VOW137, VOW2611
www.vishay.com
Vishay Semiconductors
Widebody, High Isolation, High Speed Optocoupler, 10 MBd
FEATURES
• External creepage > 10 mm
• Reinforced isolation
NC 1
• Internal shield for very high input to output
noise isolation
8 VCC
A 2
7 VE
C 3
6 V0
NC 4
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
5 GND
APPLICATIONS
• Solar inverters
• Industrial motor drives
• Welding equipment
22660
• Isolated industrial communication
DESCRIPTION
• Ground loop elimination
Both 10 MBd widebody optocouplers consist of a GaAlAs
infrared emitting diode, optically coupled with an integrated
photo detector. The detector incorporating an integral
Faraday shield provides a high level of noise isolation,
required by high power switching applications.
• Noise isolation of sensitive circuits
AGENCY APPROVALS
The safety application model number covering all products
in this datasheet is VOW137. This model number should be
used when consulting safety agency documents.
Vishay’s 10 MBd widebody couplers feature a high level of
isolation distance, exhibiting an external creepage distance
of > 10 mm. This makes these parts ideal for applications
with working voltages exceeding 1000 V.
• UL1577
• cUL
• DIN EN 60747-5-5 (VDE 0884)
• CQC
ORDERING INFORMATION
V
O
W
#
#
#
#
-
X
PART NUMBER
0
#
PACKAGE OPTION
AGENCY CERTIFIED/PACKAGE
VDE, UL, cUL
#
T
DIPW-8
TAPE
AND
REEL
10.16 mm typ.
Option 7
0.75 mm
CMR (kV/μs)
10
25
DIP-8, 400 mil, widebody
VOW137-X001
VOW2611-X001
SMD-8, 400 mil, option 7, widebody
VOW137-X017T
VOW2611-X017T
TRUTH TABLE
LED
ENABLE
OUTPUT
On
H
L
Off
H
H
On
L
H
Off
L
H
On
NC
L
Off
NC
H
Rev. 1.0, 07-Aug-14
Document Number: 84157
1
For technical questions, contact: optocoupleranswers@vishay.com
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
INPUT
Average forward current
Reverse input voltage
Enable input voltage
Enable input current
Surge current
Input junction temperature
Output power dissipation
OUTPUT
Supply voltage
Output current
Output voltage
Output junction temperature
Output power dissipation
COUPLER
Isolation voltage
Storage temperature
Operating temperature
Lead solder temperature
Solder reflow temperature (1)
SYMBOL
VALUE
UNIT
IF
VR
VE
IE
mA
V
V
mA
mA
°C
mW
t = 100 μs
IFSM
TJ max.
Pdiss
20
5
VCC + 0.5 V
5
200
125
35
1 min maximum
VCC
IO
VO
TJ max.
Pdiss
7
50
7
125
85
V
mA
V
°C
mW
t = 1 min
VISO
Tstg
Tamb
5300
-55 to +150
-40 to +100
260
260
VRMS
°C
°C
°C
°C
for 10 s
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMDW). Refer to wave profile for soldering conditions for
through hole devices (DIPW).
RECOMMENDED OPERATING CONDITIONS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
MAX.
UNIT
-40
4.5
0
5
2
0
330
RL = 1 kΩ
Tamb
VCC
IFL
IFH
VEH
VEL
RL
N
100
5.5
250
15
VCC
0.8
4K
5
°C
V
μA
mA
V
V
Ω
-
Ptot - Maximum Power Dissipation (mW)
Operating temperature
Supply voltage
Input current low level
Input current high level
Logic high enable voltage
Logic low enable voltage
Output pull up resistor
Fanout
105
Output Detector
90
75
60
45
IR- LED
30
15
0
-40
-20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Dissipated Power vs. Ambient Temperature
Rev. 1.0, 07-Aug-14
Document Number: 84157
2
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ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 10 mA
VF
1.1
VR = 5 V
IR
1.4
1.7
V
0.01
10
μA
f = 1 MHz, VF = 0 V
CI
38
VE = 0.5 V, IF = 0 mA
ICCH
4.3
VE = VCC, IF = 0 mA
ICCH
3.3
VE = 0.5 V, IF = 10 mA
ICCL
4.3
13
mA
VE = VCC, IF = 10 mA
ICCL
3.3
6
mA
μA
INPUT
Input forward voltage
Reverse current
Input capacitance
pF
OUTPUT
High level supply current
Low level supply current
10
mA
mA
High level output current
VE = 2 V, VO = 5.5 V, IF = 250 μA
IOH
0.02
10
Low level output voltage
VE = 2 V, IF = 5 mA, IOL (sinking) = 13 mA
VOL
0.2
0.6
V
Input threshold current
VE = 2 V, VO = 0.6 V, IOL (sinking) = 13 mA
ITH
2.4
5
mA
Input-output capacitance
f = 1 MHz, Tamb = 25 °C
CIO
0.9
High level enable current
VE = 2 V
IEH
-0.6
-1.6
mA
Low level enable current
VE = 0.5 V
-0.8
-1.6
mA
0.8
V
IEL
High level enable voltage
VEH
Low level enable voltage
VEL
pF
2
V
Notes
• Over recommended temperature (Tamb = -40 °C to +100 °C), VCC = 5 V, IF = 7.5 mA unless otherwise specified. All typicals at Tamb = 25 °C,
VCC = 5 V.
