AFGHL75T65SQDT

Field Stop Trench IGBT 650 V, 75 A AFGHL75T65SQDT Using the novel field stop 4th generation IGBT technology and the Stealth Diode technology, AFGHL75T65SQDT offers the optimum performance with both low conduction and switching losses for a high efficiency operation in various applications, especially totem pole bridgeless PFC and DCDC block as well. www.onsemi.com 75 A, 650 V VCESat = 1.6 V Features • • • • • • • • • AEC−Q101 Qualified Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A 100% of the Parts are Tested for ILM (Note 2) Fast Switching Tight Parameter Distribution RoHS Compliant C G E Typical Applications • Automotive HEV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters • Totem Pole Bridgeless PFC G MAXIMUM RATINGS Rating Symbol Value Unit Collector−to−Emitter Voltage VCES 650 V Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VGES ±20 ±30 V IC 80 75 A Pulsed Collector Current (Note 2) ILM 300 A Pulsed Collector Current (Note 3) ICM 300 A IF 80 75 A IFM(2) 300 A PD 375 188 W TJ, TSTG −55 to +175 °C TL 300 °C Collector Current (Note 1) Diode Forward Current @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C Pulsed Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25°C @ TC = 100°C Operating Junction / Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 5 seconds November, 2019 − Rev. 0 E TO−247−3L CASE 340CX MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire 2. VCC = 400 V, VGE = 15 V, IC = 300 A, RG = 17 W, Inductive Load 3. Repetitive Rating: pulse width limited by max. Junction temperature © Semiconductor Components Industries, LLC, 2019 C 1 &Y&Z&3&K AFGHL 75T65SQDT &Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = 3−Digit Data Code &K = 2−Digit Lot Traceability Code AFGHL75T65SQDT = Specific Device Code ORDERING INFORMATION Device AFGHL75T65SQDT Package Shipping TO−247−3L 30 Units / Rail Publication Order Number: AFGHL75T65SQDT/D AFGHL75T65SQDT THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.4 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.65 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Test Conditions Symbol Min Typ Max Unit Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 1 mA BVCES 650 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA − 0.6 − V/°C Parameter OFF CHARACTERISTICS DBVCES DTJ Collector−emitter cut−off current, gate−emitter short−circuited VGE = 0 V, VCE = 650 V ICES − − 250 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − ±400 nA VGE = VCE, IC = 75 mA VGE(th) 3.4 4.9 6.4 V VGE = 15 V, IC = 75 A VGE = 15 V, IC = 75 A, TJ = 175°C VCE(sat) − − 1.6 1.95 2.1 − V VCE = 30 V, VGE = 0 V, f = 1 MHz Cies − 4617 − pF Coes − 152 − Cres − 13 − Qg − 136 − Qge − 25 − Qgc − 32 − td(on) − 21 − tr − 16 − td(off) − 113 − tf − 8 − Turn−on switching loss Eon − 0.77 − Turn−off switching loss Eoff − 0.23 − Total switching loss Ets − 1.0 − td(on) − 24 − tr − 44 − td(off) − 106 − tf − 68 − Turn−on switching loss Eon − 2.12 − Turn−off switching loss Eoff − 1.14 − Total switching loss Ets − 3.26 − ON CHARACTERISTICS Gate−emitter threshold voltage Collector−emitter saturation voltage DYNAMIC CHARACTERISTICS