VQ3001J

VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) N-Channel P-Channel 30 –30 rDS(on) Max (W) 1 @ VGS = 12 V 2 @ VGS = –12 V VGS(th) (V) 0.8 to 2.5 –2 to –4.5 ID (A) 0.85 –0.6 FEATURES D D D D D Low On-Resistance: 0.8/1.6 W Low Threshold: 1.5/–3.1 V Low Input Capacitance: 38/60 pF Fast Switching Speed: 9/16 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Dual-In-Line D1 N S1 G1 NC G2 P S2 D2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 D4 S4 G4 NC G3 S3 D3 N “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code P Device Marking Top View VQ3001J “S” fllxxyy VQ3001P “S” fllxxyy Top View Plastic: VQ3001J Sidebraze: VQ3001P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Single Parameter Drain-Source Voltage VQ3001J Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70221 S-04279—Rev. D, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C VQ3001P TA= 25_C TA= 100_C VGS ID IDM PD RthJA TJ, Tstg Symbol VDS N-Channel 30 "20 "20 0.85 0.52 3 1.3 0.52 96.2 –55 to 150 P-Channel 30 "20 "20 –0.6 –0.37 –2 1.3 0.52 96.2 Total Quad Unit V A 2 0.8 62.5 –55 to 150 W _C/W _C 11-1 VQ3001J/P Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits N-Channel Parameter Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage V(BR)DSS VGS = 0 V, ID = 10 mA VGS = 0 V, ID = –10 mA VDS = VGS, ID = 1 mA VGS(th) VDS = VGS, ID = –1 mA VDS = 0 V, VGS = "20 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V, TJ = 125_C VDS = 24 V, VGS = 0 V Zero-Gate Voltage Drain Current VDS = –24 V, VGS = 0 V IDSS VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = –24 V, VGS = 0 V, TJ = 125_C On-State Drain Currentb VDS = 10 V, VGS = 12 V ID(on) VDS = –10 V, VGS = –12 V VGS = 5 V, ID = 0.2 A VGS = 12 V, ID = 1 A Drain-Source On-State Resistanceb rDS(on) VGS = –12 V, ID = –1 A VGS = 12 V, ID = 1 A, TJ = 125_C VGS = –12 V, ID = –1 A, TJ = 125_C Forward Transconductanceb VDS = 10 V, ID = 0.5 A gfs VDS = –10 V, ID = –0.5 A 3 –2 1.2 0.81 1.6 1.65 2.7 500 390 250 200 mS 2.0 4.0 1.75 1.0 2.0 W 2 –1.5 A 500 –500 55 –55 1.5 –3.1 "100 "500 10 –10 mA 0.8 2.5 –2 –4.5 "100 "500 nA 30 –30 V P-Channel Min Max Unit Symbol Test Condition Typa Min Max Dynamic 38 Input Capacitance Ciss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P-Channel VDS = –15 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance Crss N-Channel Turn-On Time tON VDD = 15 V, RL = 23 W ID ^ 0.6 A, VGEN = 10 V, RG = 25 W P-Channel Turn-Off Time tOFF VDD = –15 V, RL = 23 W ID ^ –0.6 A, VGEN = –10 V, RG = 25 W 60 33 45 8 15 9 19 14 16 30 30 30 30 ns 35 60 110 100 pF 110 150 Output Capacitance Coss Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. VNDQ03/VPEA03 www.vishay.com 11-2 Document Number: 70221 S-04279—Rev. D, 16-Jul-01 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 2.0 VGS = 10 V 1.6 ID – Drain Current (mA) ID – Drain Current (A) 160 2.7 V 120 2.5 V 80 2.3 V 40 7V 200 6V 10 V 2.9 V N-CHANNEL Output Characteristics for Low Gate Drive 1.2 5V 0.8 4V 0.4 3V 2V 2.1 V 1.7 V 0 0 1 2 3 4 5 VDS – Drain-to-Source Voltage (V) 0 0 0.4 0.8 1.2 1.6 2.0 VDS – Drain-to-Source Voltage (V) Transfer Characteristics 500 VDS = 15 V rDS(on) – On-Resistance ( Ω ) 400 ID – Drain Current (mA) 3 On-Resistance vs. Gate-to-Source Voltage ID = 0.2 A 300 0.5 