VBUS051CD-HD1-G-08

Not for New Designs VBUS051CD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD Protection Diode FEATURES • Ultra compact LLP1006-2L package • Low package height < 0.4 mm 1 2 • 1-line ESD protection 20856 • Low leakage current < 0.1 μA • Low load capacitance CD = 0.6 pF 20855 • ESD immunity to IEC 61000-4-2 ± 15 kV contact discharge ± 15 kV air discharge MARKING (example only) • High surge current acc. IEC 61000-4-5 IPP > 2 A XY • Soldering can be checked by standard vision inspection; no X-ray necessary 21121 • Pin plating NiPdAu (e4) no whisker growth Bar = cathode marking X = date code Y = type code (see table below) • PATENT(S): www.vishay.com/patents • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models ORDERING INFORMATION ORDERING CODE TAPED UNITS PER REEL (8 MM TAPE ON 7" REEL) MINIMUM ORDER QUANTITY VBUS051CD-HD1-G-08 8000 8000 DEVICE NAME VBUS051CD-HD1 PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING VBUS051CD-HD1 LLP1006-2L T 0.72 mg UL 94 V-0 MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS MSL level 1 Peak temperature max. 260 °C (according J-STD-020) ABSOLUTE MAXIMUM RATINGS VBUS051CD-HD1 PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature TEST CONDITIONS SYMBOL VALUE UNIT Acc. IEC 61000-4-5; tp = 8/20 μs; single shot IPPM 2 A Acc. IEC 61000-4-5; tp = 8/20 μs; single shot PPP Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature VESD 28 W ± 15 kV ± 15 kV TJ -40 to +125 °C TSTG -40 to +150 °C PATENT(S): www.vishay.com/patents This Vishay product is protected by one or more United States and international patents. Rev. 1.7, 20-May-2021 Document Number: 81195 1 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Designs VBUS051CD-HD1 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS VBUS051CD-HD1 (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of line which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 5.5 V Reverse voltage At IR = 0.1 μA pin 2 to pin 1 VR 5.5 - - V Reverse current At VR = VRWM = 5.5 V; pin 2 to pin 1 IR - < 0.01 0.1 μA At IR = 1 mA pin 2 to pin 1 VBR 6.5 7.6 8.5 V Reverse clamping voltage At IPP = 2 A; acc. IEC 61000-4-5 pin 2 to pin 1 VC - - 14 V Forward clamping voltage At IF = 2 A; acc. IEC 61000-4-5 pin 1 to pin 2 VF - - 3.5 V At VR = 0 V; f = 1 MHz pin 2 to pin 1 CD - 0.6 0.8 pF Protection paths Reverse stand-off voltage Reverse breakdown voltage Capacitance APPLICATION NOTE The VBUS051CD-HD1 is an ESD protection device with the characteristic of a Z-diode with a high ESD immunity and a very low capacitance which makes it usable for high frequency applications like USB2.0 or HDMI. With the VBUS051CD-HD1 one high speed data line can be protected against transient voltage signals like ESD (electro static discharge). Connected to the data line (pin 2) and to ground (pin 1) negative transients will be clamped close below the ground level while positive transients will be clamped close above the 5.5 V working range. The clamping behavior of the VBUS051CD-HD1 is bidirectional but asymmetrical (BiAs) and so it offers the best protection for applications running up to 5 V. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Axis Title Axis Title 120 10000 10000 100 Rise time = 0.7 ns to 1 ns 8 µs to 100 % 100 80 1000 40 60 1st line 2nd line 53 2nd line IPPM (%) 60 2nd line 1000 1st line 2nd line 2nd line IESD (%) 80 20 µs to 50 % 40 100 27 100 20 20 0 0 10 -10 0 20557 t (ns) 2nd line Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 Ω/150 pF) Rev. 1.7, 20-May-2021 10 0 10 20 30 40 50 60 70 80 90 100 20548 10 20 30 40 t (µs) 2nd line Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 Document Number: 81195 2 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Designs VBUS051CD-HD1 www.vishay.com Vishay Semiconductors 1 16 f = 1 MHz 14 0.8 12 0.7 10 0.6 8 VC (V) CD (pF) 0.9 0.5 0.4 Positive surge Measured acc. IEC 61000-4-5 (8/20 µs - wave form) 6 4 0.3 2 0.2 0 0.1 -2 0 VC Negative surge -4 0 1 2 3 21897 VR (V) 21894 0 4 Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR 1 2 3 IPP (A) Fig. 6 - Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP 100 102 101 80 Acc. IEC 61000-4-2 +8 kV contact discharge VC-ESD (V) IF (mA) 1 10-1 10-2 10-3 60 40 20 10-4 0 10-5 10-6 0.4 0.6 0.8 21895 1 -20 -10 1.2 VF (V) 21898 Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF 0 10 20 30 40 50 60 70 80 90 t (ns) Fig. 7 - Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) 20 9 8 0 7 VC-ESD (V) VR (V) 6 5 4 3 -20 -40 Acc. IEC 61000-4-2 -8 kV contact discharge -60 2 -80 1 0 0.01 21896 0.1 1 10 100 1000 10 000 IR (µA) Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR Rev. 1.7, 20-May-2021 -100 -10 21899 0 10 20 30 40 50 60 70 80 90 t (ns) Fig. 8 - Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) Document Number: 81195 3 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Designs VBUS051CD-HD1 www.vishay.com Vishay Semiconductors 200 Acc. IEC 61000-4-2 contact discharge 150 VC-ESD (V) 100 50 VC-ESD 0 - 50 - 100 - 150 - 200 0 21900 5 10 15 20 VESD (kV) Fig. 9 - Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2) Rev. 1.7, 20-May-2021 Document Number: 81195 4 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Designs VBUS051CD-HD1 www.vishay.com Vishay Semiconductors 0.25 [0.010] 0.15 [0.006] PACKAGE DIMENSIONS in millimeters (inches): LLP1006-2L 0.55 [0.022] 0.45 [0.018] 0.3 [0.012] 0.2 [0.008] 0.65 [0.026] 0.55 [0.022] 0.125 [0.005] ref. Orientation identification 0.05 [0.002] 0 [0.000] 0.4 [0.016] 0.33 [0.013] 0.45 [0.018] 0.35 [0.014] 1.05 [0.041] 0.95 [0.037] 1 [0.039] 0.2 [0.008] 0.5 [0.020] 0.6 [0.024] Foot print recommendation: Solder resist mask Solder pad 0.05 [0.002] 0.5 [0.020] 0.25 [0.010] Pad Design Patented: ( P US 9.018.537 B2) Document no.: S8-V-3906.04-005 (4) Rev. 7 - Date: 11.May 2016 20812 Unreeling direction LLP1006-2X Orientation identification Top view S8-V-3906.04-017 (4) 02.05.2017 22965 Rev. 1.7, 20-May-2021 Pad layout - view from top seen at bottom side Document Number: 81195 5 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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