TLMS3100-GS08

TLMS310. Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • SMD LEDs with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement e3 equipment • EIA and ICE standard package • Compatible with infrared, vapor phase and wave solder processes according to CECC • Available in 8 mm tape • Low profile package • Non-diffused lens: excellent for coupling to light pipes and backlighting • Low power consumption • Luminous intensity ratio in one packaging unit IVmax/IVmin ≤ 2.0, optional ≤ 1.6 • Lead (Pb)-free device 19225 DESCRIPTION These devices have been designed to meet the increasing demand for surface mounting technology. The package of the TLMS310. is the PLCC-2 (equivalent to a size B tantalum capacitor). It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. PRODUCT GROUP AND PACKAGE DATA • Product group: LED • Package: SMD PLCC-2 • Product series: standard • Angle of half intensity: ± 60° APPLICATIONS • Automotive: backlighting in dashboards and switches • Telecommunication: indicator and backlighting in telephone and fax • Indicator and backlight for audio and video equipment • Indicator and backlight in office equipment • Flat backlight for LCDs, switches and symbols PARTS TABLE PART COLOR, LUMINOUS INTENSITY TECHNOLOGY TLMS3100-GS08 Red, IV > 2.5 mcd GaAsP on GaP TLMS3100-GS18 Red, IV > 2.5 mcd GaAsP on GaP TLMS3101-GS08 Red, IV = (4 to 12.5) mcd GaAsP on GaP TLMS3101-GS18 Red, IV = (4 to 12.5) mcd GaAsP on GaP Document Number 83170 Rev. 1.5, 24-Sep-07 www.vishay.com 1 TLMS310. Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS1) TLMS310. PARAMETER TEST CONDITION SYMBOL VALUE VR 6 V Tamb ≤ 60 °C IF 30 mA tp ≤ 10 μs IFSM 0.5 A Tamb ≤ 60 °C PV 100 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Tsd 260 °C RthJA 400 K/W Reverse voltage DC Forward current Surge forward current Power dissipation Junction temperature t≤5s Soldering temperature mounted on PC board Thermal resistance junction/ ambient (pad size > 16 mm2) UNIT Note: 1) T amb = 25 °C, unless otherwise specified OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMS310., RED PARAMETER TEST CONDITION PART SYMBOL MIN TYP. TLMS3100 IV 2.5 7.5 MAX UNIT Luminous intensity 2) IF = 10 mA IV 4 12.5 mcd Dominant wavelength IF = 10 mA λd 624 636 nm TLMS3101 Peak wavelength IF = 10 mA λp 640 nm Angle of half intensity IF = 10 mA ϕ ± 60 deg Forward voltage IF = 20 mA VF 2.0 2.6 V IR = 10 μA VR VR = 0, f = 1 MHz Cj 7.0 pF Temperature coefficient of VF IF = 20 mA TCVF - 1.8 mV/K Temperature coefficient of λd IF = 10 mA TCλd 0.05 nm/K Reverse voltage Junction capacitance 6 V Note: 1) Tamb = 25 °C, unless otherwise specified 2) in one packing unit I Vmax/IVmin ≤ 1.6 TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 60 IF - Forward Current (mA) PV - Power Dissipation (mW) 125 100 75 50 25 50 40 30 20 10 0 0 0 95 10904 20 40 60 80 100 Tamb - Ambient Temperature (°C) Figure 1. Power Dissipation vs. Ambient Temperature www.vishay.com 2 0 95 10905 20 40 60 80 100 Tamb - Ambient Temperature (°C) Figure 2. Forward Current vs. Ambient Temperature for InGaN Document Number 83170 Rev. 1.5, 24-Sep-07 TLMS310. Vishay Semiconductors 10000 2.0 0.01 1000 0.02 0.05 100 0.2 0.5 DC 10 0.1 1 0.01 1 0.8 0.4 100 10 t p - Pulse Length (ms) 0° 10° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.2 0 0.2 20 40 60 80 Tamb - Ambient Temperature (°C) 0.4 200 150 100 50 0 - 50 - 100 - 150 - 200 - 250 - 300 0 0.6 I F - Forward Current (mA) super red 10 60 80 100 5 4 3 2 1 0 -1 -2 d 1 40 Figure 7. Change of Forward Voltage vs. Ambient Temperature - Change of Dom. Wavelength (nm) 100 20 Tamb - Ambient Temperature (°C) 16636 Figure 4. Rel. Luminous Intensity vs. Angular Displacement 100 Figure 6. Rel. Luminous Intensity vs. Ambient Temperature 20° 30° 0.4 0 16635 Figure 3. Pulse Forward Current vs. Pulse Duration IV rel - Relative Luminous Intensity 1.2 0.0 0.1 95 9985 0.6 95 10319 super red 1.6 VF - Change of Forward Voltage (mV) I F - Forward Current (mA) IV rel - Relative Luminous Intensity Tamb < 60 °C t p /T = 0.005 -3 0.1 0 16634 2 1 3 4 VF - Forward Voltage (V) Figure 5. Forward Current vs. Forward Voltage Document Number 83170 Rev. 1.5, 24-Sep-07 0 5 16637 20 40 60 80 100 Tamb - Ambient Temperature (°C) Figure 8. Change of Dominant Wavelength vs. Ambient Temperature www.vishay.com 3 TLMS310. Vishay Semiconductors 1.2 IV rel - Relative Luminous Intensity IV rel - Relative Luminous Intensity 10 super red 1 0.1 0.01 1 10 IF - Forward Current (mA) 16638 Super-red 1.0 0.8 0.6 0.4 0.2 0.0 550 100 590 630 Figure 9. Relative Luminous Intensity vs. Forward Current 670 710 750 - Wavelength (nm) 16639 Figure 10. Relative Intensity vs. Wavelength PACKAGE DIMENSIONS in millimeters 3.5 ± 0.2 0.9 1.75 ± 0.10 technical drawings according to DIN specifications Mounting Pad Layout Pin identification area covered with solder resist 4 2.6 (2.8) A 2.8 C 2.2 + 0.15 1.2 4 1.6 (1.9) ? 3 2.4 + 0.15 Drawing-No.: 6.541-5025.01-4 Issue: 8; 22.11.05 95 11314-1 www.vishay.com 4 Document Number 83170 Rev. 1.5, 24-Sep-07 TLMS310. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 83170 Rev. 1.5, 24-Sep-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1