A 2 1.0 A 1 200 TJ = 125_C 100 25_C –55_C 0 0 1 2 3 4 5 0 0 4 8 12 16 20 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current 2.5 rDS(on) – Drain-Source On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) 2.25 2.00 1.75 1.50 Normalized On-Resistance vs. Junction Temperature VGS = 10 V 2.0 VGS = 4.5 V 1.5 6V ID = 0.5 A 0.1 A 1.0 1.25 1.00 0.75 0.50 10 V 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 –50 –10 30 70 110 150 ID – Drain Current (A) TJ – Junction Temperature (_C) Document Number: 70221 S-04279—Rev. D, 16-Jul-01 www.vishay.com 11-3 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region 10 VDS = 10 V TJ = 150_C ID – Drain Current (mA) 1 100_C 25_C 0.1 C – Capacitance (pF) 100 VGS = 0 V f = 1 MHz 120 N-CHANNEL Capacitance 80 60 40 Ciss Coss 20 –55_C 0.01 0.6 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 10 20 30 40 50 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Crss Gate Charge 6 ID = 1 A VGS – Gate-to-Source Voltage (V) 5 t – Switching Time (ns) 100 Load Condition Effects on Switching VDD = 25 V RG = 25 W VGS = 0 to 10 V 4 VDS = 15 V 3 24 V 2 10 td(on) tr td(off) tf 1 0 0 80 160 240 320 400 Qg – Total Gate Charge (pC) 1 0.1 1 ID – Drain Current (A) 10 Drive Resistance Effects on Switching 100 VDD = 25 V RL = 24 W VGS = 0 to 10 V ID = 1 A t – Switching Time (ns) 500 Transconductance TJ = –55_C 25_C gfs – Forward Transconductance (µS) 400 150_C 300 10 td(on) tf tr td(off) 200 VDS = 7.5 V 300 ms, 1% Duty Cycle Pulse Test 100 1 10 50 RG – Gate Resistance (W) 100 0 0 100 200 300 400 500 ID – Drain Current (mA) www.vishay.com 11-4 Document Number: 70221 S-04279—Rev. D, 16-Jul-01 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics –2.0 VGS = –10 V –1.6 ID – Drain Current (A) –9 V –1000 125_C –8 V ID – Drain Current (mA) –800 TJ = –55_C 25_C P-CHANNEL Transfer Characteristics –1.2 –7 V –600 –0.8 –6 V –400 –0.4 –5 V –4 V –200 0 0 –1 –2 –3 –4 VDS – Drain-to-Source Voltage (V) Capacitance 175 150 125 100 75 50 25 0 0 –5 –10 –15 –20 –25 –30 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature 1.65 Crss Coss VGS = 0 V f = 1 MHz VGS – Gate-to-Source Voltage (V) –5 0 0 –2 –4 –6 –8 VGS – Gate-to-Source Voltage (V) Gate Charge –18 –10 –15 VDS = –15 V ID = –1 A VDS = –24 V ID = –1 A C – Capacitance (pF) –12 –9 Ciss –6 –3 0 0 1000 2000 3000 4000 5000 Qg – Total Gate Charge (pC) Source-Drain Diode Forward Voltage –10 K TJ = 150_C –1 K IS – Source Current (mA) TJ = 25_C 1.50 rDS(on) – On-Resistance ( Ω ) (Normalized) 1.35 VGS = –4.5 V ID = –0.5 A VGS = –10 V ID = –0.1 A 1.20 –100 1.05 –10 0.90 0.75 –50 –1 –25 0 25 50 75 100 125 150 0 TJ – Junction Temperature (_C) –1.0 –2.0 –3.0 VSD – Source-to-Drain Voltage (V) –4.0 Document Number: 70221 S-04279—Rev. D, 16-Jul-01 www.vishay.com 11-5 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) P-CHANNEL On-Resistance vs. Gate-to-Source Voltage 3.0 ID = –0.5 A rDS(on) – On-Resistance ( Ω ) 2.5 ID – Drain Current (µA) –1 K –10 K Threshold Region VDS = –10 V TJ = 150_C 2.0 –100 100_C 25_C 1.5 –0.2 A –10 1.0 –55_C 0 0 –4 –8 –12 –16 –20 VGS – Gate-to-Source Voltage (V) –1 –1.0 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0 VGS – Gate-Source Voltage (V) www.vishay.com 11-6 Document Number: 70221 S-04279—Rev. D, 16-Jul-01