U2D-M3/5BT

U2B, U2C, U2D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Oxide planar chip junction • Ultrafast recovery time • Low forward voltage, low power losses • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SMB (DO-214AA) TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, DC/DC converters or polarity protection application. PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 100 V, 150 V, 200 V IFSM 50 A trr 20 ns VF at IF = 2.0 A 0.76 V TJ max. 150 °C Package SMB (DO-214AA) Circuit configuration Single MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 and M3 suffix meet JESD 201 class 2 whisker test per Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code U2B U2C U2D U2B U2C U2D 100 150 200 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A TJ, TSTG -55 to +150 °C Operating junction and storage temperature range V Revision: 09-Aug-2018 Document Number: 89096 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 U2B, U2C, U2D www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Instantaneous forward voltage IF = 2 A Reverse current Rated VR VF (1) TA = 100 °C TA = 25 °C IR (2) TA = 100 °C IF = 0.5 A, IR = 1.0 A, lrr = 0.25 A Reverse recovery time SYMBOL TA = 25 °C TYP. MAX. 0.86 0.90 0.76 0.83 - 10 180 350 - 20 27 - 35 - TA = 25 °C IF = 2.0 A, dI/dt = 50 A/μs, VR = 30 V, lrr = 0.1 IRM Storage charge IF = 2.0 A, dI/dt = 50 A/μs, VR = 30 V, lrr = 0.1 IRM Typical junction capacitance 4.0 V, 1 MHz trr TA = 25 °C TA = 100 °C TA = 25 °C Qrr TA = 100 °C CJ UNIT V μA ns 9 - 19 - 16 - pF U2D UNIT nC Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RJA Typical thermal resistance U2B U2C (1) 105 RJM (1) °C/W 18 Note (1) Free air, mounted on recommended copper pad area. Thermal resistance R JA - junction to ambient, RJM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.099 52T 750 7" diameter plastic tape and reel U2D-E3/5BT 0.099 5BT 3200 13" diameter plastic tape and reel U2D-M3/52T 0.099 52T 750 7" diameter plastic tape and reel U2D-M3/5BT 0.099 5BT 3200 13" diameter plastic tape and reel U2D-E3/52T RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 2.0 D = 0.8 Resistive or Inductive Load D = 0.3 D = 0.5 Average Power Loss (W) Average Forward Rectified Current (A) 3.0 2.0 1.0 0 1.6 D = 0.2 D = 1.0 D = 0.1 1.2 0.8 T 0.4 D = tp/T tp 1.6 2.0 0 80 90 100 110 120 130 140 150 0 0.4 0.8 1.2 2.4 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 09-Aug-2018 Document Number: 89096 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 U2B, U2C, U2D www.vishay.com Vishay General Semiconductor 100 10 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 150 °C 1 TA = 100 °C TA = 125 °C 0.1 TA = 25 °C 0.01 0.1 0.3 0.5 0.7 0.9 1.1 10 1 0.1 1.3 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 1000 Transient Thermal Impedance (°C/W) 10 000 Instantaneous Reverse Current (μA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C 1000 TA = 125 °C TA = 100 °C 100 10 TA = 25 °C 1 0.1 10 20 30 40 50 60 70 80 90 Junction to Ambient 100 10 1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 09-Aug-2018 Document Number: 89096 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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