TA6L27AHM3/H

TA6L6.8A thru TA6L51A www.vishay.com Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES eSMP® Series • Low-profile package • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high reliability and automotive requirement • Unidirectional only Top View Bottom View • Excellent clamping capability • Peak pulse power: 600 W (10 μs/1000 μs) SlimSMAW (DO-221AD) Cathode • AEC-Q101 qualified available, HM3 suffix meets JESD 201 class 2 whisker test Anode • Compatible to SOD-128 package case outline LINKS TO ADDITIONAL RESOURCES • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D 3D TYPICAL APPLICATIONS 3D Models Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for automotive. PRIMARY CHARACTERISTICS VBR 6.8 V to 51 V VWM 5.8 V to 43.6 V PPPM (10 x 1000 μs) 600 W TJ max. 185 °C MECHANICAL DATA Case: SlimSMAW (DO-221AD) Molding compound meets UL 94 V-0 flammability rating Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Polarity Unidirectional Package SlimSMAW (DO-221AD) Circuit configuration Single Terminals: matte tin plated J-STD-002 and JESD 22-B102 leads, solderable per Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10 μs/1000 μs waveform (fig. 1) (1) Peak pulse current with a 10 μs/1000 μs waveform (fig. 3) Operating junction and storage temperature range SYMBOL VALUE UNIT PPPM 600 W IPPM See table next page A TJ, TSTG -65 to +185 °C (1) Note (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A Revision: 17-Sep-2021 Document Number: 87415 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TA6L6.8A thru TA6L51A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR (1) AT IT (V) STANDTEST OFF CURRENT VOLTAGE IT VWM (mA) (V) MIN. NOM. MAX. MAXIMUM REVERSE LEAKAGE AT VWM IR (μA) MAXIMUM REVERSE LEAKAGE AT VWM TJ = 150 °C ID (μA) MAXIMUM PEAK PULSE SURGE CURRENT IPPM (2) (A) MAXIMUM TYPICAL CLAMPING TEMP. VOLTAGE COEFFICIENT AT IPPM OF VBR (3) VC αT (%/°C) (V) TA6L6.8A AEL 6.45 6.80 7.14 10 5.80 500 1000 57.1 10.5 0.047 TA6L7.5A AGL 7.13 7.50 7.88 10 6.40 250 500 53.1 11.3 0.052 TA6L8.2A AKL 7.79 8.20 8.61 10 7.02 100 200 49.6 12.1 0.056 TA6L9.1A AML 8.65 9.10 9.55 1.0 7.78 25 50 44.8 13.4 0.060 TA6L10A APL 9.5 10.0 10.5 1.0 8.55 5.0 20 41.4 14.5 0.064 TA6L11A ARL 10.5 11.0 11.6 1.0 9.40 2.0 5.0 38.5 15.6 0.067 TA6L12A ATL 11.4 12.0 12.6 1.0 10.2 2.0 5.0 35.9 16.7 0.070 TA6L13A AVL 12.4 13.0 13.7 1.0 11.1 2.0 5.0 33.0 18.2 0.072 TA6L15A AXL 14.3 15.0 15.8 1.0 12.8 1.0 5.0 28.3 21.2 0.076 TA6L16A AZL 15.2 16.0 16.8 1.0 13.6 1.0 5.0 26.7 22.5 0.078 TA6L18A BEL 17.1 18.0 18.9 1.0 15.3 1.0 5.0 23.5 25.5 0.080 TA6L20A BGL 19.0 20.0 21.0 1.0 17.1 1.0 5.0 21.7 27.7 0.082 TA6L22A BKL 20.9 22.0 23.1 1.0 18.8 1.0 5.0 19.6 30.6 0.084 TA6L24A BML 22.8 24.0 25.2 1.0 20.5 1.0 5.0 18.1 33.2 0.085 TA6L27A BPL 25.7 27.0 28.4 1.0 23.1 1.0 5.0 16.0 37.5 0.087 TA6L30A BRL 28.5 30.0 31.5 1.0 25.6 1.0 5.0 14.5 41.4 0.088 TA6L33A BTL 31.4 33.0 34.7 1.0 28.2 1.0 5.0 13.1 45.7 0.089 TA6L36A BVL 34.2 36.0 37.8 1.0 30.8 1.0 5.0 12.0 49.9 0.090 TA6L39A BXL 37.1 39.0 41.0 1.0 33.3 1.0 5.0 11.1 53.9 0.091 TA6L43A BZL 40.9 43.0 45.2 1.0 36.8 1.0 5.0 10.1 59.3 0.092 TA6L47A CEL 44.7 47.0 49.4 1.0 40.2 1.0 5.0 9.3 64.8 0.092 TA6L51A CGL 48.5 51.0 53.6 1.0 43.6 1.0 5.0 8.6 70.1 0.093 Notes (1) Pulse test: t ≤ 50 ms p (2) Surge current waveform per fig. 3 and derated per fig. 2 (3) To calculate V BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25)) (4) All terms and symbols are consistent with ANSI/IEEE C62.35 THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Thermal resistance SYMBOL TYP. MAX. UNIT RθJA (1) 120 150 °C/W 12 15 °C/W RθJM (2) Notes (1) Thermal resistance junction-to-ambient to follow JEDEC® 51-2A,device mounted on FR4 PCB, 2 oz. standard footprint (2) Thermal resistance junction-to-mount to follow JEDEC® 51-14 using Transient Dual Interface Test Method (TDIM) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE TA6L6.8AHM3/H (1) 0.033 H 3500 7" diameter plastic tape and reel TA6L6.8AHM3/I (1) 0.033 I 14 000 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 17-Sep-2021 Document Number: 87415 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TA6L6.8A thru TA6L51A www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C, unless otherwise noted) Axis Title 150 tr = 10 µs 1 10000 1000 100 Peak value IPPM Half value IPPM - IPPM/2 50 100 10/1000µs waveform td 0.1 10 100 1000 10 0 10 000 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 tp - Time (ms) td - Pulse Width (μs) Fig. 1 - Peak Pulse Power Rating Curve Fig. 3 - Pulse Waveform 10 000 100 CJ - Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage (%) TJ = 25 °C Pulse width (td) is defined as the point where the peak current decays to 50 % of IPPM 1st line 2nd line 2nd line IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 10 75 50 25 0 Measured at zero bias 1000 Measured at stand-off voltage, VWM 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 0 25 50 75 100 125 150 175 200 TJ - Initial Temperature (°C) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature 1 10 100 VBR - Breakdown Voltage (V) Fig. 4 - Typical Junction Capacitance Note • Fig. 1, power calculations is based on IPPM times defined maximum clamping voltage by pulse width Revision: 17-Sep-2021 Document Number: 87415 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TA6L6.8A thru TA6L51A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SlimSMAW (DO-221AD) Cathode band 0.106 (2.70) 0.075 (1.90) 0.063 (1.60) 0.091 (2.30) 0.032 (0.81) 0.014 (0.36) 0.158 (4.00) 0.142 (3.60) 0.024 (0.60) 0.012 (0.30) 0.197 (5.00) 0.173 (4.40) 0.043 (1.10) 0.035 (0.90) 0.083 (2.10) min. 0.009 (0.22) 0.004 (0.10) 0.055 (1.40) min. 0.118 (3.00) max. 0.055 (1.40) min. 0.228 (5.80) ref. Mounting pad layout Revision: 17-Sep-2021 Document Number: 87415 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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