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
SWITCHING CHARACTERISTICS
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Propagation delay time to
high output level
PARAMETER
RL = 350 Ω, CL = 15 pF
tPLH
20
49
100
ns
Propagation delay time to
low output level
RL = 350 Ω, CL = 15 pF
tPHL
25
46
100
ns
Pulse width distortion
RL = 350 Ω, CL = 15 pF
|tPHL - tPLH|
3.1
40
ns
40
ns
Propagation delay skew
RL = 350 Ω, CL = 15 pF
tPSK
16
Output rise time (10 % to 90 %)
RL = 350 Ω, CL = 15 pF
tr
14
ns
Output fall time (90 % to 10 %)
RL = 350 Ω, CL = 15 pF
tf
7
ns
Propagation delay time of
enable from VEH to VEL
RL = 350 Ω, CL = 15 pF,
VEL = 0 V, VEH = 3 V
tELH
11
ns
Propagation delay time of
enable from VEL to VEH
RL = 350 Ω, CL = 15 pF,
VEL = 0 V, VEH = 3 V
tEHL
9
ns
Notes
• Over recommended temperature (Tamb = -40 °C to +100 °C), VCC = 5 V, IF = 7.5 mA unless otherwise specified. All typicals at Tamb = 25 °C,
VCC = 5 V.
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Rev. 1.0, 07-Aug-14
Document Number: 84157
3
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VCC
Pulse gen.
Zo = 50 Ω
t f = t r = 5 ns
1
IF
2
Input IF
monitoring
node
RM
VCC 8
VE
7
VOUT
3
4
RL
Output VO
monitoring
node
6
5
GND
IF = 7.5 mA
IF = 3.75 mA
0 mA
Input IF
0.1 µF
VOH
1.5 V
VOL
Output VO
C L = 15 pF
t PHL
t PLH
Fig. 2 - Test Circuit for tPLH, tPHL, tr and tf
Input VE
monitoring node
Pulse gen.
Zo = 50 Ω
t f = t r = 5 ns
1
7.5 mA
IF
2
VCC 8
VE
7
VOUT
3
4
VCC
RL
0.1 µF
6
GND
3V
1.5 V
Output VO
monitoring
node
Input VE
CL = 15 pF
Output VO
tEHL
tELH
1.5 V
5
Fig. 3 - Test Circuit for tEHL, and tELH
COMMON MODE TRANSIENT IMMUNITY
PARAMETER
Common mode
transient immunity
TEST CONDITION
DEVICE
SYMBOL
MIN.
|VCM| = 1 kV, VCC = 5 V, IF = 0 mA (1)(2)(3)(4)
VOW137
|CMH|
10 000
|VCM| = 1 kV, VCC = 5 V, IF = 0 mA (1)(2)(5)
VOW2611
|CMH|
25 000
|VCM| = 1 kV, VCC = 5 V, IF = 7.5 mA (1)(2)(3)(4)
VOW137
|CML|
10 000
|VCM| = 1 kV, VCC = 5 V, IF = 7.5 mA (1)(2)(5)
VOW2611
|CML|
25 000
TYP.
MAX.
UNIT
V/μs
40 000
V/μs
V/μs
40 000
V/μs
Notes
(1) Over recommended temperature (T
amb = -40 °C to +100 °C), VCC = 5 V, IF = 7.5 mA unless otherwise specified. All typicals at Tamb = 25 °C,
VCC = 5 V.
(2) Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(3) With pulling V to logic high state will improve the CMR performance.
E
(4) VOW137 CMTI test circuit refer to figure 4.
(5) VOW2611 CMTI test circuit refer to figure 5.
VCC
IF
1
B
A
VFF
2
VCC 8
VE
7
VOUT
3
6
4
5
GND
RL
0.1 µF
bypass
Output VO
monitoring
node
VCM (PEAK)
VCM 0 V
Switch at A: IF = 0 mA
VO 5 V
VO 0.5 V
VO (min.)
Switch at B: IF = 7.5 mA
VO (max.)
