VS-15TQ060-N3

VS-15TQ060PbF, VS-15TQ060-N3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A FEATURES • 150 °C TJ operation Base cathode 2 • Very low forward voltage drop • High frequency operation TO-220AC 3 Anode 1 Cathode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability Available • Designed and qualified according to JEDEC®-JESD47 PRODUCT SUMMARY • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Package TO-220AC IF(AV) 15 A VR 60 V VF at IF 0.56 V IRM max. 45 mA at 125 °C TJ max. 150 °C Diode variation Single die EAS 6 mJ DESCRIPTION The VS-15TQ060... Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 15 A 60 V Rectangular waveform VRRM IFSM tp = 5 μs sine 1000 A VF 15 Apk, TJ = 125 °C 0.56 V TJ Range -55 to 150 °C VS-15TQ060PbF VS-15TQ060-N3 UNITS 60 60 V VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current  See fig. 5 IF(AV) 50 % duty cycle at TC = 104 °C, rectangular waveform 15 Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.50 A, L = 11.5 mH IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical Repetitive avalanche current 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 1000 UNITS A 260 6 mJ 1.50 A Revision: 22-Apr-14 Document Number: 94142 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15TQ060PbF, VS-15TQ060-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 15 A Maximum forward voltage drop See fig. 1 VFM (1) 30 A IRM (1) UNITS 0.62 TJ = 25 °C 0.82 V 0.56 15 A 30 A Maximum reverse leakage curent See fig. 2 VALUES TJ = 25 °C TJ = 125 °C TJ = 125 °C 0.71 0.80 VR = Rated VR Maximum junction capacitance CT VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance LS Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt Rated VR mA 45 720 pF 8 nH 10 000 V/μs VALUES UNITS -55 to 150 °C Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance,  junction to case RthJC DC operation See fig. 4 3.25 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased 0.50 °C/W 2 g Approximate weight 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf ·in) Mounting torque Marking device Case style TO-220AC (JEDEC) 15TQ060 Revision: 22-Apr-14 Document Number: 94142 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15TQ060PbF, VS-15TQ060-N3 www.vishay.com Vishay Semiconductors 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 1000 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 TJ = 150 °C 100 TJ = 125 °C 10 TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0 0.4 0.8 1.2 1.6 0 2.0 10 VFM - Forward Voltage Drop (V) 30 20 50 40 60 VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 10 20 30 40 50 60 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 PDM t1 t2 0.01 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 . 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 22-Apr-14 Document Number: 94142 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15TQ060PbF, VS-15TQ060-N3 Vishay Semiconductors 150 14 140 12 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com DC 130 120 110 Square wave (D = 0.50) 80 % rated VR applied 90 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 10 8 RMS limit 6 4 DC 2 See note (1) 0 80 0 5 10 15 20 0 25 2 4 6 8 10 12 14 16 18 20 22 Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (μs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 22-Apr-14 Document Number: 94142 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15TQ060PbF, VS-15TQ060-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 15 T Q 060 PbF 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (15 = 15 A) 3 - Package: T = TO-220 4 - Schottky “Q” series 5 - Voltage rating (060 = 60 V) 6 - Environmental digit PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-15TQ060PbF 50 1000 Antistatic plastic tube VS-15TQ060-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95221 TO-220ACPbF www.vishay.com/doc?95224 Part marking information TO-220AC-N3 SPICE model www.vishay.com/doc?95068 www.vishay.com/doc?95600 Revision: 22-Apr-14 Document Number: 94142 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A ØP 0.014 M B A M E2 (7) Q 3 D D L1 E A1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B θ D1 1 2 A (6) H1 (7) (6) D 1 2 3 Lead tip L3 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode L4 L c e1 A Conforms to JEDEC outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 A2 2.56 2.92 0.101 0.115 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 MILLIMETERS INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 E2 - 0.76 - 0.030 7 e 2.41 2.67 0.095 0.105 e1 4.88 5.28 0.192 0.208 4 H1 6.09 6.48 0.240 0.255 L 13.52 14.02 0.532 0.552 4 L1 3.32 3.82 0.131 0.150 c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 D 14.85 15.25 0.585 0.600 3 ØP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN. T 90° to 93° 6, 7 2 2 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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