SUA70060E-E3

SUA70060E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () MAX. ID (A) 0.00610 at VGS = 10 V 56.6 0.00700 at VGS = 7.5 V 54.4 Qg (TYP.) 53.5 nC • ThunderFET® power MOSFET • Qgd / Qgs ratio < 1 optimizes switching characteristics • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Thin-Lead TO-220 FULLPAK APPLICATIONS D • Power supply - Secondary synchronous rectification - AC/DC switch-mode power supplies • DC/DC converter GD G • Power tools S • Motor drive switch • DC/AC inverter Ordering Information: SUA70060E-E3 (lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID 45.2 IDM 240 Avalanche Current IAS 50 EAS 125 Single Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TC = 70 °C PD V 56.6 Pulsed Drain Current (t = 100 μs) a UNIT 39 25 A mJ W TJ, Tstg -55 to +150 °C UNIT THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT Junction-to-Ambient (PCB Mount) b RthJA 60 Junction-to-Case (Drain) RthJC 3.2 °C/W Notes a. Duty cycle  1 %. b. When mounted on 1" square PCB (FR4 material). S16-1128-Rev. A, 06-Jun-16 Document Number: 65787 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUA70060E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 100 - - VGS(th) VDS = VGS, ID = 250 μA 2 - 4 IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VDS = 100 V, VGS = 0 V - - 1 VDS = 100 V, VGS = 0 V, TJ = 125 °C - - 100 VDS = 100 V, VGS = 0 V, TJ = 150 °C - - 2 mA VDS  10 V, VGS = 10 V 50 - - A Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Dynamic IDSS ID(on) RDS(on) gfs VGS = 10 V, ID = 30 A - 0.00505 0.00610 VGS = 7.5 V, ID = 20 A - 0.00540 0.00700 VDS = 15 V, ID = 30 A - 85 - - 3300 - V nA μA  S b Input Capacitance Ciss Output Capacitance Coss - 1395 - Reverse Transfer Capacitance Crss - 95 - Total Gate Charge c Qg - 53.5 81 Gate-Source Charge c Gate-Drain Charge c VDS = 50 V, VGS = 10 V, ID = 30 A - 14.5 - - 13.2 - f = 1 MHz 0.9 1.9 3.8 - 13 26 VDD = 50 V, RL = 1.67  ID  30 A, VGEN = 10 V, Rg = 1  - 22 44 - 27 54 - 9 18 Qgd Gate Resistance Turn-On Delay Time Qgs VGS = 0 V, VDS = 50 V, f = 1 MHz Rg c Rise Time c Turn-Off Delay Time c Fall Time c td(on) tr td(off) tf pF nC  ns Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C) Pulsed Current (t = 100 μs) ISM Forward Voltage a VSD Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge IF = 30 A, VGS = 0 V trr IRM(REC) Qrr IF = 30 A, dI/dt = 100 A/μs - - 240 A - 0.86 1.4 V - 88 178 ns - 5 10 A - 220 440 nC Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1128-Rev. A, 06-Jun-16 Document Number: 65787 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUA70060E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 250 200 10000 10000 VGS = 10 V thru 7 V 100 100 VGS = 5 V 50 1000 120 1st line 2nd line 1000 VGS = 6 V 150 2nd line ID - Drain Current (A) 160 1st line 2nd line 80 TC = 25 °C 100 40 TC = 125 °C VGS = 4 V 0 0 1 2 3 4 5 10 0 2 4 Output Characteristics Transfer Characteristics Axis Title 100 VGS = 10 V Coss 2400 100 1200 10 20 40 60 80 1000 Ciss 3600 1st line 2nd line 0.005 2nd line C - Capacitance (pF) 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1000 0.004 10000 4800 VGS = 7.5 V 0.006 Crss 0 10 0 100 20 40 60 80 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance Axis Title 100 Axis Title 10 100 10000 10000 TC = -55 °C 1000 4 1st line 2nd line 6 VDS = 25 V, 50 V, and 75 V 100 2 0 10 22 33 44 55 2nd line gfs - Transconductance (S) ID = 30 A 8 11 10 6000 10000 0.003 2nd line VGS - Gate-to-Source Voltage (V) 8 VGS - Gate-to-Source Voltage (V) 2nd line Axis Title 