AFGHL50T65SQD

Field Stop Trench IGBT 50A, 650V AFGHL50T65SQD Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQD which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in automotive application. www.onsemi.com Features • • • • • • • • • AEC−Q101 Qualified Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A 100% of the Parts are Tested for ILM (Note 2) Fast Switching Tight Parameter Distribution RoHS Compliant 50 A, 650 V, VCESat = 1.6 V C G E Typical Applications • • • • Automotive HEV−EV Onboard Chargers Automotive HEV−EV DC−DC Converters Totem Pole Bridgeless PFC PTC MAXIMUM RATINGS G Rating Symbol Value Unit Collector−to−Emitter Voltage VCES 650 V Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VGES ±20 ±30 V IC 80 50 A Pulsed Collector Current (Note 2) ILM 200 A Pulsed Collector Current (Note 3) ICM 200 A Collector Current (Note 1) @ TC = 25°C @ TC = 100°C Diode Forward Current (Note 1) @ TC = 25°C @ TC = 100°C IF 80 30 IFM 200 A Maximum Power Dissipation @ TC = 25°C @ TC = 100°C PD 268 134 W TJ, TSTG −55 to +175 °C TL 300 °C Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire 2. VCC = 400 V, VGE = 15 V, IC = 200 A, RG = 15 W, Inductive Load 3. Repetitive Rating: pulse width limited by max. Junction temperature © Semiconductor Components Industries, LLC, 2019 January, 2020 − Rev. 1 E 1 TO−247−3L CASE 340CX MARKING DIAGRAM &Z&3&K AFGHL 50T65SQD A Pulsed Diode Maximum Forward Current Operating Junction / Storage Temperature Range C &Z = Assembly Plant Code &3 = 3−Digit Date Code &K = 2−Digit Lot Traceability Code AFGHL50T65SQD = Specific Device Code ORDERING INFORMATION Device AFGHL50T65SQD Package Shipping TO−247−3L 30 Units / Rail Publication Order Number: AFGHL50T65SQD/D AFGHL50T65SQD THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.56 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.25 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Test Conditions Symbol Min Typ Max Unit Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 1 mA BVCES 650 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA − 0.6 − V/°C Parameter OFF CHARACTERISTICS DBVCES DTJ Collector−emitter cut−off current, gate−emitter short−circuited VGE = 0 V, VCE = 650 V ICES − − 250 mA Gate leakage current, collector− emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − ±400 nA VGE = VCE, IC = 50 mA VGE(th) 3.4 4.9 6.4 V VGE = 15 V, IC = 50 A VGE = 15 V, IC = 50 A, TJ = 175°C VCE(sat) − − 1.6 1.95 2.1 − V VCE = 30 V, VGE = 0 V, f = 1 MHz Cies − 3258 − pF Coes − 85 − Cres − 11 − Qg − 102 − Qge − 18 − Qgc − 24 − td(on) − 19 − tr − 11 − td(off) − 87 − tf − 5 − Turn−on switching loss Eon − 0.35 − Turn−off switching loss Eoff − 0.12 − Total switching loss Ets − 0.47 − td(on) − 20 − tr − 28 − td(off) − 81 − tf − 36 − Turn−on switching loss Eon − 0.95 − Turn−off switching loss Eoff − 0.46 − Total switching loss Ets − 1.41 − ON CHARACTERISTICS Gate−emitter threshold voltage Collector−emitter saturation voltage DYNAMIC CHARACTERISTICS Input capacitance Output capacitance Reverse transfer capacitance Gate charge total Gate−to−emitter charge VCE = 400 V, IC = 50 A, VGE = 15 V Gate−to−collector charge nC SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on delay time Rise time Turn−off delay time Fall time TC = 25°C, VCC = 400 V, IC = 25 A, RG = 4.7 W, VGE = 15 V, Inductive Load TC = 25°C, VCC = 400 V, IC = 50 A, RG = 4.7 W, VGE = 15 V, Inductive Load www.onsemi.com 2 ns mJ ns mJ AFGHL50T65SQD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Continued) Parameter Test Conditions Symbol Min Typ Max Unit td(on) − 18 − ns tr − 14 − td(off) − 99 − tf − 7 − Turn−on switching loss Eon − 0.66 − Turn−off switching loss Eoff − 0.3 − Total switching loss Ets − 0.96 − td(on) − 20 − tr − 29 − td(off) − 88 − tf − 46 − Turn−on switching loss Eon − 1.42 − Turn−off switching loss Eoff − 0.65 − Total switching loss Ets − 2.07 − VFM − 2.0 2.6 − 1.7 − SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on delay time Rise time Turn−off delay time Fall time TC = 175°C, VCC = 400 V, IC = 25 A, RG = 4.7 W, VGE = 15 V, Inductive Load TC = 175°C, VCC = 400 V, IC = 50 A, RG = 4.7 W, VGE = 15 V, Inductive Load mJ ns mJ DIODE CHARACTERISTIC Diode Forward Voltage IF = 30 A, TC = 25°C IF = 30 A, TC = 175°C V Reverse Recovery Energy IF = 30 A, dlF/dt = 200 A/ms, TC = 175°C Erec − 50 − mJ Diode Reverse Recovery Time IF = 30 A, dlF/dt = 200 A/ms, TC = 25°C Trr − 30 − ns − 194 − − 42 − − 723 − IF = 30 A, dlF/dt = 200 A/ms, TC = 175°C Diode Reverse Recovery Charge IF = 30 A, dlF/dt = 200 A/ms, TC = 25°C IF = 30 A, dlF/dt = 200 A/ms, TC = 175°C Qrr nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 AFGHL50T65SQD TYPICAL CHARACTERISTICS 200 200 20V T C = 25°C 20V T C = 175°C 15V 15V V GE = 8V 100 50 0 0 1 2 3 V GE = 8V 50 0 1 4 Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 5 Common Emitter V GE = 15V 50 0 1 2 3 100A 50A I C = 25A 1.0 −100 5 4 2.0 Collector−Emitter Voltage, V CE [V] 20 Collector − Emitter Voltage, V CE [V] 12 100A 50A IC = 25A 4 50 100 150 200 20 16 4 0 Figure 4. Saturation Voltage vs. Case Temperature Common Emitter T C = 25°C 8 −50 Collector−Emitter Case Temperature, TC [ ° C] Figure 3. Typical Saturation Voltage Collector − Emitter Voltage, VCE [V] 3 Collector−Emitter Voltage, VCE [V] 100 0 2 Collector−Emitter Voltage, VCE [V] Common Emitter V GE = 15V T C = 25°C T C = 175°C 150 0 10V 100 0 5 4 12V 150 3.0 200 Collector Current, I C [A] Collector Current, I C [A] 10V Collector − Emitter Voltage, VCE [V] Collector Current, I C [A] 12V 150 16 12 IC = 25A 8 50A 100A 4 0 20 8 12 16 Gate−Emitter Voltage, V GE [V] Common Emitter T C = 175°C 4 8 12 16 Gate−Emitter Voltage, V GE [V] Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE www.onsemi.com 4 20 AFGHL50T65SQD TYPICAL CHARACTERISTICS 15 Common Emitter T C = 25°C 10000 Gate − Emitter Voltage, V GE [V] Capacitance [pF] C ies 1000 100 C oes 10 1 C res Common Emitter V GE = 0V, f = 1Mhz T C = 25°C 1 10 400V 300V 9 6 3 0 30 V CC = 200V 12 0 20 Collector−Emitter Voltage, V