SQR40N10-25_GE3

SQR40N10-25 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 100 RDS(on) (Ω) at VGS = 10 V 0.025 RDS(on) (Ω) at VGS = 4.5 V 0.029 ID (A) • Package with low thermal resistance • 100 % Rg and UIS tested • AEC-Q101 qualified 40 Configuration Single TO-252 Reverse Lead DPAK Package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D TO-252 Reverse L Lead DPAK G G S D Drain connected to tab G Top View S D N-Channel MOSFET S Bottom View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID 26 40 IDM 160 IAS 40 PD V 40 IS EAS UNIT 80 136 45 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 50 RthJC 1.1 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). S15-1873-Rev. F, 10-Aug-15 Document Number: 69060 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQR40N10-25 www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 100 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 - 2.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 100 V - - 1 VGS = 0 V VDS = 100 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 100 V, TJ = 175 °C - - 250 VGS = 10 V VDS ≥ 5 V 50 - - VGS = 10 V ID = 40 A - 0.019 0.025 VGS = 10 V ID = 40 A, TJ = 125 °C - - 0.050 VGS = 10 V ID = 40 A, TJ = 175 °C - - 0.063 VGS = 4.5 V ID = 20 A - 0.021 0.029 - 73 - VDS = 15 V, ID = 40 A V nA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c Rg VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 50 V, ID = 40 A f = 1 MHz td(on) tr td(off) VDD = 50 V, RL = 1.25 Ω ID ≅ 40 A, VGEN = 10 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics - 2703 3380 - 312 390 - 127 160 - 46 70 - 8.2 - - 13 - 0.9 1.8 3.1 - 11 17 pF nC Ω - 11 17 - 27 41 - 6 9 - - 160 A - 0.9 1.5 V ns b Pulsed Current a ISM Forward Voltage VSD IF = 40 A, VGS = 0 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1873-Rev. F, 10-Aug-15 Document Number: 69060 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQR40N10-25 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 120 V GS = 10 V thru 5 V 80 ID - Drain Current (A) ID - Drain Current (A) 100 80 V GS = 4 V 60 40 60 40 T C = 25 °C 20 20 T C = 125 °C V GS = 3 V T C = - 55 °C 0 0 0 4 8 12 16 0 20 1 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.5 125 1.2 100 g fs - Transconductance (S) ID - Drain Current (A) 2 0.9 0.6 T C = 25 °C 0.3 T C = - 55 °C T C = 25 °C 75 50 T C = 125 °C 25 T C = 125 °C T C = - 55 °C 0 0 0 1 2 3 4 5 0 24 36 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Transconductance 48 60 80 100 4000 0.10 0.08 3000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 12 0.06 0.04 V GS = 4.5 V Ciss 2000 1000 0.02 Coss Crss V GS = 10 V 0 0 0 20 40 60 80 100 0 20 40 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance S15-1873-Rev. F, 10-Aug-15 Document Number: 69060 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQR40N10-25 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 2.5 ID = 40 A 2.1 6 4 V GS = 10 V (Normalized) V DS = 50 V RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 40 A 8 2 1.7 1.3 0.9 0 0 10 20 30 40 0.5 - 50 50 - 25 0 50 75 100 125 150 175 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 100 0.20 10 0.16 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 25 T J = 150 °C 1 T J = 25 °C 0.1 0.01 0.12 0.08 T J = 150 °C 0.04 0.001 T J = 25 °C 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 130 VDS - Drain-to-Source Voltage (V) ID = 10 mA VGS(th) Variance (V) 0.1 - 0.3 ID = 5 mA - 0.7 ID = 250 μA - 1.1 - 1.5 - 50 - 25 0 25 50 75 100 125 150 175 124 118 112 106 100 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature S15-1873-Rev. F, 10-Aug-15 Document Number: 69060 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQR40N10-25 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited I D - Drain Current (A) 100 100 µs Limited by RDS(on)* ID Limited 10 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 0.1 TC = 25 °C Single Pulse 0.01 0.01 * VGS BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1873-Rev. F, 10-Aug-15 Document Number: 69060 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQR40N10-25 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69060. S15-1873-Rev. F, 10-Aug-15 Document Number: 69060 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQR40N10-25 www.vishay.com REVISION HISTORY REVISION F a DATE 04-Aug-15 Vishay Siliconix DESCRIPTION OF CHANGE • Revised Rg minimum limit Note a. As of April 2014 S15-1873-Rev. F, 10-Aug-15 Document Number: 69060 7 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252 Reverse Lead Case Outline E b2 C1 M L2 A H D M E1 Area Z A1 D1 b b1 E1 Gage plane height (0.020) L3 L1 L A2 e C e1 Notes • Dimension L3 for reference only • Area Z: unplated area more than 80 % heatsink area and for partial plating part only DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 2.23 2.33 0.088 0.092 A1 0.64 0.89 0.025 0.035 A2 0.03 0.18 0.001 0.007 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.49 5.00 0.177 0.197 E 6.48 6.73 0.255 0.265 E1 4.32 - 0.170 e 2.28 BSC e1 4.57 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 L1 0.090 BSC 2.74 BSC 0.410 0.070 0.108 BSC L2 0.89 1.27 0.035 L3 1.15 1.52 0.040 0.050 0.060 M - 1.00 (reference only) - 0.039 (reference only) ECN: T16-0952-Rev. D, 16-Jan-17 DWG: 5894 Revision: 16-Jan-17 Document Number: 72206 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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