AFGHL75T65SQ

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Other names and brands may be claimed as the property of others. Field Stop Trench IGBT 650 V, 75 A, TO247 AFGHL75T65SQ Using the novel field stop 4th generation IGBT technology, AFGHL75T65SQ offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, which does not require reverse recovery specification. Features • • • • • • • • Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A 100% of the Parts are Tested for ILM (Note 2) Fast Switching Tight Parameter Distribution AEC−Q101 Qualified and PPAP Capable www.onsemi.com 75 A, 650 V VCESat = 1.6 V (Typ.) C G E Typical Applications • • • • • Automotive On & Off Board Chargers DC−DC Converters PFC Industrial Inverter G MAXIMUM RATINGS Rating Symbol Value VCES 650 V Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VGES ±20 ±30 V IC 80 75 A Pulsed Collector Current (Note 2) ILM 300 A Pulsed Collector Current (Note 3) ICM 300 A PD 375 188 W Operating Junction / Storage Temperature Range TJ, TSTG −55 to +175 °C Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 10 seconds TL 265 °C Maximum Power Dissipation @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C E Unit Collector−to−Emitter Voltage Collector Current (Note 1) C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limited by bond wire 2. VCC = 400 V, VGE = 15 V, IC = 300 A, RG = 15 W, Inductive Load, 100% of the Parts are Tested. 3. Repetitive Rating: pulse width limited by max. Junction temperature MARKING DIAGRAM AYWWZZ AFGHL 75T65SQ A YWW ZZ AFGHL75T65SQ Device July, 2020 − Rev. 0 1 = Assembly Location = 3−Digit Date Code = 2−Digit Lot Traceability Code = Specific Device Code ORDERING INFORMATION AFGHL75T65SQ © Semiconductor Components Industries, LLC, 2020 TO−247−3LD CASE 340CX Package Shipping TO−247−3L 30 Units / Rail Publication Order Number: AFGHL75T65SQ/D AFGHL75T65SQ THERMAL CHARACTERISTICS Symbol Max Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.4 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Conditions Symbol Min Typ Max Unit Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 1 mA BVCES 650 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA − 0.6 − V/°C OFF CHARACTERISTICS DBVCES DTJ Collector−emitter cut−off current, gate−emitter short−circuited VGE = 0 V, VCE = 650 V ICES − − 250 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − ±400 nA VGE = VCE, IC = 75 mA VGE(th) 3.4 4.9 6.4 V VGE = 15 V, IC = 75 A VGE = 15 V, IC = 75 A, TJ = 175°C VCE(sat) − − 1.6 2.0 2.1 − V VCE = 30 V, VGE = 0 V, f = 1 MHz Cies − 4574 − pF Coes − 289.4 − Cres − 11.2 − Qg − 139 − Qge − 25 − Qgc − 33 − TC = 25°C, VCC = 400 V, IC = 37.5 A, RG = 4.7 W, VGE = 15 V, Inductive Load Energy losses include “tail” and diode reverse recovery. Diode from AFGHL75T65SQD. td(on) − 23 − tr − 17 − td(off) − 112 − tf − 8 − Eon − 0.61 − Eoff − 0.21 − Ets − 0.82 − TC = 25°C, VCC = 400 V, IC = 75 A, RG = 4.7 W, VGE = 15 V, Inductive Load Energy losses include “tail” and diode reverse recovery. Diode from AFGHL75T65SQD. td(on) − 25 − tr − 46 − td(off) − 106 − tf − 67 − Eon − 1.86 − Eoff − 1.13 − Ets − 2.99 − ON CHARACTERISTICS Gate−emitter threshold voltage Collector−emitter saturation voltage DYNAMIC CHARACTERISTICS Input capacitance Output capacitance Reverse transfer capacitance VCE = 400 V, IC = 75 A, VGE = 15 V Gate charge total Gate−to−emitter charge Gate−to−collector charge nC SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss Turn−off switching loss Total switching loss Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss Turn−off switching loss Total switching loss www.onsemi.com 2 ns mJ ns mJ AFGHL75T65SQ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Conditions Symbol Min Typ Max Unit td(on) − 21 − ns tr − 19 − td(off) − 126 − tf − 7 − Eon − 1.20 − Eoff − 0.41 − Ets − 1.61 − td(on) − 24 − tr − 46 − td(off) − 115 − tf − 72 − Eon − 2.84 − Eoff − 1.35 − Ets − 4.20 − SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss Turn−off switching loss TC = 175°C, VCC = 400 V, IC = 37.5 A, RG = 4.7 W, VGE = 15 V, Inductive Load Energy losses include “tail” and diode reverse recovery. Diode from AFGHL75T65SQD. Total switching loss Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss Turn−off switching loss TC = 175°C, VCC = 400 V, IC = 75 A, RG = 4.7 W, VGE = 15 V, Inductive Load Energy losses include “tail” and diode reverse