nC) Gate Charge 50 0.5 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 62907 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-2178-Rev. A, 14-Oct-13 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR646DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.020 100 ID = 20 A 0.016 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.012 0.008 TJ = 125 °C 0.004 TJ = 25 °C 0.001 0.000 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 0.5 300 0.2 240 - 0.1 180 ID = 5 mA - 0.4 ID = 250 μA - 0.7 - 1.0 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 10 On-Resistance vs. Gate-to-Source Voltage Power (W) VGS(th) Variance (V) Source-Drain Diode Forward Voltage 2 4 6 8 VGS - Gate-to-Source Voltage (V) 120 60 125 150 0 0.001 Threshold Voltage 0.01 0.1 Time (s) 1 10 Single Pulse Power, Junction-to-Ambient 1000 IDM Limited ID - Drain Current (A) 100 100 μs ID Limited 1 ms 10 10 ms Limited by RDS(on)* 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.01 DC BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 62907 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-2178-Rev. A, 14-Oct-13 4 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR646DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 ID - Drain Current (A) 80 60 Limited by Package 40 20 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 65 2.5 52 2.0 39 1.5 Power (W) Power (W) Current Derating* 26 13 1.0 0.5 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 62907 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-2178-Rev. A, 14-Oct-13 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR646DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.01 0.0001 0.02 Single Pulse 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62907. Document Number: 62907 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-2178-Rev. A, 14-Oct-13 6 This document is subject to change without notice. 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