SUP90N04-3M3P-GE3

SUP90N04-3m3P Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 VDS (V) 40 Qg (Typ.) 87 TO-220AB • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Supply - Secondary Synchronous Rectification • DC/DC Converter D G D S G Top View Ordering Information: SUP90N04-3m3P-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID IDM Pulsed Drain Current Avalanche Current a Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc V 90d 90d 160 IAS 60 EAS 180 PD Unit 125b 3.1 A mJ W TJ, Tstg - 55 to 150 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient (PCB Mount)c RthJA 40 Junction-to-Case (Drain) RthJC 1 °C/W Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 65902 S11-2042-Rev. B, 17-Oct-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP90N04-3m3P Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = 250 µA 40 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS ID(on) RDS(on) gfs 2.5 ± 250 VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 125 °C 50 VDS = 40 V, VGS = 0 V, TJ = 150 °C 250 VDS 10 V, VGS = 10 V 50 V nA µA A VGS = 10 V, ID = 22 A 0.0027 0.0033 VGS = 4.5 V, ID = 20 A 0.0034 0.0041 VDS = 15 V, ID = 20 A 169  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Rg Turn-On Delay Timec Rise Timec 283 87 VDS = 20 V, VGS = 10 V, ID = 20 A Fall Timec td(off) 131 nC 15.3 12.2 f = 1 MHz td(on) tr c pF 705 Qgd Gate Resistance Turn-Off Delay Time 5286 VGS = 0 V, VDS = 20 V, f = 1 MHz VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  tf Drain-Source Body Diode Ratings and Characteristics TC = 25 °C 0.5 2.7 5.4 11 20 7 14 45 68 7 14 90 Pulsed Current ISM 160 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 10 A, VGS = 0 V 0.72 IF = 10 A, dI/dt = 100 A/µs 52 trr IRM(REC) Qrr ns b IS Continuous Current  A 1.2 V 42 63 ns 2.5 3.8 A 78 nC Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65902 S11-2042-Rev. B, 17-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP90N04-3m3P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.0040 160 RDS(on) - On-Resistance (Ω) VGS = 10 V thru 3 V ID - Drain Current (A) 120 2V 80 40 0.0030 VGS = 10 V 0.0025 0.0020 0 0 VDS - Drain-to-Source Voltage (V) 40 60 ID - Drain Current (A) Output Characteristics On-Resistance vs. Drain Current 0.5 1.0 1.5 0 2.0 10 0.010 8 0.008 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS = 4.5 V 0.0035 TC = 25 °C 6 4 2 20 80 100 0.006 TJ = 150ġ°C 0.004 TJ = 25 °C 0.002 TC = 125 °C TC = - 55 °C 0 0 0 0.6 1.2 1.8 2.4 3.0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 10 450 ID = 24 A gfs - Transconductance (S) VGS - Gate-to-Source Voltage (V) TC = 25 °C 360 TC = - 55 °C 270 TC = 125 °C 180 90 8 VDS = 8 V 6 VDS = 15 V 4 VDS = 24 V 2 0 0 0 16 32 48 ID - Drain Current (A) Transconductance Document Number: 65902 S11-2042-Rev. B, 17-Oct-11 64 80 0 15 30 45 60 75 90 Qg - Total Gate Charge Gate Charge www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP90N04-3m3P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.2 1.7 10 VGS(th) (V) IS - Source Current (A) 100 TJ = 150 °C TJ = 25 °C ID = 250 μA 1.2 1 0.7 0.1 0.0 0.3 0.6 0.9 0.2 - 50 1.2 VSD - Source-to-Drain Voltage (V) 0 25 50 75 100 125 TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 8000 - 25 150 175 125 150 50 VDS - Drain-to-Source Voltage (V) ID = 250 μA C - Capacitance (pF) 6000 Ciss 4000 2000 Coss 48 46 44 42 Crss 0 0 10 20 30 40 - 50 40 0 25 50 75 100 TJ - Junction Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 160 2.0 ID = 22 A VGS = 10 V 1.7 120 ID - Drain Current (A) RDS(on) - On-Resistance (Normalized) - 25 VDS - Drain-to-Source Voltage (V) 1.4 VGS = 4.5 V 1.1 Package Limited 80 40 0.8 0.5 - 50 0 - 25 0 25 50 75 100 125 150 175 0 25 50 75 100 TJ - Junction Temperature (°C) TC - Case Temperature (°C) On-Resistance vs. Junction Temperature Current Derating www.vishay.com 4 125 150 Document Number: 65902 S11-2042-Rev. B, 17-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP90N04-3m3P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 100 Limited by RDS(on)* ID - Drain Current (A) IDAV (A) 100 TJ = 25 °C 10 TJ = 150 °C 100 μs 10 1 ms 10 ms 100 ms, 1 s 10 s, DC 1 0.1 TA = 25 °C Single Pulse 1 0.00001 0.0001 0.001 0.01 0.01 0.1 0.1 Time (s) Single Pulse Avalanche Current Capability vs. Time BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65902. Document Number: 65902 S11-2042-Rev. B, 17-Oct-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000