TSSP58P38
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Vishay Semiconductors
IR Detector for Mid Range Proximity Sensor
FEATURES
• Up to 2 m for proximity sensing
• Receives 38 kHz modulated signal
• Photo detector and preamplifier in one package
• Low supply current
• Shielding against EMI
• Visible light is suppressed by IR filter
1
• Insensitive to supply voltage ripple and noise
2
3
• Supply voltage: 2.5 V to 5.5 V
19026
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
3D 3D
Product Page
3D Models
Calculators
Marking
MECHANICAL DATA
Packages
Pinning
1 = OUT, 2 = GND, 3 = VS
Holders
Bends and Cuts
ORDERING CODE
DESCRIPTION
TSSP58P38 - 1500 pieces in bags
The TSSP58P38 is a compact infrared detector module for
proximity sensing application. It receives 38 kHz modulated
signals and has a peak sensitivity of 940 nm.
APPLICATIONS
• Object approach detection for activation of displays and
user consoles, signaling of alarms, etc.
The length of the detector’s output pulse varies in proportion
to the amount of light reflected from the object being
detected.
• Simple gesture controls
• Differentiation of car arrival, static, car departure in
parking lots
• Reflective sensors for toilet flush
• Navigational sensor for robotics
BLOCK DIAGRAM
PROXIMITY SENSING
+3 V
16833_5
3
33 kΩ
IR emitter
VS
Envelope
signal
1
Input
AGC
Band
pass
Demodulator
38 kHz
OUT
+3 V
2
PIN
Control circuit
Out to
μC
GND
TSSP58P38
Rev. 1.9, 13-Apr-2022
1
Document Number: 82476
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSSP58P38
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Vishay Semiconductors
PARTS TABLE
Carrier frequency
38 kHz
TSSP58P38
Package
Minicast
Pinning
1 = OUT, 2 = GND, 3 = VS
Dimensions (mm)
5.0 W x 6.95 H x 4.8 D
Mounting
Leaded
Application
Proximity sensors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
Supply voltage (pin 3)
TEST CONDITION
VS
-0.3 to +6
V
Supply current (pin 3)
IS
5
mA
Output voltage (pin 1)
VO
-0.3 to 5.5
V
VS - VO
-0.3 to (VS + 0.3)
V
IO
5
mA
Voltage at output to supply
Output current (pin 1)
Junction temperature
Storage temperature range
Operating temperature range
Power consumption
Tamb ≤ 85 °C
UNIT
Tj
100
°C
Tstg
-25 to +85
°C
Tamb
-25 to +85
°C
Ptot
10
mW
Note
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating condtions for extended periods may affect the device reliability
ELECTRICAL AND OPTICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Supply current (pin 3)
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
Ee = 0, VS = 5 V
ISD
0.55
0.7
0.9
mA
Ev = 40 klx, sunlight
ISH
-
0.8
-
mA
Supply voltage
UNIT
VS
2.5
-
5.5
V
Receiving distance
Direct line of sight,
test signal see fig. 1,
IR diode TSAL6200, IF = 50 mA
d
-
18
-
m
Output voltage low (pin 1)
IOSL = 0.5 mA, Ee = 0.7 mW/m2,
test signal see fig. 1
VOSL
-
-
100
mV
Minimum irradiance
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee min.
-
0.2
0.4
mW/m2
Maximum irradiance
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee max.
50
-
-
W/m2
Angle of half receiving distance
ϕ1/2
-
± 45
-
deg
Directivity
Rev. 1.9, 13-Apr-2022
2
Document Number: 82476
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSSP58P38
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Optical Test Signal
Ee min. - Threshold Irradiance (mW/m2)
Ee
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, t = 10 ms)
t
t pi *
T
10/f0 is recommended for optimal function
* tpi
VO
Output Signal
1)
2)
VOH
16110_4
7/f0 < td < 15/f0
tpi - 5/f0 < tpo < tpi + 6/f 0
VOL
td 1)
tpo
2)
5.0
Correlation with Ambient Light Sources:
4.5 10 W/m2 = 1.4 kLx (Std. illum. A, T = 2855 K)
10
W/m2 = 8.2 kLx (Daylight, T = 5900 K)
4.0
3.5
2.5
2.0
1.5
1.0
0.5
0
0.01
t
Ee min. - Threshold Irradiance (mW/m2)
tpo - Output Pulse Width (ms)
Output Pulse Width
0.8
Input Burst Length
0.7
0.6
0.5
0.4
0.3
λ = 950 nm,
Optical Test Signal, Fig.1
0.1
0
0.1
1
10
2
10
10
3
100
1.0
f = f0
0.8
0.7
f = 30 kHz
0.6
0.5
f = 20 kHz
0.4
f = 10 kHz
0.3
0.2
0.1
f = 100 Hz
0
1
10
10
100
1000
ΔVsRMS - AC Voltage on DC Supply Voltage (mV)
