V12PM12-M3/86A

V12P12 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 6 A FEATURES eSMP® Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology K • Low forward voltage drop, low power losses • High efficiency operation 1 • Meets MSL level 1, per LF maximum peak of 260 °C 2 J-STD-020, • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 SMPC (TO-277A) K Anode 1 Cathode Anode 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS ADDITIONAL RESOURCES For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. 3D 3D 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 12 A VRRM 120 V IFSM 150 A EAS 100 mJ VF at IF = 12 A 0.63 V TJ max. 150 °C Package SMPC (TO-277A) Circuit configuration Single Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code V12P12 UNIT V1212 Maximum repetitive peak reverse voltage VRRM 120 V Maximum average forward rectified current (fig. 1) IF(AV) 12 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 150 A Non-repetitive avalanche energy at IAS = 2.0 A, L = 50 mH, TJ = 25 °C EAS 100 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C Operating junction and storage temperature range IRRM 0.5 A TJ, TSTG -40 to +150 °C Revision: 11-Dec-2019 Document Number: 89094 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V12P12 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 1.0 mA IF = 6 A SYMBOL TYP. MAX. UNIT VBR 120 (minimum) - V 0.57 - 0.72 0.80 0.51 - 0.63 0.70 TA = 25 °C 13 - μA TA = 125 °C 7 - mA 50 500 μA 16 50 mA TA = 25 °C IF = 12 A Instantaneous forward voltage TA = 25 °C VF (1) IF = 6 A TA = 125 °C IF = 12 A VR = 90 V Reverse current VR = 120 V TA = 25 °C IR (2) TA = 125 °C V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RθJA Typical thermal resistance V12P12 (1) 60 RθJL 4 UNIT °C/W Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V12P12-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel V12P12-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel V12P12HM3_A/H (1) 0.10 H 1500 7" diameter plastic tape and reel V12P12HM3_A/I (1) 0.10 I 6500 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 11-Dec-2019 Document Number: 89094 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V12P12 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title 10000 100 Resistive or Inductive Load 12 10 8 6 TL Measured at the Cathode Band Terminal 4 2 0 100 110 120 130 140 10 TJ = 150 °C TJ = 125 °C 1 0.1 100 0.01 TJ = 25 °C 0.001 TJ = -40 °C 10 0.0001 150 20 40 Lead Temperature (°C) 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics 10 000 11 D = 0.3 10 D = 0.2 9 8 D = 0.1 7 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.5 D = 0.8 Junction Capacitance (pF) Average Power Loss (W) 1000 TJ = 100 °C 1 t li 2nd line Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) 14 D = 1.0 6 5 T 4 3 2 D = tp/T 1 1000 100 tp 10 0 0 2 4 6 8 10 12 0.1 14 1 10 100 Reverse Voltage (V) Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Axis Title 100 10000 T J = 150 °C 10 1000 T J = 125 ° C 1 T J = 100 °C 100 T J = 25 °C 0.1 T J = -40 °C 0.01 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Transient Thermal Impedance (°C/W) 2nd line Instantaneous Forward Current (A) 100 Junction to Ambient 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 11-Dec-2019 Document Number: 89094 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V12P12 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPC (TO-277A) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 11-Dec-2019 Document Number: 89094 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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