Input capacitance Output capacitance Reverse transfer capacitance VCE = 400 V, IC = 75 A, VGE = 15 V Gate charge total Gate−to−emitter charge Gate−to−collector charge nC SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on delay time Rise time Turn−off delay time Fall time TC = 25°C, VCC = 400 V, IC = 37.5 A, RG = 4.7 W, VGE = 15 V, Inductive Load TC = 25°C, VCC = 400 V, IC = 75 A, RG = 4.7 W, VGE = 15 V, Inductive Load www.onsemi.com 2 ns mJ ns mJ AFGHL75T65SQDT ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Conditions Symbol Min Typ Max Unit td(on) − 20 − ns tr − 19 − td(off) − 124 − tf − 7.7 − Turn−on switching loss Eon − 1.52 − Turn−off switching loss Eoff − 0.43 − Total switching loss Ets − 1.95 − td(on) − 24 − tr − 45 − td(off) − 114 − tf − 76 − Turn−on switching loss Eon − 3.32 − Turn−off switching loss Eoff − 1.42 − Total switching loss Ets − 4.74 − VFM − 1.65 2.1 − 1.55 − SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on delay time Rise time Turn−off delay time Fall time TC = 175°C, VCC = 400 V, IC = 37.5 A, RG = 4.7 W, VGE = 15 V, Inductive Load TC = 175°C, VCC = 400 V, IC = 75 A, RG = 4.7 W, VGE = 15 V, Inductive Load mJ ns mJ DIODE CHARACTERISTICS Diode Forward Voltage IF = 75 A, TC = 25°C IF = 75 A, TC = 175°C V Reverse Recovery Energy IF = 75 A, dIF/dt = 200 A/s, TC = 175°C Erec − 150 − mJ Diode Reverse Recovery Time IF = 75 A, dIF/dt = 200 A/s, TC = 25°C Trr − 75 − ns − 328 − − 173 − − 2193 − IF = 75 A, dIF/dt = 200 A/s, TC = 175°C Diode Reverse Recovery Charge IF = 75 A, dIF/dt = 200 A/s, TC = 25°C IF = 75 A, dIF/dt = 200 A/s, TC = 175°C Qrr nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 AFGHL75T65SQDT TYPICAL CHARACTERISTICS 300 TC = 255C 300 20V 20V TC = 1755C 15V 12V 240 240 Collector Current, I C [A] Collector Current, IC [A] 15V 10V VGE = 8V 180 120 60 0 12V 10V 180 VGE = 8V 120 60 0 0 1 2 3 4 Collector−Emitter Voltage, VCE [V] 0 5 Figure 1. Typical Output Characteristics (TJ = 255C) Collector −Emitter Voltage, VCE [V] Collector Current, I C [A] 180 120 60 0 1 2 3 4 Collector−Emitter Voltage, VCE [V] Common Emitter V GE = 15V 150A 2.0 75A IC = 40A 1.0 −100 5 −50 0 50 100 Collector −Emitter Voltage, VCE [V] Common Emitter T C = 255C 16 12 8 150A 75A 4 IC = 40A 4 200 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 20 20 150 Collector−Emitter Case Temperature, TC [ 5C] Figure 3. Typical Saturation Voltage Characteristics Collector −Emitter Voltage, V CE [V] 5 Figure 2. Typical Output Characteristics (TJ = 1755C) Common Emitter V GE = 15V T C = 255C T C = 1755C 240 0 2 3 4 Collector−Emitter Voltage, V CE [V] 3.0 300 0 1 8 12 16 Gate−Emitter Voltage, VGE [V] 20 Figure 5. Saturation Voltage vs. VGE (TJ = 255C) Common Emitter TC = 1755C 16 12 8 150A 75A 4 0 IC = 40A 4 8 12 16 Gate−Emitter Voltage, VGE [V] Figure 6. Saturation Voltage vs. VGE (TJ = 1755C) www.onsemi.com 4 20 AFGHL75T65SQDT TYPICAL CHARACTERISTICS (continued) Capacitance [pF] 10000 Gate − Emitter Voltage, VGE [V] 15 C ies 1000 C oes 100 C res 10 Common Emitter V GE = 0V, f = 1Mhz T C = 255C 1 1 10 Collector−Emitter Voltage, V CE [V] Common Emitter T C = 255C 300V 400V 9 6 3 