CE [V] 40 60 80 100 120 Gate Charge, Q g [nC] Figure 7. Capacitance Characteristics Figure 8. Gate Charge 100 1000 tr Switching Time [ns] Switching Time [ns] t d(off) td(on) Common Emitter V CC = 400V, V GE = 15V 100 tf I C = 50A 10 0 10 20 T C = 25°C T C = 25°C T C = 175°C T C = 175°C 30 40 10 50 0 10 Switching Time [ns] Switching Time [ns] Common Emitter V CC = 400V, VGE = 15V, R G = 4.7 W T C = 25°C T C = 175°C 60 85 110 Collector Current, I C [A] 30 40 50 tf 100 t d(off) 10 Common Emitter V CC = 400V, V GE = 15V, RG = 4.7 W T C = 25°C T C = 175°C t d(on) 35 20 Figure 10. Turn−Off Characteristics vs. Gate Resistance tr 10 10 = 15V, Gate Resistance, R g [ W ] Figure 9. Turn−On Characteristics vs. Gate Resistance 100 GE I C = 50A Gate Resistance, R g [ W ] 200 Common Emitter V CC = 400V, V 1 0 135 Figure 11. Turn−On Characteristics vs. Collector Current 25 50 75 100 Collector Current, I C [A] 125 Figure 12. Turn−Off Characteristics vs. Collector Current www.onsemi.com 5 150 AFGHL50T65SQD TYPICAL CHARACTERISTICS 10 10 E on on Switching Loss [mJ] Switching Loss [mJ] E 1 E 0.1 0 10 1 E off Common Emitter V CC = 400V, V GE = 15V, Common Emitter V CC = 400V, V GE = 15V, off R G = 4.7 W I C = 50A 20 T C = 25℃ T C = 25°C T C = 175℃ T C = 175°C 30 40 0.1 0 50 25 50 75 100 125 150 Collector Current, IC [A] Gate Resistance, R g [ W ] Figure 13. Switching Loss vs. Gate Resistance Figure 14. Switching Loss vs. Collector Current 150 300 100 DC 10 ms Forward Current, I F [A] Collector Current, I C [A] 100 100 ms 1ms 10 1 10ms *Notes: 1. T C = 25°C T C=175°C 10 T C =75°C TC =25°C Common Emitter T C = 25°C 2. T J = 175°C 3. Single Pulse 1 0.1 1 T C = 75°C T C = 175°C 0 1000 10 100 Collector − Emitter Voltage, V CE [V] Reverse Recovery Time, t rr [ns] Reverse Recovery Current, I rr [A] 350 T C= 175°C 8 6 di/dt = 200A/uS 4 di/dt = 100A/uS 0 di/dt = 200A/uS di/dt = 100A/uS 0 20 40 60 3 4 5 Figure 16. Forward Characteristics T C = 25°C 2 2 Forward Voltage, VF [V] Figure 15. SOA Characteristics 10 1 80 T C= 175°C 280 210 140 di/dt = 100A/uS di/dt = 200A/uS 70 0 100 T C = 25°C 0 30 60 Forward Current, V F [V] Forward Current, V F [V] Figure 18. Reverse Recovery Time Figure 17. Reverse Recovery Current www.onsemi.com 6 90 AFGHL50T65SQD TYPICAL CHARACTERISTICS Reverse Recovery Charge, Q rr [nC] 1200 T C = 25°C T C= 175°C 900 600 di/dt = 200A/uS 300 di/dt = 100A/uS 0 0 30 60 90 Forward Current, V F [V] Figure 19. Stored Charge Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 Notes: Duty Factor, D = t1/t2 Peak TJ = PDM x ZqJC (t) + TC P DM 0.02 0.01 0.01 t1 Single Pulse 10 −5 t2 10 −4 10 −3 10 −2 10 −1 10 0 10 1 Rectangular Pulse Duration [sec] Figure 20. Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse Notes: Duty Factor, D = t1/t2 Peak TJ = PDM x ZqJC (t) + TC P DM t1 t2 0.001 10 −5 10 −4 10 −3 10 −2 10 −1 Rectangular Pulse Duration [sec] Figure 21. Transient Thermal Impedance of Diode www.onsemi.com 7 10 0 10 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative