VS-10RIA10

VS-10RIA Series www.vishay.com Vishay Semiconductors Medium Power Phase Control Thyristors (Stud Version), 10 A FEATURES • Improved glass passivation for high reliability and exceptional stability at high temperature • High dIF/dt and dV/dt capabilities • Standard package • Low thermal resistance • Metric threads version available TO-48 (TO-208AA) • Types up to 1200 V VDRM/VRRM PRIMARY CHARACTERISTICS • Designed and qualified for industrial and consumer level IT(AV) 10 A VDRM/VRRM 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V, 1200 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VTM 1.75 V TYPICAL APPLICATIONS IGT 60 mA • Medium power switching TJ -65 °C to +125 °C • Phase control applications Package TO-48 (TO-208AA) Circuit configuration Single SCR  MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC IT(RMS) ITSM I2t UNITS 10 A 85 °C 25 A 50 Hz 225 60 Hz 240 50 Hz 255 60 Hz 233 VDRM/VRRM tq VALUES Typical TJ A A2s 100 to 1200 V 110 μs -65 to +125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-10RIA VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE (1) V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE (2) V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 10 100 150 20 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 10 Notes (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs (2) For voltage pulses with t  5 ms p Revision: 21-Sep-17 Document Number: 93689 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10RIA Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current IT(AV) TEST CONDITIONS 180° conduction, half sine wave IT(RMS) t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t I2t for fusing t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t No voltage reapplied UNITS 10 A 85 °C 25 A 225 No voltage reapplied 100 % VRRM reapplied VALUES 240 190 Sinusoidal half wave, initial TJ =TJ maximum 100 % VRRM reapplied t = 0.1 to 10 ms, no voltage reapplied A 200 255 233 180 A2s 165 2550 Low level value of threshold voltage VT(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 1.10 High level value of threshold voltage VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 1.39 Low level value of on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 24.3 High level value of on-state slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 16.7 Ipk = 32 A, TJ = 25 °C, tp = 10 ms sine pulse 1.75 A2s V m Maximum on-state voltage VTM Maximum holding current IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load 130 200 V mA SWITCHING PARAMETER SYMBOL VDRM  600 V Maximum rate of rise VDRM  800 V of turned-on current VDRM  1000 V Typical reverse recovery time Typical turn-off time VALUES UNITS 200 dIF/dt VDRM  1600 V Typical turn-on time TEST CONDITIONS TJ = TJ maximum, VDM = Rated VDRM Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum ITM = (2 x rated dI/dt) A 180 160 A/μs 150 tgt TJ = 25 °C, at rated VDRM/VRRM, TJ = 125 °C trr TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, dIF/dt = - 10 A/μs tq TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, VR = 100 V, dIF/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % VDRM, gate bias 0 V to 100 W 0.9 4 μs 110 Note • tq = 10 μs up to 600 V, tq = 30 μs up to 1600 V available on special request BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage SYMBOL dV/dt TEST CONDITIONS VALUES TJ = TJ maximum linear to 100 % rated VDRM 100 TJ = TJ maximum linear to 67 % rated VDRM 300 (1) UNITS V/μs Note (1) Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 10RIA120S90 Revision: 21-Sep-17 Document Number: 93689 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10RIA Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) TEST CONDITIONS VALUES 8.0 TJ = TJ maximum 2.0 UNITS W Maximum peak positive gate current IGM TJ = TJ maximum 1.5 A Maximum peak negative gate voltage -VGM TJ = TJ maximum 10 V TJ = -65 °C 90 DC gate current required to trigger IGT TJ = 25 °C TJ = -65 °C DC gate voltage required to trigger VGT 60 Maximum required gate trigger current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied TJ = 125 °C TJ = 25 °C 3.0 2.0 TJ = 125 °C DC gate current not to trigger IGD DC gate voltage not to trigger VGD mA 35 V 1.0 TJ = TJ maximum, VDRM = Rated value TJ = TJ maximum, VDRM = Rated value Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 2.0 mA 0.2 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction and storage temperature range TEST CONDITIONS TJ, TStg VALUES UNITS -65 to +125 °C Maximum thermal resistance, junction to case RthJC DC operation 1.85 Maximum thermal resistance, case to heat sink RthCS Mounting surface, smooth, flat and greased 0.35 K/W Lubricated threads (Non-lubricated threads) Mounting torque Approximate weight Case style See dimensions - link at the end of datasheet TO NUT TO DEVICE 20 (27.5) 25 lbf in 0.23 (0.32) 0.29 kgf · m 2.3 (3.1) 2.8 N·m 14 g 0.49 oz. TO-48 (TO-208AA) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.44 0.32 120° 0.53 0.56 90° 0.68 0.75 60° 1.01 1.05 30° 1.71 1.73 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 21-Sep-17 Document Number: 93689 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10RIA Series 130 Vishay Semiconductors 10RIA Series RthJC (DC) = 1.85 K/W 120 110 100 90 Conduction Angle 80 30° 60° 70 90° 120° 60 180° 50 40 0 2 4 6 8 10 12 14 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 10RIA Series RthJC (DC) = 1.85 K/W 120 110 100 90 Conduction Period 80 30° 60° 70 90° 120° 60 180° 50 DC 40 0 16 18 Fig. 1 - Current Ratings Characteristics 10 15 20 25 30 Fig. 2 - Current Ratings Characteristics 35 1 W K/ 3K /W ta el -D 4K /W RMS Limit 5K /W 7K /W 15 Conduction Angle 10 10RIA Series TJ = 125°C 5 R 20 K/ W = 25 2 A 180° 120° 90° 60° 30° 30 S R th Maximum Average On-state Power Loss (W) 5 Average On-state Current (A) Average On-state Current (A) 10 K /W 0 0 2 4 6 8 10 12 14 16 Average On-state Current (A) 0 18 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 45 DC 180° 120° 90° 60° 30° 40 35 30 R SA th Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 25 20 = 1 2K /W 3K /W 4K /W RMS Limit 15 Conduction Period 10 5K /W 7 K/W 10RIA Series TJ = 125°C 10 K/W 5 K/ W -D el ta R 0 0 5 10 15 20 25 Average On-state Current (A) 0 30 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics Revision: 21-Sep-17 Document Number: 93689 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10RIA Series www.vishay.com 240 200 At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 190 180 170 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Vishay Semiconductors 160 150 140 130 120 110 10RIA Series 100 90 1 10 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated V RRMReapplied 220 200 180 160 140 120 100 10RIA Series 80 0.01 100 Fig. 5 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 6 - Maximum Non-Repetitive Surge Current 1000 100 TJ = 25°C TJ = 125°C 10 10RIA Series 1 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V) Transient Thermal Impedance ZthJC (K/W) Fig. 7 - Forward Voltage Drop Characteristics 10 Steady State Value R thJC = 1.85 K/W (DC Operation) 1 10RIA Series 0.1 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 21-Sep-17 Document Number: 93689 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10RIA Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a) Recommended load line for rated di/dt : 10V, 20ohms tr = 6 µs b) Recommended load line for