SQD100N02_3M5L4GE3

SQD100N02-3m5L www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 20 RDS(on) () at VGS = 10 V 0.0035 • 100 % Rg and UIS tested RDS(on) () at VGS = 4.5 V 0.0045 • AEC-Q101 qualified d ID (A) • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 100 Configuration Single Package TO-252 TO-252 TO D Drain connected to tab G S N-Channel MOSFET D G S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 100 65 IS 75 IDM 300 IAS 45 EAS 101 PD UNIT 83 27 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c RthJA 50 RthJC 1.8 °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. S15-2646-Rev. A, 05-Nov-15 Document Number: 63527 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD100N02-3m5L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b VDS VGS = 0 V, ID = 250 μA 20 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 20 V - - 1 VGS = 0 V VDS = 20 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 20 V, TJ = 175 °C - - 250 VGS = 10 V VDS  5 V 50 - - VGS = 10 V ID = 30 A - 0.0020 0.0035 VGS = 10 V ID = 30 A, TJ = 125 °C - - 0.0050 VGS = 10 V ID = 30 A, TJ = 175 °C - - 0.0058 VGS = 4.5 V ID = 20 A - 0.0030 0.0045 - 186 - VDS = 15 V, ID = 30 A V nA μA A  S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Rg Turn-On Delay Time c Rise Timec Turn-Off Delay Time c Fall Time c - 4300 5500 - 1350 1700 - 585 800 - 70 110 - 21 - - 11 - f = 1 MHz 1.1 2.3 3.5 - 15 25 VDD = 10 V, RL = 0.2  ID  50 A, VGEN = 10 V, Rg = 1  - 5 10 - 38 60 - 15 25 - - 300 A - 0.86 1.2 V VGS = 0 V VGS = 10 V VDS = 10 V, f = 1 MHz VDS = 10 V, ID = 50 A td(on) tr td(off) tf pF nC  ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = 50 A, VGS = 0 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2646-Rev. A, 05-Nov-15 Document Number: 63527 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD100N02-3m5L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 160 VGS = 10 V thru 4 V 10000 80 1st line 2nd line 64 100 VGS = 3 V 32 1000 60 1st line 2nd line 1000 96 2nd line ID - Drain Current (A) 128 2nd line ID - Drain Current (A) 100 10000 TC = 125 °C 40 TC = 25 °C 100 20 TC = -55 °C 0 0 10 0 2 4 6 8 10 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 10 Axis Title 300 0.010 10000 10000 1000 180 TC = 125 °C 120 100 60 0 12 24 36 48 1000 0.006 0.004 VGS = 4.5 V 0.002 VGS = 10 V 60 10 0 20 80 Transconductance On-Resistance vs. Drain Current Axis Title 1st line 2nd line 2400 100 Coss 1200 Crss 0 10 12 16 20 10000 ID = 50 A VDS = 10 V 8 1000 6 1st line 2nd line 1000 3600 2nd line VGS - Gate-to-Source Voltage (V) Ciss 8 4 100 2 0 10 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S15-2646-Rev. A, 05-Nov-15 100 10 10000 4800 2nd line C - Capacitance (pF) 60 ID - Drain Current (A) 2nd line Axis Title 4 40 ID - Drain Current (A) 2nd line 6000 0 100 0.000 10 0 0.008 1st line 2nd line TC = 25 °C 2nd line RDS(on) - On-Resistance (Ω) 240 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 100 Document Number: 63527 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD100N02-3m5L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 VGS = 10 V TJ = 150 °C 10 2nd line IS - Source Current (A) 1.5 1000 VGS = 4.5 V 1.3 1.1 100 0.9 0.7 0 25 50 TJ = 25 °C 0.1 100 0.01 0.001 10 -50 -25 1000 1 75 100 125 150 175 10 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.02 0.6 10000 0.016 10000 1000 0.012 0.008 100 TJ = 150 °C 0.004 0 2 4 8 -0.6 ID = 250 μA -1.4 10 6 ID = 5 mA 100 -1.0 TJ = 25 °C 0 1000 -0.2 1st line 2nd line 2nd line VGS(th) Variance (V) 0.2 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line ID = 30 A 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 1.7 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 10000 ID = 1 mA 28 1000 26 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 30 24 100 22 20 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Breakdown Voltage vs. Junction Temperature S15-2646-Rev. A, 05-Nov-15 Document Number: 63527 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD100N02-3m5L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1000 10000 100 μs IDM limited 1000 1 ms 10 ms 100 ms, 1 s, 10 s, DC ID limited 10 1 Limited by RDS(on) (1) 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 0.1 TC = 25 °C Single pulse 0.01 0.01 (1) 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 50 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-2 4. Surface Mounted 10-1 1 10 Square Wave Pulse Duration (s) 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient S15-2646-Rev. A, 05-Nov-15 Document Number: 63527 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD100N02-3m5L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.                                    Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63527. S15-2646-Rev. A, 05-Nov-15 Document Number: 63527 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T13-0592-Rev. A, 02-Sep-13 DWG: 6019 Note • Dimension L3 is for reference only. Revision: 02-Sep-13 Document Number: 64424 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000