SQM40081EL_GE3

SQM40081EL www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 °C MOSFET FEATURES TO-263 • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S D Top View G S PRODUCT SUMMARY VDS (V) -40 RDS(on) () at VGS = -10 V 0.0085 RDS(on) () at VGS = -4.5 V 0.0105 ID (A) Configuration Package G -50 Single P-Channel MOSFET TO-263 D ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -40 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C a TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID -46 -50 IDM -200 IAS -35 PD V -50 IS EAS UNIT 61 107 35 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 1.4 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c °C/W Notes a. Package limited b. Pulse test; pulse width  300 μs, duty cycle  2 % c. When mounted on 1" square PCB (FR4 material) S18-1009-Rev. A, 08-Oct-2018 Document Number: 79583 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40081EL www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance a VDS VGS = 0, ID = -250 μA -40 - - VGS(th) VDS = VGS, ID = -250 μA -1.5 - -2.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = -40 V - - -1 VGS = 0 V VDS = -40 V, TJ = 125 °C - - -50 VGS = 0 V VDS = -40 V, TJ = 175 °C - - -250 VGS = -10 V VDS  -5 V -50 - - VGS = -10 V ID = -25 A - 0.0070 0.0085 VGS = -10 V ID = -25 A, TJ = 125 °C - - 0.0110 VGS = -10 V ID = -25 A, TJ = 175 °C - - 0.0131 VGS = -4.5 V ID = -20 A - 0.0086 0.0105 - 92 - - 7365 9950 - 576 800 - 548 750 - 153 230 - 34 - VDS = -15 V, ID = -25 A V nA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c VGS = 0 V VDS = -25 V, f = 1 MHz VGS = -10 V VDS = -20 V, ID = -50 A Qgd Rg f = 1 MHz td(on) tr td(off) VDD = -20 V, RL = 0.4  ID  -50 A, VGEN = -10 V, Rg = 1  tf pF nC - 29 - 1.5 3.15 4.8 - 16 25 - 230 350 - 103 160 - 153 250 - - -200 - -0.96 -1.5 V - 56 120 ns - 83 170 nC - 34 -  ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD IF = -50 A, VGS = 0 Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb - 22 - IRM(REC) - -3.8 - Body diode peak reverse recovery current IF = -30 A, di/dt = 100 A/μs A ns A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-1009-Rev. A, 08-Oct-2018 Document Number: 79583 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40081EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 350 180 10000 10000 VGS = 10 V thru 6 V VGS = 4 V 140 100 70 1000 108 1st line 2nd line 1000 210 2nd line ID - Drain Current (A) 144 VGS = 5 V 1st line 2nd line 2nd line ID - Drain Current (A) 280 72 100 TC = 25 °C 36 TC = 125 °C VGS = 3 V TC = -55 °C 0 0 10 0 2 4 6 8 10 10 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title Axis Title 150 10000 0.025 TC = -55 °C 10000 TC = 125 °C 60 100 30 0 10 0 16 32 48 64 0.020 1000 0.015 VGS = 4.5 V 0.010 100 VGS = 10 V 0.005 0.000 0 80 16 32 Transconductance On-Resistance vs. Drain Current Axis Title Crss 100 100 10 24 32 40 10000 ID = 50 A VDS = 20 V 8 1000 6 1st line 2nd line Coss 2nd line VGS - Gate-to-Source Voltage (V) 1000 1st line 2nd line 2nd line C - Capacitance (pF) Ciss 16 4 100 2 0 10 0 25 50 75 100 125 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S18-1009-Rev. A, 08-Oct-2018 80 10 10 10000 8 64 ID - Drain Current (A) Axis Title 0 48 ID - Drain Current (A) 10 000 1000 1st line 2nd line 1000 90 2nd line RDS(on) - On-Resistance (Ω) 120 1st line 2nd line 2nd line gfs - Transconductance (S) TC = 25 °C 150 175 Document Number: 79583 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40081EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 VGS = 10 V 2nd line IS - Source Current (A) 1000 1.4 VGS = 4.5 V 1.1 100 TJ = 150 °C 10 1000 1 TJ = 25 °C 100 0.1 0.8 0.5 0.01 10 -50 -25 0 25 50 10 0 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.040 0.5 10000 10000 0.2 1000 0.024 0.016 100 TJ = 125 °C 0.008 1000 -0.1 1st line 2nd line 2nd line VGS(th) - Variance (V) 0.032 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line ID = 10 A 1.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 ID = 5 mA -0.4 ID = 250 μA 100 -0.7 TJ = 25 °C 0.000 -1.0 10 0 2 4 6 8 10 -50 -25 10 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 10000 ID = 1 mA -46 1000 -49 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) -43 -52 100 -55 -58 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature S18-1009-Rev. A, 08-Oct-2018 Document Number: 79583 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40081EL www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1000 Limited by RDS(on) a 100 μs 1000 10 1 ms ID limited 10 ms 100 ms, 1 s, 10 s, DC 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 10000 IDM limited 100 BVDSS limited 0.1 0.01 0.01 TC = 25 °C, single pulse 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient S18-1009-Rev. A, 08-Oct-2018 Document Number: 79583 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40081EL www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?79583. S18-1009-Rev. A, 08-Oct-2018 Document Number: 79583 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000