VS-10ETS08-M3

VS-10ETS...-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 10 A FEATURES Base cathode 2 2 • Very low forward voltage drop • 150 °C max. operating junction temperature • Glass passivated pellet chip junction • Designed and qualified JEDEC®-JESD 47 1 1 Cathode 3 3 Anode according to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2L TO-220AC APPLICATIONS • Input rectification PRIMARY CHARACTERISTICS IF(AV) 10 A VR 800 V to 1200 V VF at IF 1.1 V IFSM 160 A TJ max. 150 °C Package 2L TO-220AC Circuit configuration Single • Vishay Semiconductors switches and output rectifiers which are available in identical package outlines DESCRIPTION High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. These devices are intended for use in main rectification (single or three phase bridge). OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 12.0 16.0 A Capacitive input filter TA = 55 °C, TJ = 125 °C  common heatsink of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 10 A Sinusoidal waveform VRRM 800/1200 V IFSM 160 A VF 10 A, TJ = 25 °C TJ 1.1 V -40 to +150 °C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VS-10ETS08-M3 800 900 VS-10ETS12-M3 1200 1300 0.5 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle  non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t TEST CONDITIONS VALUES TC = 105 °C, 180° conduction half sine wave 10 10 ms sine pulse, rated VRRM applied 135 10 ms sine pulse, no voltage reapplied 160 10 ms sine pulse, rated VRRM applied 91 10 ms sine pulse, no voltage reapplied 130 t = 0.1 ms to 10 ms, no voltage reapplied 1300 UNITS A A2s A2s Revision: 23-Nov-17 Document Number: 96212 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETS...-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS VALUES UNITS 1.1 V 20 m 0.82 V 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C 0.05 VR = Rated VRRM TJ = 150 °C mA 0.50 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg VALUES UNITS -40 to +150 °C Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient  (PCB mount) RthJA 62 TS 240 Soldering temperature DC operation 2.5 Approximate weight Marking device °C/W °C 2 g 0.07 oz. 10ETS08 Case style 2L TO-220AC 10ETS12     150 150 Maximum Allowable Case Temperature (°C) 140 Maximum Allowable Case Temperature (°C) 10ETS.. Series RthJC (DC) = 2.5 °C/W 130 Ø Conduction angle 120 110 100 60° 90 90° 180° 30° 10ETS.. Series RthJC(DC) = 2.5 °C/W 140 130 Ø Conduction period 120 110 DC 100 120° 30° 120° 80 60° 180° 90° 90 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics 18 Revision: 23-Nov-17 Document Number: 96212 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETS...-M3 Series www.vishay.com Vishay Semiconductors 180° 120° 90° 60° 30° 14 12 10 RMS limit 8 6 Ø 4 Conduction angle 2 10ETS.. Series TJ = 150 °C 0 0 2 4 6 8 150 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 16 10 At any rated load condition and with rated Vrrm applied following surge. Initial Tj = 150°C at 60 Hz 0.0083s at 50 Hz 0.0100s 140 130 120 110 100 90 80 70 60 50 30 1 Average Forward Current (A) 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 3 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 180 20 DC 180° 120° 90° 60° 30° 16 14 12 Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied 160 Peak Half Sine Wave Forward Current (A) 18 Maximum Average Forward Power Loss (W) VS-10ETS.. Series 40 10 8 Ø 6 Conduction period 4 10ETS.. Series TJ = 150 °C RMS limit 2 140 120 100 80 60 40 VS-10ETS.. Series 20 0 0 0 2 4 6 8 10 12 14 16 0.01 0.1 1 10 Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) Average Forward Current (A) Pulse Train Duration (s) 100 TJ = 25 °C TJ = 150 °C 10 10ETS.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Revision: 23-Nov-17 Document Number: 96212 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETS...-M3 Series www.vishay.com Vishay Semiconductors ZthJC - Transient Thermal Impedance (°C/W) 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 10ETS.. Series 0.1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 10 E T S 12 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (10 = 10 A) 3 - Circuit configuration: E = single 4 - Package: T = 2L TO-220AC 5 - Type of silicon: S = standard recovery rectifier 6 - 7 - 08 = 800 V 12 = 1200 V Voltage code x 100 = VRRM Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-10ETS08-M3 50 1000 Antistatic plastic tubes VS-10ETS12-M3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96156 Part marking information www.vishay.com/doc?95391 Revision: 23-Nov-17 Document Number: 96212 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220AC DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 (H1) H1 C D2 (6) D 2 D D L1 (2) C (6) c 2xb D1 2 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AC SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96156 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000