Fig. 2 - Pulse Length and Sensitivity in Dark Ambient
Fig. 5 - Sensitivity vs. Supply Voltage Disturbances
1.0
200
0.9
180
tpo - Output Pulse Width (ms)
E e min./Ee - Rel. Responsivity
10
0.9
4
Ee - Irradiance (mW/m2)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
f = f0 ± 5 %
Δf (3 dB) = f0/10
0.1
1
Fig. 4 - Sensitivity in Bright Ambient
1.0
0.9
0.1
Ee - Ambient DC Irradiance (W/m2)
Fig. 1 - Output Active Low
0.2
Wavelength of Ambient
Illumination: λ = 950 nm
3.0
160
140
120
100
80
60
40
Burst length = 300 ms, f = fO
20
0.0
0
25
30
35
40
45
0.1
50
22088
f/f0 - Relative Frequency
Fig. 3 - Frequency Dependence of Responsivity
Rev. 1.9, 13-Apr-2022
1
10
100
Ee - Irradiance (mW/m2)
Fig. 6 - Maximum Output Pulse Width vs. Irradiance
3
Document Number: 82476
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSSP58P38
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Vishay Semiconductors
1.2
0.35
Relative Response Distance
Ee min. - Sensitivity (mW/m2)
0.40
0.30
0.25
0.20
0.15
0.10
0.05
0
-30
-10
10
30
50
70
1.0
0.8
0.6
0.4
Directivity Characteristic of a
Reflective Sensor using
VSLB3940 and TSSP58P38
0.2
0
-80
90
-60
-40
-20
Tamb - Ambient Temperature (°C)
0
20
40
80
60
Angle (°)
Fig. 7 - Sensitivity vs. Ambient Temperature
Fig. 10 - Angle Characteristic
Axis Title
10000
140
Emitter: VSLB3940
0.9
120
0.8
100
0.7
0.6
tpo (ms)
1000
1st line
2nd line
2nd line
S(λ)rel. - Relative Spectral Sensitivity
1.0
0.5
0.4
60
IF = 100 mA
40
100
0.3
80
0.2
20
0.1
0
IF = 10 mA
0
750
850
950
1050
0.0
10
1150
0.4
IF = 30 mA IF = 50 mA
0.8
1.2
1.6
2.0
2.4
Response Distance (m)
λ - Wavelength (nm)
21425
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
Fig. 11 - tpo vs. Distance Kodak Gray Card Plus 15 %
7
800
6
700
5
dmax./dmin.
trepeat min. (ms)
600
500
400
300
4
3
2
200
1
100
0
10 20 30 40 50 60 70 80 90 100 110 120
0
0
20
40
60
80
100 120 140 160 180
tpi (ms)
tpi (ms)
Fig. 12 - Dynamic Range of Sensor vs. tpi
Fig. 9 - Max. Rate of Bursts
Rev. 1.9, 13-Apr-2022
4
Document Number: 82476
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSSP58P38
www.vishay.com
Vishay Semiconductors
The typical application of the TSSP58P38 is a reflective sensor with analog information contained in its output. Such a sensor
is evaluating the time required by the AGC to suppress a quasi continuous signal. The time required to suppress such a signal
is longer when the signal is strong than when the signal is weak, resulting in a pulse length corresponding to the distance of an
object from the sensor. This kind of analog information can be evaluated by a microcontroller. The absolute amount of reflected
light depends much on the environment and is not evaluated. Only sudden changes of the amount of reflected light, and
therefore changes in the pulse width, are evaluated using this application.
Example of a signal pattern:
trepeat = 500 ms
tpi = 120 ms, 38 kHz
Optical signal
Response of the
TSSP58P38
(strong reflection)
Response of the
TSSP58P38
(weak reflection)
Example for a sensor hardware:
IR Receiver
TSSP58P38
Emitter
TSAL6200
Separation to avoid
crosstalk by stray light inside
the housing
There should be no common window in front of the emitter
and receiver in order to avoid crosstalk by guided light
through the window.
The logarithmic characteristic of the AGC in the TSSP58P38
results in an almost linear relationship between distance and
pulse width. Ambient light has also some impact to the pulse
width of this kind of sensor, making the pulse shorter.
Rev. 1.9, 13-Apr-2022
5
Document Number: 82476
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSSP58P38
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
5
4.8
(4)
2.8
(5.55)
6.95 ± 0.3
8.25 ± 0.3
R2
0.9
1.1
30.5 ± 0.5
(1.54)
0.85 max.
0.7 max.
2.54 nom.
2.54 nom.
0.5 max.
1.2 ± 0.2
Marking area
technical drawings
according to DIN
specifications
Not indicated to lerances ± 0.2
Drawing-No.: 6.550-5263.01-4
Issue: 12; 16.04.10
19009
Rev. 1.9, 13-Apr-2022
R2
6
Document Number: 82476
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000