TP0202

TP0202T Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –20 rDS(on) Max (W) 1.4 @ VGS = –10 V 3.5 @ VGS = –4.5 V VGS(th) (V) –1.3 to – 3 V –1.3 to – 3 V ID (A) –0.41 –0.27 FEATURES D D D D D High-Side Switching Low On-Resistance: 0.9 W Low Threshold: –2.1 V Fast Switching Speed: 18 ns Low Input Capacitance: 55 pF BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control TO-236 (SOT-23) G 1 3 D Marking Code: P3wll P3 = Part Number Code for TP0202T w = Week Code ll = Lot Traceability S 2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. For applications information see AN804. TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limit –20 "20 –0.41 –0.26 –0.75 0.35 0.22 357 –55 to 150 Unit V A W _C/W _C Document Number: 70208 S-04279—Rev. G, 16-Jul-01 www.vishay.com 11-1 TP0202T Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-Resistanceb Forward Transconductanceb Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = –10 mA VDS = VGS, ID = –0.25 mA VDS = 0 V, VGS = "20 V VDS = –16 V, VGS = 0 V TJ = 55_C VDS = –10 V, VGS = –10 V VGS = –4.5 V, ID = –0.05 A VGS = –10 V, ID = –0.2 A VDS = –10 V, ID = –0.2 A IS = –0.25 A, VGS = 0 V 250 –0.5 –0.75 1.7 0.9 600 –0.9 –1.5 3.5 1.4 W mS V –20 –1.3 –25 –2.1 –3 "100 –1 –10 mA A V nA Symbol Test Conditions Min Typa Max Unit Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = –15 V, VGS = 0 V, f = 1 MHz VDS –16 V, VGS =–10 V, ID ^ –200 mA 2700 500 600 55 50 18 pF pC Switchingc td(on) Turn-On Time tr td(off) tf Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. VDD = –15 V, RL = 75 W ID ^ –0.2 A, VGEN = –10 V RG = 6 W 8 20 20 30 12 30 ns 35 40 VPBP02 Turn-Off Time www.vishay.com 11-2 Document Number: 70208 S-04279—Rev. G, 16-Jul-01 TP0202T Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) –0.8 Output Characteristics –5 V –1.0 Transfer Characteristics TA = –55_C –0.8 25_C 125_C –0.6 –0.6 ID – Drain Current (A) VGS = –10 thru –6 V ID – Drain Current (A) –0.4 –4 V –0.2 –3 V 0.0 0 –1 –2 –3 –4 –0.4 –0.2 0.0 0.0 –1.5 –3.0 –4.5 –6.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) 5 On-Resistance vs. Gate-Source Voltage 5 On-Resistance vs. Drain Current rDS(on) – On-Resistance ( Ω ) ID = –200 mA 3 rDS(on) – On-Resistance ( Ω ) 4 4 3 VGS = –4.5 V 2 VGS = –10 V 1 2 1 ID = –50 mA 0 0 –4 –8 –12 –16 –20 0 0.0 –0.1 –0.2 –0.3 –0.4 –0.5 VGS – Gate-to-Source Voltage (V) ID – Drain Current (A) 180 160 140 C – Capacitance (pF) 120 100 80 60 40 20 0 0 –4 Crss Ciss Coss VGS = –0 V f = 1 MHz Capacitance –20 ID = –200 mA VGS – Gate-to-Source Voltage (V) –15 Gate Charge –10 VDS = –10 V VDS = –16 V –5 0 –8 –12 –16 –20 0 1000 2000 3000 4000 5000 6000 VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC) Document Number: 70208 S-04279—Rev. G, 16-Jul-01 www.vishay.com 11-3 TP0202T Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance vs. Junction Temperature 1.5 1.4 1.3 rDS(on) – On-Resistance (W) (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –50 –0.001 –25 0 25 50 75 100 125 150 0 VGS = –4.5 V ID = –50 mA VGS = –10 V ID = –200 mA IS – Source Current (A) –10.000 Source-Drain Diode Forward Voltage –1.000 TA = 150_C –0.100 TA = 25_C –0.010 –0.4 –0.8 –1.2 –1.6 –2.0 –2.4 –2.8 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) Threshold Voltage Variance Over Temperature 0.50 0.25 VGS(th) – Variance (V) 0.00 ID = –250 mA –0.25 –0.50 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 11-4 Document Number: 70208 S-04279—Rev. G, 16-Jul-01