CMH
CML
VCM
+
Pulse generator
ZO = 50 Ω
Fig. 4 - VOW137 Test Circuit for Common Mode Transient Immunity
Rev. 1.0, 07-Aug-14
Document Number: 84157
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VCC
IF
VCC
1
B
A
VFF
VE
2
VOUT
7
3
6
4
5
GND
RL
8
0.1 µF
bypass
Output VO
monitoring
node
VCM (PEAK)
VCM 0 V
Switch at A: IF = 0 mA
VO 5 V
VO 0.5 V
CMH
VO (min.)
Switch at B: IF = 7.5 mA
VO (max.)
CML
VCM
+
Pulse generator
ZO = 50 Ω
Fig. 5 - VOW2611 Test Circuit for Common Mode Transient Immunity
SAFETY AND INSULATION RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
MAXIMUM SAFETY RATINGS
Output safety power
PSO
700
mW
Input safety current
Isi
350
mA
Safety temperature
TS
150
°C
Comparative tracking index
CTI
250
INSULATION RATED PARAMETERS
Maximum withstanding isolation voltage
VISO
5300
VRMS
Maximum transient isolation voltage
t = 1 min
VIOTM
8000
Vpeak
Maximum repetitive peak isolation voltage
VIORM
1414
Vpeak
Insulation resistance
Tamb = 25 °C, VDC = 500 V
RIO
≥ 1012
Ω
Isolation resistance
Tamb = 100 °C, VDC = 500 V
RIO
≥ 1011
Ω
Input to output test voltage,
method b
VIORM x 1.875 = VPR, 100 % production test with tM = 1 s,
partial discharge < 5 pC
VPR
2651
Vpeak
Input to output test voltage,
method a
VIORM x 1.6 = VPR, 100 % production test with tM = 10 s,
partial discharge < 5 pC
VPR
2262
Vpeak
Climatic classification (according to IEC 68 part 1)
55/100/21
Environment (pollution degree in accordance to DIN VDE 0109)
2
Clearance distance (DIP-8, widebody)
≥ 10
mm
Creepage distance (DIP-8, widebody)
≥ 10
mm
≥ 0.4
mm
Insulation thickness
DTI
Note
• As per IEC 60747-5-5, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Rev. 1.0, 07-Aug-14
Document Number: 84157
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VF - Forward Voltage (V)
1.50
1.45
1.40
1.35
1.30
1.25
1.20
0
10
20
30
40
50
60
ITH - Input Threshold Off Current (mA)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
3.4
VCC = 5 V
3.2
RL = 1 kΩ
3.0
2.8
2.6
RL = 4 kΩ
2.4
2.2
2.0
-40
IF - Forward Current (mA)
0
20
40
60
80
100
Fig. 9 - Input Threshold Off Current vs. Ambient Temperature
0.30
-2.4
VOL - Low Level Output Voltage (V)
ΔVF/ΔTamb - Forward Voltage Coeff. (mW/K)
Fig. 6 - Forward Voltage vs. Forward Current
-2.2
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
0.25
VCC = 5.5 V
IF = 5 mA
0.20
IL = 16 mA
IL = 13 mA
0.15
0.10
IL = 6 mA
0.05
IL = 10 mA
0
1
10
-40
100
3.1
VCC = 5 V
2.9
2.8
2.7
2.6
2.5
RL = 4 kΩ
RL = 1 kΩ
2.4
2.3
2.2
2.1
-40
-20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 8 - Input Threshold On Current vs. Ambient Temperature
Rev. 1.0, 07-Aug-14
0
20
40
60
80
100
Fig. 10 - Low Level Output Voltage vs. Ambient Temperature
IOL - Low Level Output Current (mA)
Fig. 7 - Forward Voltage Coefficient vs. Forward Current
3.0
-20
Tamb - Ambient Temperature (°C)
IF - Forward Current (mA)
ITH - Input Threshold On Current (mA)
-20
Tamb - Ambient Temperature (°C)
120
VCC = 5.5 V
110
100
IF = 6 mA
IF = 10 mA
90
80
70
60
-40
-20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 11 - Low Level Output Current vs. Ambient Temperature
Document Number: 84157
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120
2.5
tp - Propagation Delay Time (ns)
IOH - High Level Output Current (nA)
www.vishay.com
VCC = 5.5 V
2.0
1.5
1.0
0.5
0
-40
-20
0
20
40
60
80
100
tPLH = 4 kΩ
80
40
tPHL = 350 Ω, 1 kΩ, 4 kΩ
20
0
100
5
7
VCC = 5 V
VO - Output Voltage (V)
4.5
4.0
RL = 1 kΩ
3.0
2.5
2.0
RL = 4 kΩ
1.0
RL = 350 Ω
0.5
0
0
1
2
3