0 30 V CC = 200V 12 0 Figure 7. Capacitance Characteristics 30 60 90 Gate Charge, Q g [nC] 120 150 Figure 8. Gate Charge Characteristics 1000 200 Switching Time [ns] Switching Time [ns] t d(off) tr td(on) Common Emitter VCC = 400V, VGE = 15V I C = 75A TC = 255C 0 10 20 30 Gate Resistance, R g [ W ] tf Common Emitter V CC = 400V, V GE = 15V, I C = 75A TC = 255C TC = 1755C 20 100 TC = 1755C 10 50 40 0 10 Figure 9. Turn−On Characteristics vs. Gate Resistance tr td(on) 10 1 0 30 50 1000 Common Emitter V CC = 400V, VGE = 15V, RG = 4.7 W TC = 255C TC = 1755C 100 40 Figure 10. Turn−Off Characteristics vs. Gate Resistance Switching Time [ns] Switching Time [ns] 1000 20 30 Gate Resistance, R g [ W ] 60 90 Collector Current, I C [A] 120 150 td(off) 100 tf 10 1 Figure 11. Turn−On Characteristics vs. Collector Current Common Emitter VCC = 400V, V GE = 15V, RG = 4.7 W T C = 255C T C = 1755C 0 30 60 90 120 Collector Current, I C [A] Figure 12. Turn−Off Characteristics vs. Collector Current www.onsemi.com 5 150 AFGHL75T65SQDT TYPICAL CHARACTERISTICS (continued) 10000 10000 E on Common Emitter V CC = 400V, V GE = 15V, IC = 75A T C = 255C T C = 1755C E off 1000 0 10 Switching Loss [uJ] Switching Loss [uJ] E on 20 30 Gate Resistance, R g [ W ] 1000 E off Common Emitter V CC = 400V, V GE = 15V, R G = 4.7 W T C = 255C 0 50 40 T C = 1755C 100 Figure 13. Switching Loss vs. Gate Resistance 10 ms 150 100 Forward Current, I F [A] Collector Current, I C [A] DC 100 ms 1ms 10ms 10 1 *Notes: 1. TC = 255C 2. TJ = 1755C 3. Single Pulse 1 TC=175 5C TC =25 5C 10 TC =75 5 C 20 10 100 Collector − Emitter Voltage, VCE [V] TC = 1755C 1 1000 0 500 Reverse Recovery Time, t rr [ns] TC = 1755C 16 di/dt = 200A/uS 12 di/dt = 100A/uS di/dt = 200A/uS 4 di/dt = 100A/uS 0 20 40 60 1 2 3 Forward Voltage, VF [V] 4 5 Figure 16. Forward Characteristics T C = 255C 8 Common Emitter TC = 255C TC = 755C Figure 15. SOA Characteristics Reverse Recovery Current, Irr [A] 120 300 100 0 60 90 Collector Current, I C [A] Figure 14. Switching Loss vs. Collector Current 500 0.1 30 T C = 1755C 400 300 200 di/dt = 200A/uS di/dt = 100A/uS 100 0 80 T C = 255C 0 Forward Current, VF [V] 20 40 60 Forward Current, VF [V] Figure 18. Reverse Recovery Time Stored Charge Figure 17. Reverse Recovery Current www.onsemi.com 6 80 AFGHL75T65SQDT Reverse Recovery Charge, Q rr [nC] TYPICAL CHARACTERISTICS (continued) 2500 T C = 255C TC = 1755C 2000 1500 1000 di/dt = 100A/uS di/dt = 200A/uS 500 0 0 20 40 60 Forward Current, VF [V] 80 Figure 19. Stored Charge Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 P DM 0.05 t1 0.02 0.01 0.01 Single Pulse 10 −5 10 −4 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + Tc 10 −3 10 −2 10 −1 10 0 10 1 Rectangular Pulse Duration [sec] Figure 20. Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM t1 Single Pulse t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + Tc 0.001 10 0.00001 −5 10 −4 10 −3 10 −2 10 −1 Rectangular Pulse Duration [sec] Figure 21. Transient Thermal Impedance of Diode www.onsemi.com 7 0 10 1 10 10 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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