0 6 VDS - Drain-to-Source Voltage (V) 2nd line 0.007 0 TC = -55 °C 0 10 80 TC = 25 °C 1000 60 TC = 125 °C 40 100 20 0 0 5.0 10.0 15.0 20.0 Qg - Total Gate Charge (nC) 2nd line ID - Drain Current (A) 2nd line Gate Charge Transconductance S16-1128-Rev. A, 06-Jun-16 1st line 2nd line 2nd line ID - Drain Current (A) 200 25.0 10 30.0 Document Number: 65787 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUA70060E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 ID = 30 A 10 1000 1.4 VGS = 7.5 V 1.1 100 0.8 0.5 -25 0 25 50 75 1000 1 TJ = 25 °C 0.1 100 0.01 0.001 10 -50 TJ = 150 °C 100 125 150 10 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.05 1.0 10000 10000 0.4 0.02 100 TJ = 125 °C 1000 -0.2 1st line 2nd line 1000 0.03 2nd line VGS(th) - Variance (V) 0.04 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line VGS = 10 V 2nd line IS - Source Current (A) 1.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 ID = 5 mA -0.8 100 ID = 250 μA -1.4 0.01 TJ = 25 °C 2 4 6 8 10 -2.0 10 10 -50 -25 0 25 75 100 125 150 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title Axis Title 10000 1000 10000 125 IDM limited 120 1000 115 100 110 2nd line ID - Drain Current (A) ID = 250 μA 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 50 ID limited 100 1000 10 1st line 2nd line 0 10 μs Limited by RDS(on) (1) 100 us 1 ms 10 ms 1 100 100ms,1 s, DC TC = 25 °C Single pulse 105 10 -50 -25 0 25 50 75 100 125 150 TJ - Temperature (°C) 2nd line Drain Source Voltage vs. Junction Temperature S16-1128-Rev. A, 06-Jun-16 0.1 0.01 (1) 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 65787 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUA70060E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 65 100 10000 10000 1000 2nd line IDAV (A) 26 1st line 2nd line 1000 39 1st line 2nd line 2nd line ID - Drain Current (A) 52 25 °C 150 °C 100 100 13 0 10 0.00001 10 0 25 50 75 100 125 150 0.0001 10 0.01 0.001 TC - Case Temperature (°C) 2nd line Time (s) 2nd line Current De-Rating IDAV vs. Time Axis Title 10000 Duty Cycle = 0.5 Notes: 0.2 0.1 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 PDM 0.05 t1 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 60 °C/W 0.02 Single pulse 3. TJM - TA = PDMZthJA 100 (t) 4. Surface mounted 0.01 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. S16-1128-Rev. A, 06-Jun-16 Document Number: 65787 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUA70060E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 10000 Duty Cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.1 0.05 100 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case                                            Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65787. S16-1128-Rev. A, 06-Jun-16 Document Number: 65787 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220 FULLPAK Thin Lead E ØP A A1 d2 d3 d1 D L1 b2 x 3 L bx3 c A2 e DIMENSIONS SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.30 4.70 0.169 0.185 A1 2.50 2.90 0.098 0.114 A2 2.40 2.80 0.094 0.110 b 0.60 0.80 0.024 0.031 b2 0.60 0.90 0.024 0.035 c - 0.60 - 0.024 D 8.30 8.70 0.327 0.342 d1 14.70 15.30 0.579 0.602 d2 2.90 3.10 0.114 0.122 d3 3.30 3.70 0.130 0.146 E 9.70 10.30 0.382 0.406 e 2.50 2.70 0.098 0.106 L 13.40 13.80 0.528 0.543 L1 1.00 2.80 0.039 0.110 ØP 3.00 3.40 0.118 0.134 ECN: E20-0684-Rev. D, 28-Dec-2020 DWG: 6021 Revision: 28-Dec-2020 Document Number: 62649 1 For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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