TP0202K-T1-GE3

TP0202K Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) Qg (Typ.) 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 - 30 1000 TO-236 (SOT-23) G APPLICATIONS 1 3 D Marking Code: 2Kwll S • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 1.2 Ω (typ.) • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 14 ns (typ.) • Low Input Capacitance: 31 pF (typ.) • 2000 V ESD Protection 2K = Part Number Code for TP0202K w = Week Code ll = Lot Traceability 2 Top View Ordering Information: TP0202K-T1-E3 (Lead (Pb)-free) TP0202K-T1-GE3 (Lead (Pb)-free and Halogen-free) • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. • Battery Operated Systems • Power Supply Converter Circuits • Solid-State Relays BENEFITS • • • • • Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Easily Driven without Buffer ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Pulsed Drain Currentb Power Dissipationa Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range ID IDM TA = 25 °C TA = 85 °C PD Unit V - 385 - 280 mA - 750 350 185 mW RthJA 350 °C/W TJ, Tstg - 55 to 150 °C Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71609 S-83053-Rev. E, 29-Dec-08 www.vishay.com 1 TP0202K Vishay Siliconix SPECIFICATIONS TA = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. Typ. VDS VGS = 0 V, ID = - 100 µA - 30 - 38 VGS(th) VDS = VGS, ID = - 250 µA - 1.3 -2 Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage IGSS Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltagea IDSS ID(on) - 3.0 VDS = 0 V, VGS = ± 5 V ± 50 VDS = 0 V, VGS = ± 10 V ± 300 VDS = - 30 V, VGS = 0 V - 100 VDS = - 30 V, VGS = 0 V, TJ = 85 °C - 10 VGS = - 10 V, VDS = - 10 V - 500 nA µA mA VGS = - 4.5 V, ID = - 50 mA 2.1 3.5 VGS = - 10 V, ID = - 500 mA 1.25 1.4 gfs VDS = - 5 V, ID = - 200 mA 315 VSD IS = - 250 mA, VGS = 0 V RDS(on) V Ω mS - 1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = - 16 V, VGS = - 10 V ID ≅ - 200 mA 1000 225 pC 175 31 VDS = - 15 V, VGS = 0 V f = 1 MHz 11 pF 4 Switchingb Turn-On Time Turn-Off Time td(on) tr td(off) 9 VDD = - 15 V, RL = 75 Ω ID ≅ - 200 mA, VGEN = - 10 V, RG = 6 Ω tf 6 30 ns 20 Notes: a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71609 S-83053-Rev. E, 29-Dec-08 TP0202K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1200 1.6 6V VGS = 10 V 1.4 5.5 V 1000 I D - Drain Current (A) ID - Drain Current (mA) 8V 1.2 5V 7V 1.0 4.5 V 0.8 4V 0.6 3.5 V TJ = - 55 °C 800 25 °C 600 125 °C 400 0.4 3V 200 0.2 0 0.0 0 1 2 3 4 0 5 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 14 20 12 RDS(on) - On-Resistance (Ω) RDS(on) - On-Resistance (Ω) 16 VGS = 4.5 V 12 VGS = 10 V 8 4 10 8 6 4 VGS = 4.5 V VGS = 10 V 2 0 0 0 4 8 12 16 0 20 200 600 800 1000 ID - Drain Current (mA) VGS - Gate -to-Source Voltage (V) On-Resistance vs. Gate-Source Voltage On-Resistance vs. Drain Current 50 16 VGS - Gate-to-Source Voltage (V) VGS = 0 V f = 1 MHz 40 C - Capacitance (pF) 400 Ciss 30 20 Coss 10 Crss ID = 200 mA 14 12 VDS = 16 V 10 8 VDS = 10 V 6 4 2 0 0 0 4 8 12 16 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 71609 S-83053-Rev. E, 29-Dec-08 20 0 200 400 600 800 1000 1200 1400 1600 Qg - Total Gate Charge (pC) Gate Charge www.vishay.com 3 TP0202K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.8 1000 VGS = 0 V 1.6 VGS = 10 V at 200 mA IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 1.4 1.2 1.0 VGS = 4.5 V at 50 mA 0.8 0.6 0.4 100 TJ = 150 °C TJ = 25 °C 10 TJ = - 55 °C 0.2 0.0 - 50 1 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 0.00 On-Resistance vs. Junction Temperature 1.5 Source-Drain Diode Forward Voltage 0.5 1000 VGS = 10 V 0.4 ID = 250 µA 0.3 IGSS - (nA) V GS(th) Variance (V) 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 0.2 0.1 100 VGS = 5 V - 0.0 10 - 0.1 - 0.2 - 0.3 - 50 1 - 25 0 25 50 75 100 125 150 25 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature 50 75 100 125 TJ - Junction Temperature (°C) 150 IGSS vs. Temperature 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 350 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71609. www.vishay.com 4 Document Number: 71609 S-83053-Rev. E, 29-Dec-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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