AFGHL75T65SQDC

IGBT – Hybrid, Field Stop, Trench 650 V, 75 A, TO247 AFGHL75T65SQDC Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and Inverter. Features • • • • • • • • • Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A 100% of the Parts are Tested for ILM (Note 2) Fast Switching Tight Parameter Distribution No Reverse Recovery/No Forward Recovery AEC−Q101 Qualified and PPAP Capable • • • • • Automotive On & Off Board Chargers DC−DC Converters PFC Industrial Inverter www.onsemi.com 75 A, 650 V VCESat = 1.6 V (Typ.) C G E Typical Applications G MAXIMUM RATINGS Rating Symbol Value Unit Collector−to−Emitter Voltage VCES 650 V Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VGES ±20 ±30 V IC 80 75 A Pulsed Collector Current (Note 2) ILM 300 A Pulsed Collector Current (Note 3) ICM 300 A IF 35 20 A Pulsed Diode Maximum Forward Current IFM 200 A Maximum Power Dissipation PD 375 188 W Operating Junction / Storage Temperature Range TJ, TSTG −55 to +175 °C Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 10 seconds TL 265 °C Collector Current (Note 1) Diode Forward Current (Note 1) @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limited by bond wire 2. VCC = 400 V, VGE = 15 V, IC = 300 A, RG = 15 W, Inductive Load, 100% of the Parts are Tested. 3. Repetitive Rating: pulse width limited by max. Junction temperature © Semiconductor Components Industries, LLC, 2020 January, 2021 − Rev. 1 C 1 E TO−247−3LD CASE 340CX MARKING DIAGRAM AYWWZZ AFGHL 75T65SQDC A = Assembly Location YWW = 3−Digit Date Code ZZ = 2−Digit Lot Traceability Code AFGHL75T65SQDC = Specific Device Code ORDERING INFORMATION Device Package Shipping AFGHL75T65SQDC TO−247−3L 30 Units / Rail Publication Order Number: AFGHL75T65SQDC/D AFGHL75T65SQDC THERMAL CHARACTERISTICS Symbol Max Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.4 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.55 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Test Conditions Symbol Min Typ Max Unit Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 1 mA BVCES 650 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA − 0.6 − V/°C Parameter OFF CHARACTERISTICS DBVCES DTJ Collector−emitter cut−off current, gate−emitter short−circuited VGE = 0 V, VCE = 650 V ICES − − 250 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − ±400 nA VGE = VCE, IC = 75 mA VGE(th) 3.4 4.9 6.4 V VGE = 15 V, IC = 75 A VGE = 15 V, IC = 75 A, TJ = 175°C VCE(sat) − − 1.6 2.0 2.1 − V VCE = 30 V, VGE = 0 V, f = 1 MHz Cies − 4574 − pF Coes − 289.4 − Cres − 11.2 − Qg − 139 − Qge − 25 − Qgc − 33 − td(on) − 22.4 − tr − 19.2 − td(off) − 116.8 − tf − 9.6 − Turn−on switching loss Eon − 0.48 − Turn−off switching loss Eoff − 0.24 − Total switching loss Ets − 0.72 − td(on) − 24 − tr − 49.6 − td(off) − 107.2 − tf − 70.4 − Turn−on switching loss Eon − 1.68 − Turn−off switching loss Eoff − 1.11 − Total switching loss Ets − 2.79 − ON CHARACTERISTICS Gate−emitter threshold voltage Collector−emitter saturation voltage DYNAMIC CHARACTERISTICS Input capacitance Output capacitance Reverse transfer capacitance Gate charge total Gate−to−emitter charge VCE = 400 V, IC = 75 A, VGE = 15 V Gate−to−collector charge nC SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on