4
F
RL = 4 kΩ
20
15
10
RL = 1 kΩ
100
tPLH = 1 kΩ
80
tPLH = 4 kΩ
60
tPLH = 350 Ω
20
0
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 14 - Propagation Delay vs. Ambient Temperature
Rev. 1.0, 07-Aug-14
RL = 350 Ω
5
0
-40
-20
0
20
40
60
80
100
Fig. 16 - Pulse Width Distortion vs. Ambient Temperature
PWD - Pulse Width Distortion (ns)
tp - Propagation Delay Time (ns)
VCC = 5 V
-20
= 7.5 mA
Tamb - Ambient Temperature (°C)
120
-40
15
25
5
Fig. 13 - Output Voltage vs. Forward Current
tPHL = 350 Ω, 1 kΩ, 4 kΩ
13
30
IF - Forward Input Current (mA)
40
11
Fig. 15 - Propagation Delay vs. Forward Current
PWD - Pulse Width Distortion (ns)
5.5
1.5
9
IF - Forward Current (mA)
Fig. 12 - High Level Output Current vs. Ambient Temperature
3.5
tPLH = 350 Ω
60
Tamb - Ambient Temperature (°C)
5.0
tPLH = 1 kΩ
50
RL = 4 kΩ
40
30
RL = 1 kΩ
20
10
RL = 350 Ω
0
-10
5
7
9
11
13
15
IF - Forward Current (mA)
Fig. 17 - Pulse Width Distortion vs. Forward Current
Document Number: 84157
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0.30
tr, RL = 4 kΩ
140
VOL - Low Level Output Voltage (V)
tr,f - Rise and Fall Time (ns)
160
120
tf, RL = 350 Ω
tf, RL = 1 kΩ
tf, RL = 4 kΩ
100
80
60
tr, RL = 350 Ω
tr, RL = 1 kΩ
40
20
0
0.25
VCC = 5.5 V
IF = 5 mA
0.20
IL = 16 mA
IL = 13 mA
0.15
0.10
0.05
IL = 6 mA
IL = 10 mA
0
-40
-20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
-50 -30 -10
10
30
50
70
90
110
Tamb - Ambient Temperature (°C)
Fig. 18 - Rise and Fall Time vs. Ambient Temperature
Fig. 21 - Low Level Output Voltage vs. Ambient Temperature
tr,f - Rise and Fall Time (ns)
160
tr, RL = 4 kΩ
140
120
tf, RL = 350 Ω
tf, RL = 1 kΩ
tf, RL = 4 kΩ
100
80
60
tr, RL = 350 Ω
tr, RL = 1 kΩ
40
20
0
5
6
7
8
9
10 11 12 13 14 15
IF - Forward Current (mA)
tE - Enable Propagation Delay (ns)
Fig. 19 - Rise and Fall Time vs. Forward Current
40
35
tELH = 4 kΩ
30
25
20
tELH = 1 kΩ
tELH = 350 Ω
15
10
5
tEHL = 350 Ω
tEHL = 1 kΩ, 4 kΩ
0
-40
-20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 20 - Enable Propagation Delay vs. Ambient Temperature
Rev. 1.0, 07-Aug-14
Document Number: 84157
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PACKAGE DIMENSIONS in millimeters
DIP-8, widebody
3.50 ± 0.40
11.00 max.
3.90 ± 0.10
0.51 min.
11.30 max.
10.90 ± 0.15
1.32 ± 0.05
9.00 ± 0.15
10.16 typ.
2.54 nom.
7
0.25 ± 0.05 .0° nom.
1.75 ± 0.15
8
7
6
5
1
2
3
4
11.30 max.
10.90 ± 0.15
1.32 ± 0.05
3.90 ± 0.10
0.50 ± 0.05
Pin One I.D.
SMD-8, widebody, (Option 7)
0.25 ± 0.05
0.75 ± 0.25
10.16 min.
1 ± 0.15
1.75 ± 0.15
7
6
5
1
2
3
4
Recommended Footprint
5
.2
R0
2.54
8
Lead coplanarity
0.10 max.
1.78
2.54 nom.
12.30 ± 0.30
11.00 max.
9.00 ± 0.15
Pin One I.D.
2.00
14.00
PACKAGE MARKING (Example of VOW137-X017T)
VOW137
V YWW 68
Note
• Tape and reel suffix (T) is not part of the package marking.
Rev. 1.0, 07-Aug-14
Document Number: 84157
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PACKING INFORMATION (Tape and Reel)
Top cover tape
Embossed carrier
Embossment
17998
Fig. 22 - Tape and Reel Shipping Medium
Fig. 23 - Tape and Reel Packing Option 7 (750 parts per reel)
Rev. 1.0, 07-Aug-14
Document Number: 84157
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PACKING INFORMATION (Tubes)
DEVICE PER TUBE
TYPE
DIP-8, widebody
Rev. 1.0, 07-Aug-14
UNITS/TUBE
TUBE/BOX
UNITS/BOX
40
30
1200
Document Number: 84157
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Revision: 01-Jan-2022
1
Document Number: 91000
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