VFT6045C-M3/4W

VFT6045C-M3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A FEATURES TMBS ® • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 1 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 TYPICAL APPLICATIONS VFT6045C PIN 1 For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PIN 2 PIN 3 MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 45 V IFSM 320 A VF at IF = 30 A 0.47 V TJ max. 150 °C Package ITO-220AB Circuit configuration Common cathode Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) SYMBOL VFT6045C UNIT VRRM 45 V IF(AV) per diode 60 A 30 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 320 Isolation voltage from terminal to heatsink t = 1 min VAC 1500 A V Operating junction and storage temperature range TJ, TSTG -40 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 10 A IF = 15 A Instantaneous forward voltage per diode TA = 25 °C IF = 30 A VF (1) IF = 10 A IF = 15 A TA = 125 °C IF = 30 A Reverse current per diode VR = 45 V TA = 25 °C TA = 125 °C IR (2) TYP. MAX. 0.44 - 0.47 - 0.54 0.64 0.33 - UNIT V 0.37 - 0.47 0.56 - 3000 μA 18 50 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms Revision: 19-Mar-18 Document Number: 89357 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VFT6045C-M3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL per diode Typical thermal resistance per device VFT6045C UNIT 5.0 RJC °C/W 3.5 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N ITO-220AB UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.76 4W 50/tube Tube VFT6045C-M3/4W RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Forward Current (A) Average Forward Rectified Current (A) 70 60 50 40 30 20 10 0 10 TA = 100 °C TA = 125 °C 1 TA = 25 °C 0.1 0 25 50 75 125 100 150 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Case Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 100 D = 0.5 D = 0.3 D = 0.8 16 14 D = 0.2 12 10 D = 1.0 D = 0.1 8 T 6 4 2 D = tp/T tp 0 Instantaneous Reverse Current (mA) 20 18 Average Power Loss (W) TA = 150 °C TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 0.001 0 5 10 15 20 25 30 35 20 40 60 80 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 19-Mar-18 Document Number: 89357 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VFT6045C-M3 www.vishay.com Vishay General Semiconductor 10 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 100 000 10 000 1000 100 0.1 1 10 100 Junction to Case 1 0.1 0.01 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Revision: 19-Mar-18 Document Number: 89357 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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