delay time Rise time Turn−off delay time Fall time TC = 25°C, VCC = 400 V, IC = 37.5 A, RG = 4.7 W, VGE = 15 V, Inductive Load TC = 25°C, VCC = 400 V, IC = 75 A, RG = 4.7 W, VGE = 15 V, Inductive Load www.onsemi.com 2 ns mJ ns mJ AFGHL75T65SQDC ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Conditions Symbol Min Typ Max Unit td(on) − 20.8 − ns tr − 22.4 − td(off) − 130 − tf − 9.6 − Turn−on switching loss Eon − 0.53 − Turn−off switching loss Eoff − 0.44 − Total switching loss Ets − 0.98 − td(on) − 24 − tr − 49.6 − td(off) − 118 − tf − 78.4 − Turn−on switching loss Eon − 1.76 − Turn−off switching loss Eoff − 1.42 − Total switching loss Ets − 3.19 − VF − 1.45 1.75 − 1.80 − − 110 − − 105 − SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on delay time Rise time Turn−off delay time Fall time TC = 175°C, VCC = 400 V, IC = 37.5 A, RG = 4.7 W, VGE = 15 V, Inductive Load TC = 175°C, VCC = 400 V, IC = 75 A, RG = 4.7 W, VGE = 15 V, Inductive Load mJ ns mJ DIODE CHARACTERISTICS Forward Voltage IF = 20 A IF = 20 A, TJ = 175°C Total Capacitance VR = 400 V, f = 1 MHz VR = 600 V, f = 1 MHz C V pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 AFGHL75T65SQDC TYPICAL CHARACTERISTICS 20 V TC = 25°C 250 15 V 200 300 10 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 300 VGE = 8 V 12 V 150 100 50 0 0 1 2 3 4 100 50 0 1 2 Common Emitter VCE = 20 V 60 30 TC = 25°C 0 3 4 Figure 2. Typical Output Characteristics (Tc = 1755C) IC, COLLECTOR CURRENT (A) VGE, GATE−EMITTER VOLTAGE (V) VGE = 8 V 150 Figure 1. Typical Output Characteristics (Tc = 255C) 2 TC = 175°C 4 6 8 5 TC = 25°C 250 TC = 175°C 200 150 100 Common Emitter VGE = 15 V 50 0 10 0 1 2 3 4 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Transfer Characteristics Figure 4. Typical Saturation Voltage Characteristics 5 400 PTOT, POWR DISSIPATION (W) 100 IC, COLLECTOR CURRENT (A) 12 V VCE, COLLECTOR−EMITTER VOLTAGE (V) 90 80 60 40 20 0 200 300 120 10 V 15 V VCE, COLLECTOR−EMITTER VOLTAGE (V) 150 0 250 0 5 20 V TC = 175°C 25 50 75 100 125 150 350 300 250 200 150 100 50 0 175 25 50 75 100 125 150 175 TC, COLLECTOR−EMITTER CASE TEMPERATURE (°C) TC, COLLECTOR−EMITTER CASE TEMPERATURE (°C) Figure 5. Collector Current Derating Figure 6. Power Dissipation www.onsemi.com 4 AFGHL75T65SQDC VCE, COLLECTOR−EMITTER VOLTAGE (V) 3.0 150 A Common Emitter VGE = 15 V 2.5 75 A 2.0 1.5 IC = 37.5 A 1.0 −100 −50 0 50 100 150 200 Common Emitter TC = 25°C 16 12 8 150 A 75 A 4 0 IC = 37.5 A 4 8 20 Figure 8. Saturation Voltage vs. VGE (Tc = 255C) Common Emitter TC = 175°C 12 150 A 8 75 A 4 IC = 37.5 A 4 8 12 16 20 20 Common Emitter TC = −40°C 16 12 8 150 A 75 A 4 0 IC = 37.5 A 4 8 20 Figure 9. Saturation Voltage vs. VGE (Tc = 1755C) Figure 10. Saturation Voltage vs. VGE (Tc = −405C) VGE, GATE−EMITTER VOLTAGE (V) Cies 1K Coes 100 Cres Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 1 16 VGE, GATE−EMITTER VOLTAGE (V) 10K 10 12 VGE, GATE−EMITTER VOLTAGE (V) 15 CAPACITANCE (pF) 16 Figure 7. Saturation Voltage vs. Case Temperature at Variant Current Level 16 1 12 VGE, GATE−EMITTER VOLTAGE (V) 20 0 20 TC, COLLECTOR−EMITTER CASE TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS 10 30 Common Emitter TC = 25°C 12 VCC = 200 V 9 300 V 400 V 6 3 0 0 