recovery. Diode from AFGHL75T65SQD. Total switching loss mJ ns mJ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 AFGHL75T65SQ TYPICAL CHARACTERISTICS 20 V TC = 25°C 240 300 10 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 300 VGE = 8 V 15 V 12 V 180 120 60 0 0 1 2 3 4 60 0 1 2 Common Emitter VCE = 20 V 60 30 TC = 175°C 0 3 4 Figure 2. Typical Output Characteristics (Tc = 1755C) IC, COLLECTOR CURRENT (A) VGE, GATE−EMITTER VOLTAGE (V) 120 Figure 1. Typical Output Characteristics (Tc = 255C) 2 TC = 25°C 4 6 8 5 TC = 25°C TC = 175°C 240 180 120 60 0 10 Common Emitter VGE = 15 V 0 1 2 3 4 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Transfer Characteristics Figure 4. Typical Saturation Voltage Characteristics 5 400 PTOT, POWR DISSIPATION (W) 100 IC, COLLECTOR CURRENT (A) VGE = 8 V VCE, COLLECTOR−EMITTER VOLTAGE (V) 90 80 60 40 20 0 12 V 180 300 120 10 V 15 V VCE, COLLECTOR−EMITTER VOLTAGE (V) 150 0 240 0 5 20 V TC = 175°C 25 50 75 100 125 150 350 300 250 200 150 100 50 0 175 25 50 75 100 125 150 175 TC, COLLECTOR−EMITTER CASE TEMPERATURE (°C) TC, COLLECTOR−EMITTER CASE TEMPERATURE (°C) Figure 5. Collector Current Derating Figure 6. Power Dissipation www.onsemi.com 4 AFGHL75T65SQ VCE, COLLECTOR−EMITTER VOLTAGE (V) 3.0 150 A Common Emitter VGE = 15 V 2.5 75 A 2.0 1.5 IC = 40 A 1.0 −100 −50 0 50 100 150 200 Common Emitter TC = 25°C 16 12 8 150 A 75 A 4 0 IC = 37.5 A 4 8 20 Figure 8. Saturation Voltage vs. VGE (Tc = 255C) Common Emitter TC = 175°C 12 150 A 8 75 A 4 IC = 37.5 A 4 8 12 16 20 20 Common Emitter TC = −40°C 16 12 8 150 A 75 A 4 0 IC = 37.5 A 4 8 20 Figure 9. Saturation Voltage vs. VGE (Tc = 1755C) Figure 10. Saturation Voltage vs. VGE (Tc = −405C) VGE, GATE−EMITTER VOLTAGE (V) Cies 1K Coes 100 Cres Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 1 16 VGE, GATE−EMITTER VOLTAGE (V) 10K 10 12 VGE, GATE−EMITTER VOLTAGE (V) 15 CAPACITANCE (pF) 16 Figure 7. Saturation Voltage vs. Case Temperature at Variant Current Level 16 1 12 VGE, GATE−EMITTER VOLTAGE (V) 20 0 20 TC, COLLECTOR−EMITTER CASE TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS 10 30 Common Emitter TC = 25°C 12 VCC = 200 V 9 300 V 400 V 6 3 0 0 30 60 90 120 VCE, COLLECTOR−EMITTER VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 11. Capacitance Characteristics Figure 12. Gate Charge Characteristic (Tc = 255C) www.onsemi.com 5 150 AFGHL75T65SQ TYPICAL CHARACTERISTICS 1000 200 TC = 25°C TC = 175°C 100 SWITCHING TIME (ns) SWITCHNG TIME (ns) TC = 25°C TC = 175°C tr td(on) 10 Common Emitter VCC = 400 V, VGE = 15 V RG = 4.7 W 0 10 20 30 40 td(off) 100 tf 10 50 Common Emitter VCC = 400 V, VGE = 15 V IC = 75 A 0 10 Figure 14. Turn−Off Characteristics vs. Gate Resistance SWITCHING LOSS (mJ) SWITCHING TIME (ns) td(on) 10 Common Emitter VCC = 400 V, VGE = 15 V RG = 4.7 W 30 60 90 120 TC = 25°C TC = 175°C tf 10 Common Emitter VCC = 400 V, VGE = 15 V RG = 4.7 W 0 30 60 90 120 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 15. Turn−On Characteristics vs. Collector Current Figure 16. Turn−Off Characteristics vs. Collector Current 10K TC = 25°C TC = 175°C 5K Eon Eoff 0 td(off) 100 1 150 SWITCHING LOSS (mJ) SWITCHING TIME (ns) tr 100 500 50 Figure 13. Turn−On Characteristics vs. Gate Resistance 1000 10K 40 Rg, GATE RESISTANCE (W) TC = 25°C TC = 175°C 0 30 Rg, GATE RESISTANCE (W) 1K 1 20 10 Common Emitter VCC = 400 V, VGE = 15 V IC = 75 A 20 30 40 TC = 25°C TC = 175°C Eon 1K Eoff 100 10 50 Common Emitter VCC = 400 V, VGE = 15 V RG = 4.7 W 0 30 60 90 120 Rg, GATE RESISTANCE (W) IC, COLLECTOR CURRENT (A) Figure 17. Switching Loss vs. Gate Resistance Figure 18. Switching Loss vs. Collector Current www.onsemi.com 6 150 150 AFGHL75T65SQ TYPICAL CHARACTERISTICS IC, COLLECTOR CURRENT (A) 500 10 ms 100 100 ms 10 1 ms 10 ms 1 0.1 Single Pulse TC = 25°C TJ = 175°C 1 DC 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 19. SOA Characteristics (FBSOA) THERMAL RESPONSE (Zthjc) 1 0.5 0.1 0.2 0.1 0.05 Single Pulse P DM 0.01 0.001 0.02 t1 0.01 0.0001 Peak TJ = PDM x ZqJC + TC Duty Factor, D = t1/t2 t2 0.001 0.01 0.1 1 RECTANGULAR PULSE DURATION (sec) Figure 20. Transient Thermal Impedance of IGBT www.onsemi.com 7 10 100 AFGHL75T65SQ PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE O www.onsemi.com 8 AFGHL75T65SQ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 9 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative