V40150C, VB40150C, VI40150C
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
FEATURES
TMBS ®
TO-220AB
TO-262AA
• Trench MOS Schottky technology
K
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
1
V40150C
2
3
1
2
3
VI40150C
PIN 1
PIN 2
PIN 1
PIN 2
PIN 3
CASE
PIN 3
K
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for TO-263AB package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
D2PAK (TO-263AB)
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
K
2
MECHANICAL DATA
1
VB40150C
PIN 1
PIN 2
DESIGN SUPPORT TOOLS
Case: TO-220AB, TO-262AA, and D2PAK (TO-263AB),
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
K
HEATSINK
click logo to get started
Models
Available
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
VRRM
150 V
IFSM
160 A
VF at IF = 20 A
0.75 V
TJ max.
150 °C
Package
TO-220AB, TO-262AA,
D2PAK (TO-263AB)
Circuit configuration
Common cathode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
VRRM
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IF(AV)
IFSM
V40150C
VB40150C
150
40
20
VI40150C
UNIT
V
A
160
A
dV/dt
10 000
V/μs
TJ, TSTG
-55 to +150
°C
Revision: 19-Jun-2018
Document Number: 89250
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40150C, VB40150C, VI40150C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 10 A
Instantaneous forward voltage per diode
TA = 25 °C
IF = 20 A
VF (1)
IF = 5 A
IF = 10 A
TA = 125 °C
Reverse current per diode
VR = 150 V
MAX.
0.69
-
0.84
-
1.15
1.43
0.55
-
UNIT
V
0.64
-
0.75
0.82
TA = 25 °C
2
-
μA
TA = 125 °C
2.5
-
mA
-
250
μA
5
25
mA
VI40150C
UNIT
IF = 20 A
VR = 100 V
TYP.
TA = 25 °C
IR (2)
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
V40150C
RJC
VB40150C
1.8
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
50/tube
Tube
TO-220AB
V40150C-M3/4W
1.89
4W
TO-262AA
VI40150C-M3/4W
1.46
4W
50/tube
Tube
TO-263AB
VB40150C-M3/I
1.39
I
800/reel
Tape and reel
Revision: 19-Jun-2018
Document Number: 89250
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40150C, VB40150C, VI40150C
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Resistive or Inductive Load
Instantaneous Reverse Current (mA)
Average Forward Rectified Current (A)
50
40
30
20
10
Mounted on Specific Heatsink
0
25
50
75
100
1
TA = 125 °C
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
125
150
175
10
20
30
40
50
60
70
80
90
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
20
Transient Thermal Impedance (°C/W)
D = 0.3
16
D = 0.2
14
12
D = 1.0
10
D = 0.1
8
T
6
4
2
D = tp/T
tp
0
0
2
4
6
8
10
12
14
16
18
100
10
D = 0.8
D = 0.5
18
Average Power Loss (W)
TA = 150 °C
0.0001
0
20
22
Junction to Case
1
0.1
0.01
24
0.1
1
10
100
Average Forward Current (A)
t - Pulse Duration (s)
Fig. 2 - Forward Power Dissipation Characteristics
Fig. 5 - Typical Transient Thermal Impedance
100
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
10
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
1000
100
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Junction Capacitance
100
Revision: 19-Jun-2018
Document Number: 89250
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40150C, VB40150C, VI40150C
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.950 (24.13)
0.920 (23.37)
1
PIN
2 3
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.401 (10.19)
0.381 (9.68)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
Revision: 19-Jun-2018
Document Number: 89250
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40150C, VB40150C, VI40150C
www.vishay.com
Vishay General Semiconductor
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591(15.00)
0.055 (1.40)
0.045 (1.14)
0.42
MIN.
(10.66)
0.33
(8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0-0.01 (0-0.254)
0.037 (0.940)
0.027 (0.686)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.15
(3.81) MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
0.095 (2.41)
Revision: 19-Jun-2018
Document Number: 89250
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000