SiR432DP
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.0306 at VGS = 10 V
28.4
0.0327 at VGS = 7.5 V
27.5
VDS (V)
100
Qg (Typ.)
15.5 nC
PowerPAK SO-8
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
S
6.15 mm
• Primary Side Switch
5.15 mm
1
D
S
2
S
3
G
4
D
8
G
D
7
D
6
D
5
S
Bottom View
N-Channel MOSFET
Ordering Information: SiR432DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
ID
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
Limit
100
± 20
28.4
22.7
8.6b, c
6.9b, c
40
40g
4.2b, c
17
14.5
54
34.7
5.0b, c
3.2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t ≤ 10 s
RthJA
20
25
Maximum Junction-to-Ambientb, f
°C/W
1.8
2.3
Maximum Junction-to-Case (Drain)
Steady State
RthJC
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 65163
S09-1494-Rev. A, 10-Aug-09
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1
SiR432DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
100
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
V
100
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
4
V
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = 100 V, VGS = 0 V
1
VDS = 100 V, VGS = 0 V, TJ = 55 °C
10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
VDS ≤ 5 V, VGS = 10 V
RDS(on)
Forward Transconductancea
gfs
- 8.6
2
40
µA
A
VGS = 10 V, ID = 8.6 A
0.0255
0.0306
VGS = 7.5 V, ID = 8.3 A
0.0272
0.0327
VDS = 15 V, ID = 8.6 A
38
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
1170
VDS = 50 V, VGS = 0 V, f = 1 MHz
45
VDS = 50 V, VGS = 10 V, ID = 8.6 A
VDS = 50 V, VGS = 7.5 V, ID = 8.6 A
f = 1 MHz
td(on)
VDD = 50 V, RL = 7.2 Ω
ID ≅ 6.9 A, VGEN = 10 V, Rg = 1 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
0.2
0.9
1.8
12
20
10
20
30
8
16
td(on)
14
21
VDD = 50 V, RL = 7.2 Ω
ID ≅ 6.9 A, VGEN = 7.5 V, Rg = 1 Ω
tf
Fall Time
5.9
20
td(off)
Turn-Off Delay Time
32
24
tf
tr
Rise Time
21
15.5
nC
5.4
Rg
Gate Resistance
Turn-On Delay Time
pF
115
9
18
18
27
8
16
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
TC = 25 °C
IS
40
ISM
40
IS = 6.9 A
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 6.9 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
43
65
ns
80
120
nC
33
10
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65163
S09-1494-Rev. A, 10-Aug-09
SiR432DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1600
40
VGS = 10 V thru 6 V
Ciss
1200
C - Capacitance (pF)
ID - Drain Current (A)
30
VGS = 5 V
20
800
Coss
400
10
VGS = 4 V
0
0.0
0
0.5
1.0
1.5
2.0
2.5
Crss
0
3.0
20
VDS - Drain-to-Source Voltage (V)
40
80
100
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
10
VGS - Gate-to-Source Voltage (V)
ID = 8.6 A
1.2
ID - Drain Current (A)
60
0.9
TC = 125 °C
0.6
TC = 25 °C
0.3
VDS = 50 V
8
VDS = 25 V
6
VDS = 80 V
4
2
TC = - 55 °C
0.0
0
0
1
2
3
4
5
0
6
VGS - Gate-to-Source Voltage (V)
12
18
24
Qg - Total Gate Charge (nC)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
0.034
2.5
0.031
RDS(on) - On-Resistance
(Normalized)
RDS(on) - On-Resistance (Ω)
ID = 8.6 A
VGS = 10 V
2.1
VGS = 7.5 V
0.028
VGS = 10 V
0.025
1.7
VGS = 7.5 V
1.3
0.9
0.022
0
10
20
ID - Drain Current (A)
Gate Charge
Document Number: 65163
S09-1494-Rev. A, 10-Aug-09
30
40
0.5
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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SiR432DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.5
3.0
ID = 250 µA
10
VGS(th) (V)
IS - Source Current (A)
100
TJ = 150 °C
2.5
TJ = 25 °C
1
2.0
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.5
- 50
1.2
- 25
0
50
75
100
125
150
TJ - Temperature (°C)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.090
250
200
0.070
Power (W)
RDS(on) - On-Resistance (Ω)
25
TJ = 125 °C
0.050
150
100
0.030
50
TJ = 25 °C
0.010
0
4
5
6
7
8
9
10
0.001
0.01
VGS - Gate-to-Source Voltage (V)
0.1
1
10
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
100 µs
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 65163
S09-1494-Rev. A, 10-Aug-09
SiR432DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
32
ID - Drain Current (A)
24
16
8
0
0
25
50
75
100
125
150
0
25
TC - Case Temperature (°C)
Current Derating*
70
2.4
60
1.8
Power (W)
Power (W)
50
40
30
20
1.2
0.6
10
0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Power Derating
125
150
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65163
S09-1494-Rev. A, 10-Aug-09
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SiR432DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 65 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65163.
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Document Number: 65163
S09-1494-Rev. A, 10-Aug-09
Legal Disclaimer Notice
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Revision: 01-Jan-2022
1
Document Number: 91000