30 60 90 120 VCE, COLLECTOR−EMITTER VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 11. Capacitance Characteristics Figure 12. Gate Charge Characteristic (Tc = 255C) www.onsemi.com 5 150 AFGHL75T65SQDC TYPICAL CHARACTERISTICS 1000 1000 TC = 25°C TC = 175°C 100 SWITCHING TIME (ns) SWITCHNG TIME (ns) TC = 25°C TC = 175°C tr td(on) 10 Common Emitter VCC = 400 V, VGE = 15 V IC = 75 A 1 0 10 20 30 40 10 30 40 50 Figure 14. Turn−Off Characteristics vs. Gate Resistance 1000 SWITCHING TIME (ns) 10 Common Emitter VCC = 400 V, VGE = 15 V RG = 4.7 W 0 50 TC = 25°C TC = 175°C tr td(on) 100 150 200 100 tf 10 1 250 td(off) Common Emitter VCC = 400 V, VGE = 15 V RG = 4.7 W 0 50 100 150 200 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 15. Turn−On Characteristics vs. Collector Current Figure 16. Turn−Off Characteristics vs. Collector Current 5000 20K TC = 25°C TC = 175°C Eoff Common Emitter VCC = 400 V, VGE = 15 V IC = 75 A 10 20 30 40 Eon 1K Eoff 100 50 Common Emitter VCC = 400 V, VGE = 15 V RG = 4.7 W 0 50 100 150 200 Rg, GATE RESISTANCE (W) IC, COLLECTOR CURRENT (A) Figure 17. Switching Loss vs. Gate Resistance Figure 18. Switching Loss vs. Collector Current www.onsemi.com 6 250 TC = 25°C TC = 175°C 10K Eon 0 20 Figure 13. Turn−On Characteristics vs. Gate Resistance SWITCHING LOSS (mJ) SWITCHING TIME (ns) 0 Rg, GATE RESISTANCE (W) 100 SWITCHING LOSS (mJ) Common Emitter VCC = 400 V, VGE = 15 V IC = 75 A Rg, GATE RESISTANCE (W) TC = 25°C TC = 175°C 500 tf 10 50 500 1 td(off) 100 250 AFGHL75T65SQDC TYPICAL CHARACTERISTICS 100 10 ms 100 100 ms 10 1 ms 10 ms 1 0.1 Single Pulse TC = 25°C TJ = 175°C 1 DC 10 100 1 2 3 4 5 Figure 20. (Diode) Forward Characteristics vs. (Normal I−V) PTOT, DIODE POWER DISSIPATION (W) IF, DIODE FORWARD CURRENT (A) 0 Figure 19. SOA Characteristics (FBSOA) 10 50 75 100 125 150 175 100 80 60 40 20 0 25 50 75 100 125 150 175 TC, COLLECTOR−EMITTER CASE TEMPERATURE (°C) TC, COLLECTOR−EMITTER CASE TEMPERATURE (°C) Figure 21. (Diode) Forward Current Derating Figure 22. (Diode) Power Derating 30 EOSS, CAPACITANCE ENERGY (mJ) 10K OUTPUT CAPACITANCE (pF) TC = 75°C 10 VF, FORWARD VOLTAGE (V) 20 1K 100 10 TC = 175°C VCE, COLLECTOR−EMITTER VOLTAGE (V) 30 25 TC = 25°C TC = 125°C 1 1000 40 0 IF, FORWARD CURRENT (A) IC, COLLECTOR CURRENT (A) 500 Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 0.1 1 10 100 650 20 10 0 0 100 200 300 400 500 600 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 23. (Diode) Output Capacitance (Coes) vs. Reverse Voltage Figure 24. (Diode) Output Capacitance Stored Energy www.onsemi.com 7 AFGHL75T65SQDC TYPICAL CHARACTERISTICS THERMAL RESPONSE (Zthjc) 1 0.5 0.1 0.2 0.1 0.05 Single Pulse P DM 0.01 Peak TJ = PDM x ZqJC + TC Duty Factor, D = t1/t2 0.02 0.01 t1 t2 0.001 0.0001 0.001 0.01 1 0.1 10 100 RECTANGULAR PULSE DURATION (sec) Figure 25. Transient Thermal Impedance of IGBT THERMAL RESPONSE (Zthjc) 5 1 0.5 0.2 0.1 0.05 Single Pulse 0.1 P DM 0.02 Peak TJ = PDM x ZqJC + TC Duty Factor, D = t1/t2 t1 t2 0.01 0.01 0.0001 0.001 0.01 0.1 1 RECTANGULAR PULSE DURATION (sec) Figure 26. Transient Thermal Impedance of Diode www.onsemi.com 8 10 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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