AFGHL40T65SPD

Field Stop Trench IGBT 40 A, 650 V AFGHL40T65SPD Description Using the novel field stop 3rd generation IGBT technology, AFGHL40T65SPD offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also offers and advantage of outstanding performance in parallel operation. www.onsemi.com VCES Eon VCE(Sat) 650 V 1.16 mJ 1.85 V Features • • • • • • • • • C AEC−Q101 Qualified Low Saturation Voltage: VCE(Sat) = 1.85 V (Typ.) @ IC = 40 A 100% Of The Part Are Dynamically Tested (Note 1) Short Circuit Ruggedness > 5 mS @ 25°C Maximum Junction Temperature: TJ = 175°C Fast Switching Tight Parameter Distribution Positive Temperature Co−efficient for Easy Parallel Operating Co−Packed With Soft And Fast Recovery Diode Typical Applications • • • • • G E G On−board Charger Air Conditioner Compressor PTC Heater Motor Drivers Other Automotive Power−Train Applications C E TO−247−3L CASE 340CX MARKING DIAGRAM &Y&Z&3&K AFGHL 40T65SPD $Y &Z &3 &K AFGHL40T65SPD = ON Semiconductor Logo = Assembly Plant Code = 3−Digit Data code = 2−Digit Lot Traceability code = Specific Device Code ORDERING INFORMATION Device Package AFGHL40T65SPD TO−247−3L © Semiconductor Components Industries, LLC, 2017 September, 2020 − Rev. 5 1 Shipping 30 Units / Rail Publication Order Number: AFGHL40T65SPD/D AFGHL40T65SPD ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Ratings Units VCES Collector to Emitter Voltage 650 V VGES Gate to Emitter Voltage ±20 V Transient Gate to Emitter Voltage ±30 V Collector Current @ TC = 25°C 80 A Collector Current @ TC = 100°C 40 Pulsed Collector Current (Note 2) 120 A Diode Forward Current @ TC = 25°C 40 A Diode Forward Current @ TC = 100°C 20 IFM Pulsed Diode Maximum Forward Current (Note 2) 120 A PD Maximum Power Dissipation @ TC = 25°C 267 W Maximum Power Dissipation @ TC = 100°C 134 IC ICM IF SCWT Description 5 ms TJ Short Circuit Withstand Time @ TC = 25°C Operating Junction Temperature −55 to +175 °C Tstg Storage Temperature Range −55 to +175 °C TL Maximum Lead Temp. For soldering Purposes, ⅛” from case for 5 seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 20 W, Inductive Load. 2. Repetitive rating: pulse width limited by max. Junction temperature. THERMAL CHARACTERISTICS Symbol Rating Max. Units RqJC Thermal Resistance Junction to Case, for IGBT 0.43 _C/W RqJC Thermal Resistance Junction to Case, for Diode 1.69 _C/W RqJA Thermal Resistance Junction to Ambient 40 _C/W www.onsemi.com 2 AFGHL40T65SPD ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Test Conditions Symbol Min. Typ. Max. Unit BVCES 650 − − V − 0.6 − V/_C OFF CHARACTERISTICS Collector−emitter Breakdown Voltage, Gate−emitter Short−circuited VGE = 0 V, IC = 1mA Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1mA Collector−emitter Cut−off Current, Gate−emitter Short−circuited VGE = 0 V, VCE = 650 V VGE = 0 V, VCE = 650 V, TJ = 175_C ICES − − − 750 250 − mA Gate Leakage Current, Collector−emitter Short−circuited VGE = 20 V, VCE = 0 V IGES − − ±400 nA Gate−emitter Threshold Voltage VGE = VCE, IC = 40 mA VGE(th) 4.0 5.0 7.5 V Collector−emitter Saturation Voltage VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175_C VCE(sat) 1.4 − 1.85 2.51 2.4 − V pF ON CHARACTERISTICS DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Cies − 1518 − Output Capacitance Coes − 91 − Reverse Transfer Capacitance Cres − 15 − Qg − 36 − Gate to Emitter Charge Qge − 11 − Gate to Collector Charge Qgc − 12 − td(on) − 18 − tr − 42 − td(off) − 35 − tf − 10 − Turn−on Switching Loss Eon − 1.16 − Turn−off Switching Loss Eoff − 0.27 − Total Switching Loss Ets − 1.43 − td(on) − 16 − tr − 40 − td(off) − 37 − tf − 11 − Turn−on Switching Loss Eon − 1.59 − Turn−off Switching Loss Eoff − 0.42 − Total Switching Loss Ets − 2.01 − Input Capacitance Gate Charge Total VCE = 400 V, IC = 40 V, VGE = 15 V nC SWITCHING CHARACTERISTICS Turn−on Delay Time Rise Time Turn−off Delay Time Fall Time Turn−on Delay Time Rise Time Turn−off Delay Time TC = 25_C VCC = 400 V, IC = 40 A Rg = 6 W VGE = 15 V Inductive Load, TC = 25_C TC = 175_C VCC = 400 V, IC = 40 A Rg = 6 W VGE = 15 V Inductive Load Fall Time ns mJ ns mJ DIODE CHARACTERISTICS Forward Voltage IF = 20 A IF = 20 A, TJ = 175_C VF 1.4 − 2.2 1.9 2.7 − V Reverse Recovery Time TJ = 25_C IF = 20 A, diF/dt = 200 A/ms trr − 35 − ns Qrr − 58 − mC trr − 214 − ns Qrr − 776 − mC Erec − 51 − mJ Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge TJ = 175_C IF = 20 A, diF/dt = 200 A/ms Reverse Recovery Energy Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 AFGHL40T65SPD TYPICAL PERFORMANCE CHARACTERISTICS o TC = 25 C 120 20V 20V 12V 90 10V 60 30 VGE = 8V 0 0 o T C = 175 C 15V Collector Current, I C [A] Collector Current, I C [A] 120 1 2 3 4 5 Collector−Emitter Voltage, VCE[V] 15V 90 12V 60 10V 30 VGE = 8V 0 6 Figure 1. Typical Output Characteristics 0 120 Common Emitter VCE = 20V T C = 25 oC 90 Collector Current, I C [A] Collector Current, I C [A] Common Emitter VGE = 15V o T C = 175 C 60 30 0 1 2 3 4 5 Collector−Emitter Voltage, VCE [V] o TC = 25 C 90 T = 175o C C 60 30 0 6 Figure 3. Typical Saturation Voltage Characteristics Common Emitter VGE = 15V 4 3 2 2 4 6 8 10 12 Gate−Emitter Voltage,VGE [V] 14 Figure 4. Transfer Characteristics Collector−Emitter Voltage , VCE [V] Collector−Emitter Voltage, VCE [V] 5 6 Figure 2. Typical Output Characteristics 120 0 1 2 3 4 5 Collector−Emitter Voltage, VCE[V] 80A 40A Common Emitter o T C = −40 C I C = 20A 80A 40A I C = 20A 1 −100 −50 0 50 100 150 200 o Collector−Emitter Case Temperature, TC[ C] Gate−Emitter Voltage, VGE [V] Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE www.onsemi.com 4 16 AFGHL40T65SPD TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 20 Common Emitter o T C = 25 C 16 12 8 I C = 20A 40A 80A 4 0 4 8 12 16 Gate−Emitter Voltage, VGE [V] T C = 175 C 16 12 8 0 20 20 Figure 8. Saturation Voltage vs. VGE Common Emitter o Gate−Emitter Voltage, VGE [V] o C ies 1000 Coes 100 Cres 11 0 Collector−Emitter Voltage, VCE [V] TC = 25 C VCC = 200V 12 300V 400V 9 6 3 0 30 Figure 9. Capacitance Characteristics 0 10 20 30 Gate Charge, Q g [nC] 40 Figure 10. Gate charge Characteristics 300 200 100 100 Collector Current, I C [A] 10m s 100m s 10 1ms 10 ms DC 1 *Notes: o 1. TC = 25 C 10 o 0.1 80A 8 12 16 Gate−Emitter Voltage, VGE [V] Common Emitter VGE = 0V, f = 1MHz TC = 25 C Capacitance [pF] 4 40A 15 10000 10 I C = 20A 4 Figure 7. Saturation Voltage vs. VGE Collector Current, I c [A] Common Emitter o Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage , V CE [V] 20 Safe Operating Area 2. TJ = 175 C 3. Single Pulse 1 o 1 10 100 1000 Collector−Emitter Voltage, VCE [V] VGE = 15V, TC = 175 C 1 10 100 Collector−Emitter Voltage, VCE [V] Figure 11. SOA Characteristics Figure 12. Turn off Switching SOA Characteristics www.onsemi.com 5 1000 AFGHL40T65SPD TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 200 1000 Common Emitter VCC = 400V, VGE = 15V I C = 40A 100 Switching Time [ns] Switching Time [ns] o T C = 25 C tr td(on) 10 Common Emitter VCC = 400V, VGE = 15V I C = 40A o T C = 175 C 100 td(off) tf o T C = 25 C o T C = 175 C 1 0 10 20 30 40 Gate Resistance, RG [W] 10 50 0 40 50 1000 Common Emitter VGE = 15V, RG = 6W Common Emitter VGE = 15V, RG = 6W o TC = 25oC TC = 175 C 100 TC = 25 C tr o Switching Time [ns] Switching Time [ns] 30 Figure 14. Turn−off Characteristics vs. Gate Resistance 200 td(on) 10 5 20 40 60 100 TC = 175oC tf td(off) 10 1 20 80 Collector Current, I C [A] 40 60 80 Collector Current, I C [A] Figure 15. Turn−on Characteristics vs. Collector Current Figure 16. Turn−off Characteristics vs. Collector Current 20000 20000 Common Emitter VCC = 400V, VGE = 15V 10000 10000 IC = 40A o o TC = 175 C Eon Eoff 1000 0 Common Emitter VGE = 15V, RG = 6W TC = 25 C TC = 25oC Switching Loss [uJ] Switching Loss [uJ] 20 Gate Resistance, R G [ W] Figure 13. Turn−on Characteristics vs. Gate Resistance 100 10 10 20 30 40 Gate Resistance, R G [W] Eoff 1000 100 50 Eon o TC = 175 C 30 60 Collector Current, IC [A] Figure 17. Switching Loss vs Gate Resistance Figure 18. Switching Loss vs Collector Current www.onsemi.com 6 AFGHL40T65SPD TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 200 10000 o TJ = 125o C o 10 T J = 175 C o T C = 25 C o T C = 75 C o o T J = 75 C T C = 125 C o 1 T C = 175 C 1000 Reverse Current, I R [m A] Forward Current, I F [A] 100 1 o TC = 125 C 10 1 o T C = 25 C 0.1 o TJ = 25 C 0 100 T C = 175 C 2 3 4 Forward Voltage, VF [V] 0.01 50 5 Figure 19. Forward Characteristics 300 o o TC = 25 C T C = 25 C o TC = 175 C 600 400 di/dt = 200A/ms di/dt = 100A/m s 200 0 0 10 20 30 40 250 T C = 175o C 150 di/dt = 200A/m s 50 Reverse Recovery Currnet,rrI [A] o di/dt = 200A/m s 6 di/dt = 100A/m s 4 di/dt = 200A/ms 2 di/dt = 100A/ms 0 0 10 20 30 Forward Current, I F [A] 10 20 30 40 Figure 22. Reverse Recovery Time TC = 25 C o 0 Forward Current, I F [A] Figure 21. Stored Charge TC = 175 C di/dt = 100A/ m s 100 0 50 --- 200 Forward Current, I F [A] 8 600 650 Figure 20. Reverse Current Reverse Recovery Time, t rr [ns] Stored Recovery Charge, Q rr [nC] 800 200 400 Reverse Voltage, V R [V] 40 Figure 23. Reverse Recovery Current www.onsemi.com 7 50 AFGHL40T65SPD TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Thermal Response [Zthjc] 1 0.5 0.1 0.01 0.2 0.1 0.0 0.0 0.0 Single Pulse 1E−3 10−5 10−4 10−3 10−2 10−1 100 101 102 101 102 Rectangular Pulse Duration [s] Figure 24. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 10 1 0.1 0.5 0.2 0.1 0.0 0.0 0.0 Single Pulse 0.01 1E−3 10−5 10−4 10−3 10−2 10−1 100 Rectangular Pulse Duration [s] Figure 25. Transient Thermal Impedance of Diode www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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