SUD35N05-26L-E3

SUD35N05-26L Vishay Siliconix N-Channel 55 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 55 a RDS(on) () ID (A) 0.0200 at VGS = 10 V 35 0.0260 at VGS = 4.5 V 30 • • • • TrenchFET® Power MOSFETS 175 °C Rated Maximum Junction Temperature Low Input Capacitance Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET Ordering Information: SUD35N05-26L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 55 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25 °C Maximum Power Dissipation TA = 25 °C V 35 ID 25 IDM 80 IS 35 A 50c PD W 7.5b TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol t  10 s Junction-to-Ambientb Steady State RthJA Typical Maximum 17 20 50 60 Junction-to-Case RthJC 2.5 3 Junction-to-Lead RthJL 5 6 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x1" FR4 board, t  10 s. c. See SOA curve for voltage derating. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71443 S12-1360-Rev. C, 11-Jun-12 For more information please contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD35N05-26L Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typa Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VBR VGS = 0 V, ID = 250 µA 55 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 44 V, VGS = 0 V 1 VDS = 44 V, VGS = 0 V, TJ = 125 °C 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS =5 V, VGS = 5 V 35 VGS = 10 V, ID = 20 A Drain-Source On-State Resistanceb Forward Transconductanceb V gfs µA A 0.0165 VGS = 10 V, ID = 10 A, TJ = 125 °C RDS(on) nA 0.0200 0.0350 VGS = 4.5 V, ID = 15 A 0.0215 VDS = 15 V, ID = 20 A 25 VGS = 0 V, VDS = 25 V, f = 1 MHz 185  0.0260 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 80 Total Gate Chargec Qg 10.5 c 885 Qgs Gate-Source Charge c Gate-Drain Charge Qgd Turn-On Delay Timec td(on) c tr Turn-Off Delay Timec td(off) Rise Time Fall Timec VDS = 25 V, VGS = 5 V, ID = 35 A pF 13 nC 4 4.8 VDD = 25 V, RL = 0.3  ID  35 A, VGEN = 10 V, RG = 2.5  tf 5 8 18 30 20 30 100 150 ns Source-Drain Diode Ratings and Characteristic (TC = 25 °C) IS 35 Pulsed Current ISM 80 Diode Forward Voltageb VSD IF = 80 A, VGS = 0 V trr IF = 35 A, di/dt = 100 A/µs Continuous Current Source-Drain Reverse Recovery Time 25 A 1.5 V 40 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 71443 S12-1360-Rev. C, 11-Jun-12 For more information please contact: pmostechsupport@vishay.com www.vishay.com 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD35N05-26L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless noted) 100 100 VGS = 10 thru 6 V 5V 80 I D - Drain Current (A) I D - Drain Current (A) 80 TC = - 55 °C 60 4V 40 20 25 °C 125 °C 60 40 20 2V 3V 0 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 60 1 7 8 0.04 TC = - 55 °C 0.03 40 25 °C 30 125 °C VGS = 4.5 V VGS = 10 V 0.02 R DS(on) - g fs - Transconductance (S) 50 20 0.01 10 0 0.00 0 20 40 60 ID - Drain Current (A) 80 100 0 Transconductance 40 60 I D - Drain Current (A) 80 100 On-Resistance vs. Drain Current 20 VGS - Gate-to-Source Voltage (V) 1500 1200 C - Capacitance (pF) 20 Ciss 900 600 300 Coss Crss 0 0 VDS = 25 V ID = 35 A 16 12 8 4 0 11 22 33 44 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 71443 S12-1360-Rev. C, 11-Jun-12 55 0 10 20 30 40 Qg - Total Gate Charge (nC) Gate Charge For more information please contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD35N05-26L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless noted) 100 2.0 R DS(on) - On-Resistance (Normalized) VGS = 10 V ID = 20 A I S - Source Current (A) 1.6 1.2 0.8 TJ = 175 °C 10 TJ = 25 °C 0.4 1 0.0 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 500 40 Limited by R DS(on)* 100 I D - Drain Current (A) I D - Drain Current (A) 30 20 10 µs 100 µs 10 10 ms 100 ms 1s DC 1 10 TC = 25 °C Single Pulse 0 0 25 50 75 100 125 TC - Case Temperature (°C) 150 175 0.1 0.1 Max. Avalanche and Drain Current vs. Case Temperature 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71443. Document Number: 71443 S12-1360-Rev. C, 11-Jun-12 For more information please contact: pmostechsupport@vishay.com www.vishay.com 4 This document is subject to change without notice. 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