VQ3001P-E3

VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Low On-Resistance: 0.8/1.6 W Low Threshold: 1.5/–3.1 V Low Input Capacitance: 38/60 pF Fast Switching Speed: 9/16 ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage Dual-In-Line N D1 1 14 D4 S1 2 13 S4 G1 3 12 G4 4 11 G2 5 10 G3 S2 6 9 S3 D2 7 8 D3 NC P Device Marking Top View P VQ3001J “S” fllxxyy NC VQ3001P “S” fllxxyy N “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code Top View Plastic: VQ3001J Sidebraze: VQ3001P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Single Parameter Drain-Source Voltage Symbol N-Channel P-Channel VDS 30 30 "20 "20 "20 "20 VQ3001J Gate-Source Voltage Continuous Drain Current (TJ = 150_C) VQ3001P TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation VGS ID IDM TA= 25_C TA= 100_C Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range 0.85 –0.6 0.52 –0.37 3 –2 Total Quad V A 1.3 1.3 2 0.52 0.52 0.8 RthJA 96.2 96.2 TJ, Tstg –55 to 150 PD Unit 62.5 –55 to 150 W _C/W _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70221 S-04279—Rev. D, 16-Jul-01 www.vishay.com 11-1 VQ3001J/P Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Condition N-Channel P-Channel Typa Min Min 30 Max Max Unit Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero-Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 10 mA 55 VGS = 0 V, ID = –10 mA –55 VDS = VGS, ID = 1 mA 1.5 VDS = VGS, ID = –1 mA –3.1 –30 0.8 V 2.5 –2 VDS = 0 V, VGS = "20 V "100 "100 VDS = 0 V, VGS = "20 V, TJ = 125_C "500 "500 VDS = 24 V, VGS = 0 V 10 VDS = –24 V, VGS = 0 V IDSS Drain-Source On-State Resistanceb Forward Transconductanceb ID(on) m mA –500 VDS = 10 V, VGS = 12 V 3 VDS = –10 V, VGS = –12 V –2 2 1.2 1.75 VGS = 12 V, ID = 1 A 0.81 1.0 VGS = –12 V, ID = –1 A 1.6 VGS = 12 V, ID = 1 A, TJ = 125_C 1.65 VGS = –12 V, ID = –1 A, TJ = 125_C 2.7 VDS = 10 V, ID = 0.5 A 500 VDS = –10 V, ID = –0.5 A 390 gfs A –1.5 VGS = 5 V, ID = 0.2 A rDS(on) nA –10 500 VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = –24 V, VGS = 0 V, TJ = 125_C On-State Drain Currentb –4.5 2.0 W 2.0 4.0 250 mS 200 Dynamic 38 Input Capacitance Output Capacitance Ciss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz Coss P-Channel VDS = –15 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance Crss tON 33 150 110 45 8 100 VDD = 15 V, RL = 23 W ID ^ 0.6 A, VGEN = 10 V, RG = 25 W 9 pF 35 15 N-Channel Turn-On Time 110 60 60 30 19 30 ns P-Channel Turn-Off Time tOFF VDD = –15 V, RL = 23 W ID ^ –0.6 A, VGEN = –10 V, RG = 25 W Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. www.vishay.com 11-2 14 16 30 30 VNDQ03/VPEA03 Document Number: 70221 S-04279—Rev. D, 16-Jul-01 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 2.0 N-CHANNEL Output Characteristics for Low Gate Drive 200 7V 10 V 6V 2.9 V VGS = 10 V 160 ID – Drain Current (mA) ID – Drain Current (A) 1.6 5V 1.2 0.8 4V 0.4 2.7 V 120 2.5 V 80 2.3 V 40 3V 2.1 V 1.7 V 2V 0 0 0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2.0 VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 500 VDS = 15 V 3 rDS(on) – On-Resistance ( Ω ) ID – Drain Current (mA) 400 300 200 TJ = 125_C 100 ID = 0.2 A 0.5 A 2 1.0 A 1 25_C –55_C 0 0 0 1 2 3 4 0 5 8 12 16 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) 2.5 rDS(on) – Drain-Source On-Resistance ( Ω ) 4 2.0 VGS = 4.5 V 6V 1.5 1.0 10 V 0.5 0 20 2.25 VGS = 10 V 2.00 1.75 ID = 0.5 A 1.50 0.1 A 1.25 1.00 0.75 0.50 0 0.5 1.0 1.5 2.0 ID – Drain Current (A) Document Number: 70221 S-04279—Rev. D, 16-Jul-01 2.5 3.0 –50 –10 30 70 110 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region N-CHANNEL Capacitance 10 120 VDS = 10 V C – Capacitance (pF) TJ = 150_C ID – Drain Current (mA) VGS = 0 V f = 1 MHz 100 1 100_C 25_C 0.1 80 60 40 Ciss Coss 20 Crss –55_C 0.01 0.6 0 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 10 VGS – Gate-to-Source Voltage (V) Gate Charge 50 VDD = 25 V RG = 25 W VGS = 0 to 10 V 5 t – Switching Time (ns) VGS – Gate-to-Source Voltage (V) 40 Load Condition Effects on Switching ID = 1 A 4 VDS = 15 V 3 24 V 2 10 td(off) td(on) tf tr 1 1 0.1 0 0 80 160 240 320 400 1 Qg – Total Gate Charge (pC) 10 ID – Drain Current (A) Drive Resistance Effects on Switching Transconductance 500 100 TJ = –55_C VDD = 25 V RL = 24 W VGS = 0 to 10 V ID = 1 A 25_C gfs – Forward Transconductance (µS) t – Switching Time (ns) 30 100 6 td(off) 10 td(on) tf tr 400 150_C 300 200 VDS = 7.5 V 300 ms, 1% Duty Cycle Pulse Test 100 0 1 10 50 RG – Gate Resistance (W) www.vishay.com 11-4 20 VDS – Drain-to-Source Voltage (V) 100 0 100 200 300 400 500 ID – Drain Current (mA) Document Number: 70221 S-04279—Rev. D, 16-Jul-01 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics P-CHANNEL Transfer Characteristics –2.0 VGS = –10 V –9 V –1000 –8 V –800 ID – Drain Current (A) –1.2 –7 V –0.8 –6 V –0.4 –5 V ID – Drain Current (mA) 125_C –1.6 TJ = –55_C 25_C –600 –400 –200 –4 V 0 0 0 –1 –2 –3 –4 VDS – Drain-to-Source Voltage (V) –5 0 –2 –4 –6 –8 VGS – Gate-to-Source Voltage (V) Capacitance Gate Charge –18 175 C – Capacitance (pF) VGS – Gate-to-Source Voltage (V) VGS = 0 V f = 1 MHz 150 125 100 75 Ciss Coss 50 25 Crss –15 VDS = –15 V ID = –1 A –12 VDS = –24 V ID = –1 A –9 –6 –3 0 0 0 –5 –10 –15 –20 –25 0 –30 1000 2000 3000 4000 5000 Qg – Total Gate Charge (pC) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage –10 K 1.65 TJ = 150_C 1.50 TJ = 25_C –1 K 1.35 IS – Source Current (mA) rDS(on) – On-Resistance ( Ω ) (Normalized) –10 VGS = –4.5 V ID = –0.5 A 1.20 VGS = –10 V ID = –0.1 A 1.05 –100 –10 0.90 0.75 –50 –1 –25 0 25 50 75 100 TJ – Junction Temperature (_C) Document Number: 70221 S-04279—Rev. D, 16-Jul-01 125 150 0 –1.0 –2.0 –3.0 VSD – Source-to-Drain Voltage (V) –4.0 www.vishay.com 11-5 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region On-Resistance vs. Gate-to-Source Voltage –10 K 3.0 VDS = –10 V ID = –0.5 A 2.5 TJ = 150_C –1 K ID – Drain Current (µA) rDS(on) – On-Resistance ( Ω ) P-CHANNEL 2.0 –0.2 A 1.5 100_C 25_C –100 –10 –55_C 1.0 –1 0 0 –4 –8 –12 –16 VGS – Gate-to-Source Voltage (V) www.vishay.com 11-6 –20 –1.0 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0 VGS – Gate-Source Voltage (V) Document Number: 70221 S-04279—Rev. D, 16-Jul-01 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1