SQD50P06-15L
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Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
- 60
RDS(on) () at VGS = - 10 V
0.0155
RDS(on) () at VGS = - 4.5 V
0.0200
ID (A)
• Package with Low Thermal Resistance
• 100 % Rg and UIS Tested
• AEC-Q101 Qualified
- 50
Configuration
Single
TO-252
S
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
G
Drain Connected to Tab
G
D
S
D
P-Channel MOSFET
Top View
ORDERING INFORMATION
Package
TO-252
Lead (Pb)-free and Halogen-free
SQD50P06-15L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 60
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Currenta
Continuous Source Current (Diode
TC = 125 °C
Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
- 50
- 38
IS
- 50
IDM
- 200
IAS
- 52
EAS
135
PD
UNIT
136
45
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mountc
RthJA
50
RthJC
1.1
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
S12-2006-Rev. E, 20-Aug-12
Document Number: 69098
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD50P06-15L
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VGS = 0 V, ID = - 250 μA
- 60
-
-
VDS = VGS, ID = - 250 μA
- 1.5
-
- 2.5
VDS = 0 V, VGS = ± 20 V
-
-
± 100
-
-
-1
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
VDS
VGS(th)
RDS(on)
gfs
VGS = 0 V
VDS = - 60 V
VGS = 0 V
VDS = - 60 V, TJ = 125 °C
-
-
- 50
VGS = 0 V
VDS = - 60 V, TJ = 175 °C
-
-
- 150
VGS = - 10 V
VDS- 5 V
- 50
-
-
VGS = - 10 V
ID = - 17 A
-
0.0135
0.0155
VGS = - 10 V
ID = - 50 A, TJ = 125 °C
-
-
0.026
VGS = - 10 V
ID = - 50 A, TJ = 175 °C
-
-
0.032
VGS = - 4.5 V
ID = - 14 A
VDS = - 15 V, ID = - 17 A
-
0.017
0.020
-
50
-
-
4730
5910
V
nA
μA
A
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
-
485
606
Reverse Transfer Capacitance
Crss
-
330
410
Total Gate Chargec
Qg
-
98
150
Gate-Source
Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay
Qgs
Fall Timec
Source-Drain Diode Ratings and
VGS = - 10 V
VDS = - 25 V, f = 1 MHz
VDS = - 30 V, ID = - 50 A
Qgd
Rg
f = 1 MHz
td(on)
tr
Timec
VGS = 0 V
td(off)
VDD = - 30 V, RL = 0.6
ID - 50 A, VGEN = - 10 V, Rg = 6.0
tf
pF
-
15
23
-
21
32
nC
1.47
2.9
4.42
-
15
18
-
12
16
-
112
125
-
39
48
-
-
- 200
A
-
- 0.8
- 1.5
V
ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 50 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-2006-Rev. E, 20-Aug-12
Document Number: 69098
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD50P06-15L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
80
80
VGS = 10 V thru 4 V
70
70
60
I D - Drain Current (A)
I D - Drain Current (A)
60
50
40
30
3V
20
50
40
30
TC = 125 ° C
20
10
25 ° C
10
- 55 °C
0
0
1
2
3
4
0
0.0
5
0.5
VDS - Drain-to-Source Voltage (V)
1.0
Output Characteristics
2.0
2.5
3.0
3.5
4.0
Transfer Characteristics
0.05
100
R DS(on) - On-Resistance ()
25 °C
TC = - 55 °C
80
gfs - Transconductance (S)
1.5
VGS - Gate-to-Source Voltage (V)
125 °C
60
40
20
0.04
0.03
VGS = 4.5 V
0.02
VGS = 10 V
0.01
0
0
0
10
20
30
40
50
0
60
16
32
VGS - Gate-to-Source Voltage (V)
48
64
80
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
10
6000
Ciss
5000
C - Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
ID = 14.4 A
4000
3000
2000
Coss
1000
8
VDS = 30 V
6
4
2
Crss
0
0
0
10
20
30
40
50
VDS - Drain-to-Source Voltage (V)
Capacitance
S12-2006-Rev. E, 20-Aug-12
60
0
10
20
30
40
50
60
70
80
90
100
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 69098
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD50P06-15L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
2.0
VGS = 10 V
ID = 17 A
I S - Source Current (A)
1.6
(Normalized)
R DS(on) - On-Resistance
1.8
1.4
1.2
1.0
TJ = 150 °C
TJ = 25 °C
10
0.8
0.6
- 50
1
- 25
0
25
50
75
100
125
150
0.0
175
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
1.5
Source Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
100
100 μs
ID - Drain Current (A)
Limited by R DS(on)*
ID Limited
10
1 ms
10 ms, 100 ms, 1 s, 10 s, DC
1
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
S12-2006-Rev. E, 20-Aug-12
Document Number: 69098
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD50P06-15L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 50 °C/W
3. TJM - TA = PDMZthJA(t)
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
4. Surface Mounted
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69098.
S12-2006-Rev. E, 20-Aug-12
Document Number: 69098
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
Note
• Dimension L3 is for reference only.
Revision: 02-Sep-13
Document Number: 64424
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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3
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Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 01-Jan-2019
1
Document Number: 91000